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A method for preparing silicon-doped titanium oxide nanowires with superhydrophilic properties

A technology of silicon doping and titanium oxide, applied in chemical instruments and methods, from chemically reactive gases, single crystal growth, etc., can solve the problem that titanium dioxide nanowires are not prepared, and achieve low cost, simple process, and not easy to damage The effect of the accident

Inactive Publication Date: 2015-10-28
NANCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But at present, silicon-doped titanium dioxide nanowires have not been prepared in the world

Method used

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  • A method for preparing silicon-doped titanium oxide nanowires with superhydrophilic properties
  • A method for preparing silicon-doped titanium oxide nanowires with superhydrophilic properties
  • A method for preparing silicon-doped titanium oxide nanowires with superhydrophilic properties

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Experimental program
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Effect test

Embodiment 1

[0029] Reaction temperature 600 o C, Ti(OC 4 h 9 ) 4 constant temperature at 40 o C, Ti(OC 4 h 9 ) 4 The pipeline passed through is insulated to 45 o C, the Ti(OC 4 h 9 ) 4 、SiH 4 and N 2 Mixing, total gas volume 2500sccm / min, adjust reaction gas Si / Ti molar ratio to 3:1, N 2 : 99.6%, the pressure of each gas at the inlet of the gas mixing chamber is 130KPa, the pressure of the deposition system is maintained at 120KPa, and the deposition time is about 480 seconds. Then turn off Ti(OC 4 h 9 ) 4 , the SiH 4 and N 2 Mixed, the gas volume is 1500sccm / min, N 2 : 99.5%, about 15 seconds. Finally close Ti(OC 4 h 9 ) 4 and SiH 4 , will O 2 and N 2 Mixed gas is passed into reactor with the amount of 400sccm / min, O 2 / N 2 The molar ratio is 1:15, and the time is 8 hours. Formation of anatase phase TiO on the substrate 2 Nanowires. See the attached table for the results.

Embodiment 2

[0031] Reaction temperature 700 o C, Ti(OC 4 h 9 ) 4 constant temperature at 50o C, Ti(OC 4 h 9 ) 4 The pipeline passing through is insulated to 60 o C, the Ti(OC 4 h 9 ) 4 、SiH 4 and N 2 Mixing, total gas volume 1500sccm / min, adjust reaction gas Si / Ti molar ratio to 1:1, N 2 : 99.0%, the pressure of each gas at the inlet of the gas mixing chamber is 120KPa, the pressure of the deposition system is maintained at 110KPa, and the deposition time is about 300 seconds. Then turn off Ti(OC 4 h 9 ) 4 , the SiH 4 and N 2 Mixing, the gas volume is 1000sccm / min, N 2 : 98%, about 10 seconds. Finally close Ti(OC 4 h 9 ) 4 and SiH4, the O 2 and N 2 Mixed gas is passed into reactor with the amount of 300sccm / min, O 2 / N 2 The molar ratio is 1:10, and the time is 6 hours. Formation of rutile phase TiO on the substrate 2 Nanowires. See the attached table for the results.

Embodiment 3

[0033] Reaction temperature 500 o C, Ti(OC 4 h 9 ) 4 constant temperature at 45 o C, Ti(OC 4 h 9 ) 4 The pipeline passed through is insulated to 55 o C, the Ti(OC 4 h 9 ) 4 、SiH 4 and N 2 Mixing, the total gas volume is 2000sccm / min, and the reaction gas Si / Ti molar ratio is adjusted to 1:1, N 2 : 98.0%, the pressure of each gas at the inlet of the gas mixing chamber is 150KPa, the pressure of the deposition system is maintained at 120KPa, and the deposition time is about 600 seconds. Then turn off Ti(OC 4 h 9 ) 4 , the SiH 4 and N 2 Mixed, the gas volume is 1500sccm / min, N 2 : 95%, about 20 seconds. Finally close Ti(OC 4 h 9 ) 4 and SiH 4 , will O 2 and N 2 Mixed gas is passed into reactor with the amount of 500sccm / min, O 2 / N 2 The molar ratio is 1:1, and the time is 10 hours. Formation of anatase phase TiO on glass substrates 2 Nanowires. See the attached table for the results.

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Abstract

The invention discloses a preparation method of silicon-doped titanium oxide nanowires with super-hydrophilic performance. Ti(OC4H9)4 is used as a titanium source, O2 is used as an oxygen source, SiH4 is used as a silicon source, and N2 is used as diluent gas and provides a protective atmosphere. A titanium oxide film layer is formed on a solid substrate first with a chemical vapor deposition method and then oxidized with a thermal oxidation method, silicon doping is carried out under the action of self-induction, and then the silicon-doped titanium oxide nanowires are obtained. At last, the sample is cooled to the room temperature naturally with the protection of N2. The method is low in equipment requirements, safer in production, large in output and high in efficiency. With the method, the silicon-doped titanium oxide nanowires can be prepared in large scales and have the super-high hydrophilic performance, the photocatalytic performance of the silicon-doped titanium oxide nanowires can be greatly promoted, and the shape and the composition of the silicon-doped nanowires can be controlled through the change of technological conditions.

Description

technical field [0001] The invention relates to a preparation method of silicon-doped titanium oxide nanowires. Background technique [0002] Titanium dioxide, as a wide bandgap semiconductor material, has a relatively high optical band gap (rutile 3.0eV, anatase 3.2eV), and can generate electron-hole pairs under the irradiation of ultraviolet light. And compared with other semiconductor materials, titanium dioxide has many excellent characteristics, including stable chemical properties, high photocatalytic activity, thorough degradation of organic matter, low price, non-toxic, and no secondary pollution, etc., so it has received extensive attention. Studies have found that titanium dioxide has super hydrophilic properties after being doped with silicon, combined with the photocatalytic oxidation and hydrophilicity of titanium dioxide under ultraviolet light, foreign countries are actively developing titanium dioxide decontamination and anti-fog technologies applicable to di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/00C30B29/16C30B29/62
Inventor 杜军吴其刘娇彭海龙罗美郑典模邹建国
Owner NANCHANG UNIV
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