Azobenzene polymer surface undulation grating photoetching machine based on guided mode interference

Abstract

The invention discloses an azobenzene polymer surface undulation grating photoetching machine based on guided mode interference. The azobenzene polymer surface undulation grating photoetching machine comprises a laser light source, a photoelectric shutter, a lens, a half wave plate, a polarizer, a beam splitter, a plane reflector, a prism, matched oil, a glass substrate, a metal film, an azobenzene polymer film and an optical waveguide parameter measuring instrument. Light emitted from the laser light source is subjected to beam expansion, passes through the half wave plate and the polarizer to form needed polarized light and is split into two beams with same intensity after passing through the beam splitter; after being reflected by the plane mirror, the two beams of light irradiate the metal film with a same guided mode excitation angle and further excite guided modes in a multi-layer structure; and interference between the guided modes of the two beams of light causes mass transfer of an azobenzene polymer, so that a sub-wavelength surface undulation grating is etched. The photoetching machine based on a guided mode interference field and the azobenzene polymer film realizes etching of the large-area sub-wavelength surface undulation grating, and is short in photoetching time, simple in technology and free from developing and fixing; and the etched grating is erasable and reconfigurable.

Description

technical field [0001] The invention relates to the technical field of lithography machines in the field of micro-nano processing such as microelectronics and optoelectronic device preparation, and in particular to a photolithography machine for azobenzene polymer surface relief gratings based on guided mode interference. Background technique [0002] Photolithography is a sophisticated micro-nano processing technology. The existing maskless surface plasmon subwavelength lithography technology mainly has the disadvantages of shallow writing grating depth, excitation light polarization is limited to TM polarization and so on. This lithography method has limitations in practical applications. Its main problems are: [0003] 1. The depth of the grating is shallow. Since the penetration depth of the surface plasmon wave is very small, it is difficult to write a deep sub-wavelength grating, which affects the application of the grating. [0004] 2. The excitation light has a si...

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Problems solved by technology

[0003] 1. The depth of the grating is shallow. Since the penetration depth of the surface plasmon wave is very small, it is difficult to write a deep sub-wavelength grating, which affects the application of the grating

[0004] 2. The excitation light has a single polarization mode. In maskless surface plasmon subwavelength lithography, only TM polarized light can excite surface plasmon waves, while TE polarized light cannot excite surface plasmon waves.

[0005] 3. The photolithography process is complicated: the maskless surface plasma lithography technology of traditional photoresist is used. After exposure, chemical treatment processes such as developing and fixing are required in the darkroom. The process is complicated and time-consuming. If one of the links goes wrong , you need to start over

[0006] 4. The cost is high. Based on surface plasmon lithography technology, the light source is mostly ultraviolet light. The price of ultraviolet light source is obviously higher than that of visible light band light source.

[0007] 5. The exposure time is long. When the azobenzene polymer film is used as the lithography medium, although the process can be simplified, but because the light field is mainly distributed at the interface between the metal and the azobenzene polymer, the required exposure time is longer

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