Impedance type nickel film heatmeter based on laser etching method and manufacturing method thereof

A technology of laser etching method and manufacturing method, which is applied in the field of X-ray detection, can solve problems such as complicated manufacturing process, easily distorted patterns, chemical hazards, etc., and achieve the advantages of overcoming complicated manufacturing process, improving component performance and manufacturing process, and being easy to manufacture Effect

Inactive Publication Date: 2013-05-08
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a resistive nickel thin film calorimeter based on laser etching method in order to overcome the disadvantages of complicated manufacturing process, potential chemical hazards in the preparation process, and easy distortion of patterns in the existing thin film calorimeter preparation technology. Calculation and its production method

Method used

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  • Impedance type nickel film heatmeter based on laser etching method and manufacturing method thereof
  • Impedance type nickel film heatmeter based on laser etching method and manufacturing method thereof
  • Impedance type nickel film heatmeter based on laser etching method and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0038] First, clean the base quartz glass, including the following steps: ultrasonic cleaning with organic cleaning solution for 8-12 minutes, ultrasonic cleaning with deionized water for 3-8 minutes, ultrasonic cleaning with MOS grade ethanol for 8-12 minutes, and ultrasonic cleaning with deionized water for 8-12 minutes. 12 minutes, blow dry with dry pure nitrogen. The organic cleaning solution is detergent, and the resistivity of deionized water is ≤18MΩ. The root mean square roughness of the substrate surface is greater than 0nm and less than 0.5nm.

[0039] Then nickel single-layer film is plated on the substrate quartz glass, adopting the DC magnetron sputtering method, comprising the following steps: before plating nickel single-layer film, the background vacuum degree of the sputtering chamber is lower than 2×10 -4 Pascal; the distance from the target to the substrate is 8 cm; the working mode of the sputtering target gun is constant power sputtering, and the sputteri...

Embodiment 2

[0045] First, the quartz glass of the substrate 1 is cleaned, including the following steps: ultrasonic cleaning with organic cleaning solution for 8-12 minutes, ultrasonic cleaning with deionized water for 3-8 minutes, ultrasonic cleaning with MOS grade ethanol for 8-12 minutes, and ultrasonic cleaning with deionized water for 8 minutes. -12 minutes, blow dry with dry pure nitrogen. The organic cleaning solution is detergent, and the resistivity of deionized water is ≤18MΩ. The root mean square roughness of the substrate surface is greater than 0nm and less than 0.5nm.

[0046] Then nickel single-layer film is plated on the substrate quartz glass, adopting the DC magnetron sputtering method, comprising the following steps: before plating nickel single-layer film, the background vacuum degree of the sputtering chamber is lower than 2×10 -4 Pascal; the distance from the target to the substrate is 8 cm; the working mode of the sputtering target gun is constant power sputtering,...

Embodiment 3

[0051] First, the quartz glass of the substrate 1 is cleaned, including the following steps: ultrasonic cleaning with organic cleaning solution for 8-12 minutes, ultrasonic cleaning with deionized water for 3-8 minutes, ultrasonic cleaning with MOS grade ethanol for 8-12 minutes, and ultrasonic cleaning with deionized water for 8 minutes. -12 minutes, blow dry with dry pure nitrogen. The organic cleaning solution is detergent, and the resistivity of deionized water is ≤18MΩ. The root mean square roughness of the substrate surface is greater than 0nm and less than 0.5nm.

[0052] Then nickel single-layer film is plated on the substrate quartz glass, adopting the DC magnetron sputtering method, comprising the following steps: before plating nickel single-layer film, the background vacuum degree of the sputtering chamber is lower than 2×10 -4 Pascal; the distance from the target to the substrate is 8 cm; the working mode of the sputtering target gun is constant power sputtering,...

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Abstract

The invention relates to an impedance type nickel film heatmeter based on a laser etching method and a manufacturing method thereof. The film heatmeter comprises a base seat and a nickel single-layer film plated on the base seat. The base seat is cleaned firstly. Then the nickel single-layer film is plated on the base seat with a direct current magnetron sputtering method. Finally, patterns are etched on the nickel single-layer film with the laser etching method. Compared with the prior art, the impedance type nickel film heatmeter based on the laser etching method and the manufacturing method thereof overcome the defects that the manufacturing processes of a traditional film heatmeter are complex, equipment is expensive, potential chemical hazards can exist in a manufacturing process, the patterns can be distorted easily, and the like. Performance of elements and manufacturing technology is greatly improved. The impedance type nickel film heatmeter based on the laser etching method has the advantages that the price is low, manufacturing is easy, performance can meets the requirements of practical application, and the like. Industrialization of similar type products can be achieved easily.

Description

technical field [0001] The invention belongs to the technical field of X-ray detection, and in particular relates to a resistive nickel thin-film calorimeter based on a laser etching method and a manufacturing method thereof. Background technique [0002] X-ray detectors are very useful tools in measuring the energy of X-rays and plasmas produced by lasers. X-ray detectors such as calorimetry, see-through diodes, and silicon-based detectors have been used to determine the total X-ray flux or energy density, but they have several disadvantages that limit their applications. For example, calorimetric X-ray detectors do not provide time information; see-through diodes make spectral broadening difficult due to their variable spectral sensitivity; and silicon-based detectors are limited by insensitive layer effects and high sensitivity requirements. Therefore, other better methods need to be sought. [0003] Impedance thin film calorimeter has been widely used as a technology t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01T1/00C23C14/35C23C14/18C23F4/00
Inventor 张众梁玉王海霞
Owner TONGJI UNIV
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