A kind of preparation method of Cu(ru) alloy material without diffusion barrier layer with high thermal stability
A high thermal stability, alloy material technology, applied in metal material coating process, coating, ion implantation plating and other directions, can solve the problems affecting the electrical properties of the copper interconnect structure, the surface roughness of the barrier layer material, and the size of the copper interconnect structure. Small problems, etc., to achieve the effect of high-performance diffusion barrier properties, simple and easy-to-control methods, and stable deposition rates
Inactive Publication Date: 2015-12-23
JIANGSU UNIV OF SCI & TECH
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Problems solved by technology
First of all, due to the rough surface and high resistance of the barrier layer material, a thicker Cu seed layer needs to be deposited before the subsequent electrodeposition of the Cu layer, resulting in the inability to make the size of the entire copper interconnection structure small
Secondly, the high resistance of the barrier layer also affects the electrical properties of the entire copper interconnection structure.
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[0023] Cu(Ru) alloy materials with different Ru content were prepared by DC magnetron sputtering method. A JGP450 magnetron sputtering apparatus used a permanent magnet target with a diameter of 75mm and only DC power supply was applied. The maximum sputtering power was 500W. A sample turntable with self-rotation function, the sample can be heated or water-cooled, the maximum temperature can reach 550°C, and the heating rate can be adjusted from 10°C / min to 40°C / min. The three targets are confocal on the sample stage, which is suitable for the preparation of composite films and multi-layer films of various materials. The highest vacuum degree of the vacuum system can reach 6.6×10 -5 Pa, the ultra-high vacuum effectively protects the quality of the film.
[0024] Material preparation: the sputtering target is 99.999% Cu and 99.99% Ru in purity, 75 mm in diameter, about 3 mm thick, and the substrate is single crystal Si (111). In order to improve the adhesion between the Cu(R...
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Abstract
The invention relates to a preparation method of a diffusion impervious layer free Cu(Ru) alloy material with high thermal stability. The method is characterized by comprising the following steps: using a single crystal Si(111) wafer as a substrate material; selecting a high-purity Cu target and a high-purity Ru target; fixing the power of the Cu target at 80+ / -10; changing the sputtering power of the Ru target in a range of (3-15)+ / -1W so as to change the content of solid solution phase Ru in a Cu(Ru) alloy interconnecting material; and obtaining the alloy material through a direct current magnetic control confocal sputtering method. The diffusion impervious layer free Cu(Ru) alloy material with high thermal stability can be obtained, excellent electric performance can be maintained, and the actual application of the alloy material is better ensured. The method provided by the invention is simple to operate, good in repeatability and excellent in implementing effect.
Description
technical field [0001] The invention relates to the preparation of a Cu(Ru) alloy interconnection material with high thermal stability and no diffusion barrier layer. Background technique [0002] With the development of miniaturization and intensification of ultra-large-scale integrated circuits, the feature size continues to decrease. Because copper has good electrical conductivity and electromigration properties relative to aluminum, copper has replaced aluminum in the manufacture of ultra-large-scale integrated circuits (ULSI). primary interconnect material. In order to prevent the degradation of device performance caused by Cu diffusion into the Si-based substrate and to improve the adhesion between Cu and the Si-based substrate, it is necessary to deposit a diffusion barrier layer between the Cu interconnection line and the Si substrate to prepare a Cu / barrier layer. / Si interconnection structure, a barrier layer is deposited between copper and silicon, and then a thi...
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IPC IPC(8): C23C14/35C23C14/54C23C14/16
Inventor 汪蕾王阳董松涛黄婷
Owner JIANGSU UNIV OF SCI & TECH