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Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof

A field effect transistor, lateral double diffusion technology, applied in semiconductor/solid state device manufacturing, electric solid state device, semiconductor device and other directions, can solve the problem of complex process, reduce the electric field strength, reduce the metal deposition process, suppress the heat carrier injection) effect

Active Publication Date: 2015-06-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the two-layer Faraday shield structure of the traditional RFLDMOS device corresponds to two metal depositions, and the process is complicated

Method used

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  • Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof
  • Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof
  • Field effect transistor of radio frequency lateral double-diffusion and preparation method thereof

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Experimental program
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Embodiment Construction

[0052] In order to enable your examiners to have a further understanding and understanding of the purpose, features and effects of the present invention, the following detailed description is as follows with the accompanying drawings.

[0053] Such as figure 2 Shown is the structure of the RFLDMOS device of the present invention, including growing P-type epitaxial layers 22 with different thicknesses and doping concentrations on the P-type substrate 21; subsequently growing a gate oxide layer 24 by thermal oxygen; depositing Polysilicon, the photolithography plate defines and etches the polysilicon gate 25; performs ion implantation to form a lightly doped drift region (NLDD) 23; uses ion implantation and diffusion processes to form a P well 26, a P+ region 27, an N+ source region 28 and an N+ drain Region 29; a layer of silicon oxide layer 210 is integrally deposited above the P-type epitaxial layer 22, a silicon nitride layer 211 is disposed on the silicon oxide layer 210, ...

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Abstract

The invention discloses a field effect transistor of a radio frequency lateral double-diffusion which comprises a P-type substrate. A P-type epitaxial layer is formed on the P-type substrate in an epitaxial growth mode, and a veneer of monox layer is deposited on the upper portion of the P-type epitaxial layer. A veneer of metal layer is deposited on the monox layer and formed a faraday layer in an etching form. A veneer of silicon nitride layer is arranged between the monox layer and the faraday layer. The field effect transistor of the radio frequency lateral double-diffusion has the advantages of reducing one metal deposition process, meanwhile achieving higher breakdown voltage (BV), reducing the electric field intensity of the lower portion of gate-oxide edge, and helping to restrain domino effect of (HCI) hot carrier injection.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing device, in particular to a radio frequency lateral double-diffusion field effect transistor, and also relates to a manufacturing method of the transistor. Background technique [0002] Radio Frequency Lateral Double Diffusion Field Effect Transistor (RFLDMOS) device is a new generation of integrated solid microwave power semiconductor product formed by the fusion of semiconductor integrated circuit technology and microwave electronic technology. It has good linearity, high gain, high withstand voltage and high output power. , good thermal stability, high efficiency, good broadband matching performance, easy to integrate with MOS process, etc., and its price is much lower than that of gallium arsenide devices. It is a very competitive power device and is widely used in GSM. PCS, power amplifier of W-CDMA base station, wireless broadcasting and nuclear magnetic resonance etc. [0...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L23/60
CPCH01L29/7835H01L29/1045H01L29/402H01L29/404
Inventor 李娟娟慈朋亮钱文生韩峰胡君
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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