Al-Sn film negative electrode and preparation method thereof

Abstract

The present invention discloses an Al-Sn film negative electrode and a preparation method thereof. The preparation method comprises the following steps: a, depositing an aluminum film on a brass substrate; b, adopting the sample obtained in the step a as a substrate, and adopting PMMA as an electron beam resist to prepare a hole array microstructure on the substrate; c, adopting PMMA as a protection layer, and carrying out an etching treatment on the sample obtained in the step b to obtain a hole array microstructure on the aluminum film; d, adopting the substrate with the microcosmic structure in the step c as a substrate, and adopting pure Sn as a target to deposit the pure Sn; and e, adopting hot acetone to remove the resist PMMA to obtain the Al-Sn film negative electrode. The method has advantages of designability, controllability, high flexibility and the like, wherein artificial control and design can be performed on Al-Sn distribution so as to buffer a volume expansion effect during a lithium ion battery charge and discharge reaction process and carry out quantitative analysis on volume structure change.

Description

technical field [0001] The invention relates to a preparation method for preparing Al-Sn thin film negative electrodes of lithium ion batteries by micro-nano processing. Background technique [0002] In recent years, with the development of micro-nano processing technology, microelectronic technology and microsystem technology are also entering nanoscale from micron level. In this process, the development of various photolithography technologies also plays a very key role. [0003] Electron beam lithography, as a new generation technology to replace optical lithography, has not entered the field of mass production until today because of its low exposure yield. Nevertheless, the technology has gradually found its way into other areas of micro-nanofabrication, and making optical masks is an important commercial use of e-beam lithography. In today's era of nanotechnology, electron beam exposure is an indispensable processing method. The use of modern electron beam exposure eq...

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Problems solved by technology

[0004] Mutually insoluble alloy system Al-Sn has been proven to be used as a negative electrode material for lithium-ion batteries (Ref: R.Z.Hu, L. Zhang, et al. Electrochemistry Communications. 2008, 10: 1109-1112.), some researchers have jointly Al-Sn film was obtained by deposition method (Ref: Renzong Hu, Meiqin Zeng, et al.Journal of Power Sources.2009,188:268-273.), the distribution of Al and Sn prepared by this method is irregular , and Sn is easy to generate nanowires during the deposition process, although the final material has better performance, but considering Li + The diffusion rate in Al is small, which will inevitably limit the further improvement of the capacity and cycle performance of the Al-Sn thin film negative electrode. Therefore, if a new microstructure can be designed and prepared, it will help Li + Diffusion in Al, and can also slow down the volume expansion effect of electrode materials in the process of charging and discharging, will be able to obtain better performance

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