Preparation method of stannic oxide micro-nano materials based on APCVD (atmospheric pressure chemical vapor deposition) method

A technology of atmospheric pressure chemical vapor phase and tin dioxide, applied in the direction of tin oxide, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problems of high cost and difficult material growth, and achieve low cost and high quality equipment simple effect

Inactive Publication Date: 2013-03-06
SICHUAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcomings and deficiencies of the traditional chemical vapor deposition method, which are high in cost and diffic

Method used

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  • Preparation method of stannic oxide micro-nano materials based on APCVD (atmospheric pressure chemical vapor deposition) method
  • Preparation method of stannic oxide micro-nano materials based on APCVD (atmospheric pressure chemical vapor deposition) method
  • Preparation method of stannic oxide micro-nano materials based on APCVD (atmospheric pressure chemical vapor deposition) method

Examples

Experimental program
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Effect test

Embodiment 1

[0037] In the first step, mix 1 mg of dry graphene oxide with a small amount of ethanol, grind it into a paste, and evenly coat it on the resistance ring, and put the resistance ring coated with graphene oxide into the muffle furnace for 300 o Calcined at C for 1 hour, after treatment, a uniform coating was formed on the resistance ring as a base for depositing tin dioxide material.

[0038] In the second step, put the resistance coil coated with the substrate into the quartz reaction chamber, first pass through the argon protective gas at a flow rate of 100mL / min for 15 minutes, and then mix the 0.19mg / mL stannous chloride solution with potassium borohydride The solution was mixed at a flow rate of 1.5mL / min to generate tin hydrogen online, and was brought into the reaction chamber by argon. Turn on electricity to heat the resistor coil to 580 o C. After the precursor is deposited on the substrate for 60 minutes, stop generating tin hydrogen and turn off the power supply, an...

Embodiment 2

[0040] By the preparation method of embodiment 1, just change deposition temperature into 540 o C, the prepared tin dioxide material is a square nanorod structure with a width of about 400 nanometers and a length of about 1.5 microns. The SEM photo of the product is as follows figure 2 -b, shown in 2-c, the XRD pattern of the product is as follows image 3 -b shown.

Embodiment 3

[0042] By the preparation method of embodiment 1, just change the temperature of deposition into 500 o C, the structure of the tin dioxide material prepared, the size are similar to the material prepared by Example 2, and the SEM photo of the product is as follows figure 2 As shown in -a, the XRD pattern of the product is as follows image 3 -a shown.

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Abstract

The invention provideds a controllable preparation method of stannic oxide micro-nano materials of different shapes based on an APCVD (atmospheric pressure chemical vapor deposition) method. The controllable preparation method comprises the following steps of mixing a carbonaceous material and a solvent, grinding the mixture to be pasty, uniformly coating the pasty mixture on a resistance ring, and calcining the resistance ring with the pasty mixture to be served as a substrate of a deposition material; putting the resistance ring in a reaction chamber, firstly filling protective gas, secondly mixing a stannous chloride solution and a potassium borohydride solution to generate hydrogen stannide, charging carrier gas in the reaction chamber with the hydrogen stannide, heating the reaction chamber to a preset temperature and depositing for a while to stop the reaction; and continuously filling the protective gas till the resistance ring is cooled down, putting the cold resistance ring in a muffle furnace to calcine to obtain white stannic oxide materials on the substrate. According to the controllable preparation method of stannic oxide micro-nano materials of different shapes based on the APCVD method, disclosed by the invention, the controllable synthesis of the stannic oxide material is realized by changing the temperature, the time and the substrate of deposition; the utilized instruments are simple, the deposition is carried out under normal pressure so that the cost is low, and no catalyst is added so that the operation is easy; and therefore, the controllable preparation method hopefully becomes a common method for preparing multifunctional materials with high degree of crystallinity and special shapes.

Description

technical field [0001] The invention relates to a method for controllable preparation of tin dioxide micro-nano materials with different shapes by a normal-pressure chemical vapor deposition method. [0002] Background technique [0003] Tin dioxide is a wide bandgap (Eg = 3.6 eV, 300K) semiconductor material. Due to its special physical and chemical properties, it is widely used in the fields of transparent conductors, solar cells, lithium-ion batteries, and gas sensors. The properties of materials are not fixed. When the composition, structure, size and shape of materials change, their properties will also change. Especially when the scale of the material reaches the nanometer level, the material has some special properties due to the size effect, surface effect, macroscopic quantum tunneling effect and dielectric confinement effect. In order to prepare tin dioxide materials with excellent properties and special uses, researchers are committed to synthesizing tin dioxid...

Claims

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Application Information

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IPC IPC(8): C01G19/02B82Y30/00
Inventor 吕弋余凌竹张立春刘滔郝丽英
Owner SICHUAN UNIV
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