Method for preparing monocrystal Bi2Se3 nano structure

A nanostructure, single crystal technology, applied in the direction of single crystal growth, nanotechnology, single crystal growth, etc., can solve the problems that are not conducive to the research of spintronics and quantum computer devices, affect the purity of materials, change and other problems, and achieve the production cost. Inexpensive, reproducible results

Inactive Publication Date: 2013-04-17
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since Bi 2 Se 3 It is a layered structure, and other impurities are allowed to enter between layers. The use of foreign impurities such as gold nanoparticles affects the purity of the material and may change the Bi 2 Se 3 Intrinsic properties of materials
For example, by doping Ca, one can tune the Bi 2 Se 3 The position of the Fermi surface of the bulk single crystal can make it continuously change from n-type semiconductor to p-type semiconductor

Method used

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  • Method for preparing monocrystal Bi2Se3 nano structure
  • Method for preparing monocrystal Bi2Se3 nano structure
  • Method for preparing monocrystal Bi2Se3 nano structure

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0031] Example 1

[0032] In the first step, Bi powder (purity 99.99% (weight ratio), Alfa Aesa) and Se powder (purity 99.99% (weight ratio), Alfa Aesa) with a molar ratio of 2:3 are mixed uniformly, and placed in the quartz boat (up to Antop Technology) as a source of growth;

[0033] In the second step, place the quartz boat in the middle of the horizontal tube growth furnace (Tianjin Zhonghuan Experimental Electric Furnace Co., Ltd., model SK2-4-13), and place it in the horizontal tube growth furnace at a distance of 5-15 cm from the quartz boat and away from the inlet. Place a single crystal silicon wafer as a substrate at one end of the air port to collect the products;

[0034] The third step is to seal the horizontal tube growth furnace and evacuate so that the pressure of the horizontal tube growth furnace reaches 1Pa;

[0035] In the fourth step, argon (purity 99.99% (weight ratio)) is introduced into the horizontal tube growth furnace at a flow rate of 50 sccm, so that the...

Example Embodiment

[0038] Example 2

[0039] In the first step, Bi powder (purity 99.99% (weight ratio), Alfa Aesa) and Se powder (purity 99.99% (weight ratio), Alfa Aesa) with a molar ratio of 2:20 are mixed uniformly, and placed on the quartz boat as Growth source

[0040] In the second step, place the quartz boat in the middle of the horizontal tube growth furnace, and place an alumina ceramic sheet as a substrate at the end of the horizontal tube growth furnace 5-15 cm away from the quartz boat and away from the air inlet to collect the generated Thing

[0041] The third step is to seal the horizontal tube growth furnace and evacuate so that the pressure of the horizontal tube growth furnace reaches 1Pa;

[0042] The fourth step is to pour argon gas into the horizontal tube growth furnace at a flow rate of 100 sccm to make the pressure of the horizontal tube growth furnace reach 800 Pa;

[0043] The fifth step is to heat the horizontal tube growth furnace to 500°C and keep the temperature for 10 ho...

Example Embodiment

[0045] Example 3

[0046] The first step is to change Bi 2 Se 3 Powder (purity 99.999% (weight ratio), Sichuan Xinlong Tellurium Technology Co., Ltd.) is placed on the quartz boat as the growth source;

[0047] In the second step, place the quartz boat in the middle of the horizontal tube growth furnace, and place an alumina ceramic sheet at the end of the horizontal tube growth furnace 5-15 cm away from the quartz boat and away from the air inlet and use the thermal oxidation method. Growth of SiO on monocrystalline silicon wafer 2 The resulting silicon wafer is used as a substrate to collect the products;

[0048] The third step is to seal the horizontal tube growth furnace and evacuate so that the pressure of the horizontal tube growth furnace reaches the lowest value that the vacuum equipment can provide;

[0049] In the fourth step, nitrogen gas (purity 99.99% (weight ratio)) is introduced into the horizontal tubular growth furnace at a flow rate of 50 sccm, so that the pressur...

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Abstract

The invention provides a method for preparing a monocrystal Bi2Se3 nano structure. The Bi2Se3 nano structure comprises a nano belt and a nano sheet, wherein the width of the Bi2Se3 nano belt is 50nm to 4Mum, the length of the Bi2Se3 nano belt is 1-200Mum, and diameter of the Bi2Se3 nano sheet is 50nm to 20Mum. According to the method provided by the invention, high temperature thermal evaporation and gas phase transmission methods are adopted, Bi powder and Se powder or Bi2Se3 powder are taken as raw materials, thermal evaporation is carried out in a high temperature diffusion furnace, and the Bi2Se3 nano structure is obtained on a substrate. The Bi2Se3 nano structure obtained by the invention is a high-quality monocrystal material, no catalyst is used in a synthetic process, influence of introduced foreign impurity to material property is avoided, the method provided by the invention is simple and practicable, repeatability is good, raw materials and the substrate are available, and preparation cost is low.

Description

technical field [0001] The invention relates to a method for preparing single crystal Bi 2 Se 3 The method of nanostructure belongs to the field of semiconductor electronic materials and devices. Background technique [0002] Bi 2 Se 3 It is a narrow-band semiconductor with a band gap of about 0.3eV. It is a traditional thermoelectric material and is also used in infrared detectors and other fields. Recent theoretical and experimental research work has confirmed that the Bi 2 Se 3 As a topological insulator, it has very broad application prospects in the fields of spintronics and quantum computers, so it has attracted extensive attention from the world of condensed matter physics. In order to realize Bi 2 Se 3 The above applications of topological insulators require high-quality Bi 2 Se 3 Material. Currently, Bi 2 Se 3 Common material forms include bulk single crystals, thin films, and nanostructured materials. The concrete method of film synthesis comprises by...

Claims

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Application Information

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IPC IPC(8): C30B1/10C30B29/46B82Y40/00B82Y30/00
Inventor 唐皓颖江鹏王中林
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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