Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing monocrystal Bi2Se3 nano structure

A nanostructure, single crystal technology, applied in the direction of single crystal growth, nanotechnology, single crystal growth, etc., can solve the problems that are not conducive to the research of spintronics and quantum computer devices, affect the purity of materials, change and other problems, and achieve the production cost. Inexpensive, reproducible results

Inactive Publication Date: 2013-04-17
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
View PDF0 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since Bi 2 Se 3 It is a layered structure, and other impurities are allowed to enter between layers. The use of foreign impurities such as gold nanoparticles affects the purity of the material and may change the Bi 2 Se 3 Intrinsic properties of materials
For example, by doping Ca, one can tune the Bi 2 Se 3 The position of the Fermi surface of the bulk single crystal can make it continuously change from n-type semiconductor to p-type semiconductor material (Phys. Rev. Lett., 103, 246601 (2009)), but in the case of repeated temperature changes, Ca-doped Bi 2 Se 3 The composition of bulk single crystals will undergo unpredictable changes, which is not conducive to the future realization of Bi-based 2 Se 3 Spintronics and quantum computer device research; In addition, by doping Cu, a superconductor with a superconducting transition temperature of 3.8K can be obtained (Phys.Rev.Lett., 104, 057001(2010))

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing monocrystal Bi2Se3 nano structure
  • Method for preparing monocrystal Bi2Se3 nano structure
  • Method for preparing monocrystal Bi2Se3 nano structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The first step, the Bi powder (purity 99.99% (weight ratio), Alfa Aesa) and Se powder (purity 99.99% (weight ratio), Alfa Aesa) that the mol ratio is 2: 3 mix homogeneously, put into quartz boat (up to Antu Technology) as a growth source;

[0033] In the second step, place the quartz boat in the middle of the horizontal tubular growth furnace (Tianjin Zhonghuan Experimental Electric Furnace Co., Ltd., model SK2-4-13), and place it at a distance of 5-15 cm from the quartz boat in the horizontal tubular growth furnace and away from the progressing furnace. A single crystal silicon wafer is placed at one end of the gas port as a substrate to collect the product;

[0034] The third step is to seal the horizontal tubular growth furnace and evacuate it so that the pressure of the horizontal tubular growth furnace reaches 1Pa;

[0035] The fourth step is to feed argon gas (purity 99.99% (weight ratio)) into the horizontal tube growth furnace at a flow rate of 50 sccm, so that...

Embodiment 2

[0039] The first step, the Bi powder (purity 99.99% (weight ratio), Alfa Aesa) and Se powder (purity 99.99% (weight ratio), Alfa Aesa) that the mol ratio is 2: 20 mix homogeneously, put on the quartz boat as source of growth;

[0040] In the second step, the quartz boat is placed in the middle of the horizontal tube growth furnace, and an alumina ceramic sheet is placed as a substrate at the end of the horizontal tube growth furnace 5-15 cm away from the quartz boat and away from the air inlet to collect the generated thing;

[0041] The third step is to seal the horizontal tubular growth furnace and evacuate it so that the pressure of the horizontal tubular growth furnace reaches 1Pa;

[0042] The fourth step is to feed argon gas into the horizontal tube growth furnace at a flow rate of 100 sccm so that the pressure of the horizontal tube growth furnace reaches 800 Pa;

[0043] The fifth step is to heat the horizontal tube growth furnace to 500°C and maintain the temperatur...

Embodiment 3

[0046] In the first step, Bi 2 Se 3 Powder (purity 99.999% (weight ratio), Sichuan Xinlong Tellurium Technology Co., Ltd.) is put on the quartz boat as a growth source;

[0047] In the second step, the quartz boat is placed in the middle of the horizontal tube growth furnace, and the alumina ceramic sheet is placed at the end of the horizontal tube growth furnace at a distance of 5 to 15 cm from the quartz boat and away from the air inlet. Growth of SiO on monocrystalline silicon wafers 2 The resulting silicon wafer is used as a substrate to collect the product;

[0048] The third step is to seal the horizontal tube growth furnace and evacuate it so that the pressure of the horizontal tube growth furnace reaches the lowest value that the vacuum equipment can provide;

[0049] The fourth step is to feed nitrogen gas (purity 99.99% (weight ratio)) into the horizontal tubular growth furnace at a flow rate of 50 sccm, so that the pressure of the horizontal tubular growth furnac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for preparing a monocrystal Bi2Se3 nano structure. The Bi2Se3 nano structure comprises a nano belt and a nano sheet, wherein the width of the Bi2Se3 nano belt is 50nm to 4Mum, the length of the Bi2Se3 nano belt is 1-200Mum, and diameter of the Bi2Se3 nano sheet is 50nm to 20Mum. According to the method provided by the invention, high temperature thermal evaporation and gas phase transmission methods are adopted, Bi powder and Se powder or Bi2Se3 powder are taken as raw materials, thermal evaporation is carried out in a high temperature diffusion furnace, and the Bi2Se3 nano structure is obtained on a substrate. The Bi2Se3 nano structure obtained by the invention is a high-quality monocrystal material, no catalyst is used in a synthetic process, influence of introduced foreign impurity to material property is avoided, the method provided by the invention is simple and practicable, repeatability is good, raw materials and the substrate are available, and preparation cost is low.

Description

technical field [0001] The invention relates to a method for preparing single crystal Bi 2 Se 3 The method of nanostructure belongs to the field of semiconductor electronic materials and devices. Background technique [0002] Bi 2 Se 3 It is a narrow-band semiconductor with a band gap of about 0.3eV. It is a traditional thermoelectric material and is also used in infrared detectors and other fields. Recent theoretical and experimental research work has confirmed that the Bi 2 Se 3 As a topological insulator, it has very broad application prospects in the fields of spintronics and quantum computers, so it has attracted extensive attention from the world of condensed matter physics. In order to realize Bi 2 Se 3 The above applications of topological insulators require high-quality Bi 2 Se 3 Material. Currently, Bi 2 Se 3 Common material forms include bulk single crystals, thin films, and nanostructured materials. The concrete method of film synthesis comprises by...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B1/10C30B29/46B82Y40/00B82Y30/00
Inventor 唐皓颖江鹏王中林
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com