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Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

A technology of solar cells and sodium bismuth titanate, which is applied in the manufacture of circuits, electrical components, and final products, to achieve the effects of good repeatability, wide sources, and reduced production costs

Inactive Publication Date: 2015-05-06
SHANGHAI JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] So far, there is no method for preparing BFO / NBT-BT heterostructure ferroelectric thin films and their photovoltaic cells on conductive glass substrates

Method used

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  • Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film
  • Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film
  • Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

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Experimental program
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Effect test

Embodiment 1

[0035] (1) Preparation of BFO precursor solution and NBT-BT precursor solution

[0036] BFO precursor solution preparation: Bi(NO 3 ) 3 ·5H 2 O and Fe (NO3 ) 3 ·9H 2 O is completely dissolved in ethylene glycol methyl ether in a molar ratio of 1:1 to obtain a reddish-brown clear and stable BFO precursor solution;

[0037] Preparation of NBT-BT precursor solution: using ethylene glycol methyl ether as solvent, using Ti[OCH(CH) as solvent 3 ) 2 ] 4 , Bi(NO 3 ) 3 ·5H 2 O, Ba (CH 3 COO) 2 and NaNO 3 As the solute, the NBT-BT precursor solution was prepared in atomic proportion; 3 ) 2 ] 4 Mix it evenly with acetylacetone before; after the above solutes are dissolved, add ethanolamine with 1 / 20 of the prepared solution volume and acetic acid with 1 / 4 of the volume at 70 °C to obtain a stable NBT-BT precursor solution;

[0038] (2) Preparation of BFO / NBT-BT heterostructure ferroelectric thin films

[0039] The thin films were then fabricated on the FTO substrate by a...

Embodiment 2

[0043] Prepare the required NBT-BT and BFO precursor solutions according to the aforementioned precursor solution preparation method. The thin films were then fabricated on the FTO substrate by a glue-spin method. The conditions of the slinging were as follows: 10 seconds at 1000 rpm and 30 seconds at 3000 rpm. After spinning, the substrate with the precursor wet film was first dried at 200 °C for 3 minutes on a hot plate, then calcined at 350 °C for 5 minutes, and finally in O 2 Sintering was carried out in a rapid annealing furnace for 5 minutes under the atmosphere, wherein the annealing temperature of NBT-BT was 600 °C, and the annealing temperature of BFO was 550 °C. First, 2 layers of NBT-BT films were deposited on the FTO substrate, and then 8 layers of BFO films were deposited on the NBT-BT films to obtain 2NBT-BT / 8BFO heterostructure ferroelectric films.

[0044] A 0.5mm*1mm Au upper electrode was deposited on the film surface by a physical sputtering method under t...

Embodiment 3

[0046] Prepare the required NBT-BT and BFO precursor solutions according to the aforementioned precursor solution preparation method. The thin films were then fabricated on the FTO substrate by a glue-spin method. The conditions of the slinging were as follows: 10 seconds at 1000 rpm and 30 seconds at 3000 rpm. After spinning, the substrate with the precursor wet film was first dried at 200 °C for 3 minutes on a hot plate, then calcined at 350 °C for 5 minutes, and finally in O 2 Sintering was carried out in a rapid annealing furnace for 5 minutes under the atmosphere, wherein the annealing temperature of NBT-BT was 600 °C, and the annealing temperature of BFO was 550 °C. First, three layers of NBT-BT films were deposited on the FTO substrate, and then seven layers of BFO films were deposited on the NBT-BT films to obtain 3NBT-BT / 7BFO heterostructure ferroelectric films.

[0047] A 0.5mm*1mm Au upper electrode was deposited on the film surface by a physical sputtering method...

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Abstract

The invention relates to a preparation method of a solar battery with a bismuth ferrite / sodium bismuth titanate-barium titanate heterostructure ferroelectric film. The preparation method comprises the following steps of: selecting SnO2 transparent conducting glass doped with fluorine (FTO for short) as a substrate, preparing the (Na0.5Bi0.5)0.94Ba0.06TiO3 and BiFeO3 ferroelectric film by a chemical solution deposition method, then preparing an electrode on the surface of the film by a physical sputtering method. Compared with the prior art, the preparation method has the advantages that the ferroelectric photoelectric film with high consistency and good repeatability is prepared on the FTO substrate by low cost. The prepared heterostructure film has more excellent photovoltaic performance than that of the pure BiFeO3, and can be applied in the fields of photoelectric batteries and photoelectronic devices.

Description

technical field [0001] The invention belongs to the technical field of film deposition and photovoltaic cell preparation, in particular to a method for preparing BiFeO on a fluorine-doped SnO2 transparent conductive glass (FTO) substrate 3 / (Na 0.5 Bi 0.5 ) 0.94 Ba 0.06 TiO 3 Methods for (BFO / NBT-BT) Heterostructure Ferroelectric Thin Film Photovoltaic Cells. Background technique [0002] Photovoltaic power generation is an effective way to utilize solar energy and an important part of renewable energy utilization. At present, the proportion of photovoltaic power generation in the entire energy structure is still very small (less than 1%), and the main reason is that the cost is too high. According to statistics, 65% of the cost of traditional crystalline silicon battery modules comes from silicon wafers, which consumes a lot of silicon resources and the supply of raw materials is tight, making it difficult to meet the needs of large-scale promotion and application in ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/20
CPCY02P70/50
Inventor 郭益平郭兵刘河洲李华陶文燕康红梅
Owner SHANGHAI JIAOTONG UNIV
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