Method for growing gallium nitride thin film with ald equipment

Abstract

Disclosed is a method for using an ALD device to grow a gallium nitride film, comprising: step 10: treating the surface of a silicon carbide liner by using a standard liquid and hydrofluoric acid, and placing the silicon carbide liner in a reaction cavity of an atom layer deposition device; step 20: piping a gallium source gas into the reaction cavity of the atom layer deposition device, the gallium source gas acting as a first reaction precursor source and being chemically absorbed to the surface of the silicon carbide liner, and gallium atoms in the gallium source gas being absorbed to the silicon carbide liner; and step 30: gallium atoms absorbed on the silicon carbide liner reacting with a second reaction precursor, which is ionized, with the assistance of hydrogen until the gallium atoms on the surface of the silicon carbide liner are completely consumed. The step 20 and the step 30 are repeated, so that a gallium nitride film is formed on the surface of the silicon carbide liner. In the method provided by the present invention, nitrogen is uniformly doped in the entire structure, the content of the doped nitrogen is high, and the structure of the film is complete.

Description

technical field [0001] The invention relates to the preparation of gallium nitride materials, in particular to a method for growing gallium nitride thin films with ALD equipment. Background technique [0002] The research and application of GaN materials is the frontier and hotspot of semiconductor research at present. It is a new type of semiconductor material for the development of microelectronic devices and optoelectronic devices, and it is the basis for the development of the LED industry. GaN material has a wide direct bandgap, high thermal conductivity and breakdown electric field, small dielectric constant, strong radiation resistance, and good chemical stability (almost not corroded by any acid), it is used in optoelectronics, high temperature and high power devices And high-frequency microwave device applications have broad prospects. In the LED industry, GaN materials with a complete structure and matching crystal constants directly affect the performance of LEDs...

AI Technical Summary

Problems solved by technology

However, its growth temperature is too high, generally higher than 900°C, which easily leads to the lack of nitrogen and carbon pollution in the prepared GaN film

Under low temperature conditions, the use of plasma-assisted methods is a better way, but the results produced by the PECVD method are not ideal

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