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Sliding friction nano generator and power generation method

A nanometer generator and sliding friction technology, applied in the direction of friction generators, etc., can solve the problems of power supply components that cannot be used for microelectronic devices, large generator volume, complex structure, etc., and achieve simple structure, small size, and wide application Effect

Active Publication Date: 2013-10-16
BEIJING INST OF NANOENERGY & NANOSYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These generators all require relatively concentrated and high-intensity energy input, and it is basically impossible to effectively convert the kinetic energy of low intensity generated in people's daily activities and existing in nature into electrical energy.
At the same time, traditional generators are large in size and complex in structure, and cannot be used as power supply components for microelectronic devices at all.

Method used

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  • Sliding friction nano generator and power generation method
  • Sliding friction nano generator and power generation method
  • Sliding friction nano generator and power generation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0097] The first conductive element adopts a metal copper film layer with a thickness of 100nm, the first friction layer adopts a Teflon (polytetrafluoroethylene) film with a thickness of 25 microns, and the second friction layer adopts a metal aluminum film layer with a thickness of 100nm. The second conductive element is an indium tin oxide ITO thin film, and the macroscopic size of these film layers is 5 cm×7 cm. The metal copper film layer and the ITO film layer are connected to the ammeter through wires, and the Teflon film and the metal aluminum film are placed in contact with each other completely overlapping, and then the metal copper film layer is repeatedly pushed and pulled with fingers with insulating gloves to make the Teflon film Periodic reciprocating relative sliding occurs between the film layer and the metal aluminum film layer, and there is a short-circuit current output on the ammeter, indicating that the generator is working normally. The generator can dri...

Embodiment 2

[0100] Polydimethylsiloxane (English abbreviated as PDMS) with a thickness of 50 microns and 3cm×8cm is used as the first friction layer 10, and a silicon wafer with the same macroscopic size is used as the second friction layer, and the silicon wafer is spin-coated A layer of photoresist is applied, and a square window array with a side length of micron or submicron is formed on the photoresist by photolithography; the silicon wafer after photolithography is chemically etched by hot potassium hydroxide, A pyramid-shaped array of recessed structures is formed at the window. When the silicon wafer and PDMS are in contact with each other under the action of external force and relatively slide, due to the good elasticity of PDMS, it can enter and fill the concave structure on the surface of the silicon wafer, thereby increasing the distance between the silicon wafer and the silicon wafer. The frictional contact area can obtain better electrical output effect.

Embodiment 3

[0102] In this embodiment, on the basis of embodiment 1, only the polytetrafluoroethylene film is modified, and the others are the same as in embodiment 1, and will not be repeated here. Nanowire arrays were prepared by inductively coupled plasma etching on the surface of the polytetrafluoroethylene film. First, about 10 nanometers of gold was deposited on the surface of the polytetrafluoroethylene film with a sputtering device, and then the polytetrafluoroethylene film was placed in an inductor. In the coupled plasma etching machine, etch the side on which the gold is deposited, and pass O 2 , Ar and CF 4 Gas, the flow rate is controlled at 10sccm, 15sccm and 30sccm respectively, the pressure is controlled at 15mTorr, the working temperature is controlled at 55°C, the plasma is generated with a power of 400 watts, and the plasma is accelerated with a power of 100 watts for about 5 minutes of etching , to obtain a polymer polytetrafluoroethylene nanorod array with a length of...

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Abstract

The invention provides a sliding friction nano generator. The friction nano generator comprises a first friction layer, a first conductive element, a second friction layer and a second conductive element, wherein the first conductive element is contacted with and arranged below the first friction layer, the second conductive element is contacted with and arranged above the second friction layer, and the upper surface of the first friction layer and the lower surface of the second friction layer are oppositely arranged; relative sliding friction which is tangent to a contact surface between the upper surface of the first friction layer and the lower surface of the second friction layer occurs under the action of an external force, the contact area changes, and electric signals are outputted to an external circuit through the first conductive element and the second conductive element. When a periodic tangential external force is applied to the sliding friction nano generator provided by the invention, AC pulse signal output can be formed between the first conductive element and the second conductive element.

Description

technical field [0001] The invention relates to a generator and a power generation method thereof, in particular to a friction nanometer generator which converts mechanical energy applied by an external force into electric energy and a method for generating power by using the generator. Background technique [0002] Today, with the rapid development of microelectronics and material technology, a large number of new microelectronic devices with multiple functions and high integration have been developed continuously, and have shown unprecedented application prospects in various fields of people's daily life. However, the research on the power supply system matched with these microelectronic devices is relatively lagging behind. Generally speaking, the power supply of these microelectronic devices all comes from batteries directly or indirectly. Batteries are not only large in size and heavy in weight, but also contain toxic chemical substances that are potentially harmful to ...

Claims

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Application Information

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IPC IPC(8): H02N1/04
CPCH02N1/04
Inventor 王中林朱光王思泓林龙陈俊
Owner BEIJING INST OF NANOENERGY & NANOSYST
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