Preparation method for large area surface-enhanced Raman active substrate by inclination growth

A surface-enhanced Raman and active substrate technology, which is applied in the field of Raman spectroscopy analysis and detection technology and nanomaterials, can solve the problems of small substrate area, poor substrate repeatability, and high cost, and achieve large substrate area and controllable substrate structure , the effect of low production cost

Inactive Publication Date: 2013-09-04
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

For the electrochemical redox method and the metal sol method, the substrates prepared generally have problems such as poor repeatability, low stability and complicated preparation process.
Focused ion beam etching and electron beam etching techniques have high etching resolution and pattern making freedom, so metal nanostructure substrates with good repeatability and high stability can be obtained,...

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  • Preparation method for large area surface-enhanced Raman active substrate by inclination growth
  • Preparation method for large area surface-enhanced Raman active substrate by inclination growth
  • Preparation method for large area surface-enhanced Raman active substrate by inclination growth

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Embodiment Construction

[0019] see figure 1 As shown in the schematic diagram of the experimental device, the present invention provides a method for preparing an oblique growth of a large-area surface-enhanced Raman active substrate, comprising the following steps:

[0020] Step 1: Take a substrate, the material of which is glass, single crystal Si, sapphire, GaAs or GaN.

[0021] Step 2: Clean the substrate with physical and chemical methods to remove surface impurities. Taking a single crystal Si substrate as an example, first scrub the polished surface of the substrate with cotton soaked in acetone; place it in acetone and absolute ethanol in sequence for 5 minutes (temperature 55°C); rinse with deionized water 40 times; Boil it with a mixed solution of sulfuric acid and hydrogen peroxide with a concentration of 4:1 for 10 minutes (add hydrogen peroxide after the sulfuric acid smokes); rinse it with deionized water 40 times; then use a concentration of 3:1:1 deionized water, hydrogen peroxide an...

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Abstract

The invention relates to a preparation method for a large area surface-enhanced Raman active substrate by inclination growth. The preparation process comprises a first step of taking one substrate; a second step of washing the substrate with a physical and chemical method; a third step of obliquely placing the washed substrate in a growth chamber; and a fourth step of growing a metal nano structure on the substrate by a vapor deposition method to finish the preparation. The surface-enhanced Raman active substrate prepared by the method has the advantages of large area, simple process, a controllable structure, low cost and high reliability.

Description

technical field [0001] The invention belongs to the fields of Raman spectrum analysis and detection technologies such as biosensing, electrochemical monitoring, and environmental analysis, and nanomaterials, and specifically relates to a preparation method for oblique growth of large-area surface-enhanced Raman active substrates. Background technique [0002] Raman spectroscopy is a spectral molecular detection method, which can identify substances and determine its chemical composition and relative content, and has broad application prospects in the field of sensing and detection. This spectral analysis method is based on the Raman scattering effect. By analyzing the scattering spectrum with a different frequency from the incident light, the molecular vibration and rotation information can be obtained, and then applied to the study of molecular structure. In organic chemistry, Raman spectroscopy can be used as a means of structural identification. The size, intensity and Ra...

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Application Information

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IPC IPC(8): B81C1/00G01N21/65
Inventor 宋国峰王立娜胡海峰徐云韦欣
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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