Aluminum-gallium co-doping zinc oxide nano-powder and preparation method for high intensity high conductivity sputtering coating target material thereof

A technology of zinc oxide nanometer and zinc oxide powder, applied in the fields of powder metallurgy and ceramics, can solve the problems of expensive equipment, inability to prepare large-size target materials, and poor performance of AZO film, and achieve the effect of improving density and conductivity

Inactive Publication Date: 2013-11-27
BEIHANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main disadvantages of this method: the size of the target is limited by the pressure of the equipment and the pressure cylinder, and it is impossible to prepare a large-size target; the equipment is expensive, the investment cost is high; the production efficiency is low, the production cost is high, and the product competitiveness is not strong
The mechanism is that the sintering agent forms a liquid at high temperature (su

Method used

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  • Aluminum-gallium co-doping zinc oxide nano-powder and preparation method for high intensity high conductivity sputtering coating target material thereof

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Embodiment 1

[0066] The invention discloses a method for preparing aluminum-gallium co-doped zinc oxide nanopowder and its high-density and high-conductivity sputtering coating target, comprising the following steps:

[0067] Step 1 metal dissolution: dissolving high-purity metals: using nitric acid to dissolve high-purity metal aluminum, high-purity metal zinc, and high-purity metal gallium to form transparent aluminum nitrate, zinc nitrate and gallium nitrate solutions.

[0068] Step 2 for batching: divide the above three transparent solutions into containers according to the predetermined ratio, that is, according to the atomic ratio of 97% Zn, 3% (Al+Ga) (the optimal atomic ratio is Zn:Al:Ga=97:2.7: 0.3) Divide into respective containers for later use.

[0069] Step 3 chemical precipitation: use the homogeneous co-precipitation method to mix the above three transparent solutions in a 5000mL three-necked beaker according to the molar ratio of zinc, aluminum and gallium as Zn:Al:Ga=97:2....

Embodiment 2

[0076] The invention discloses a method for preparing aluminum-gallium co-doped zinc oxide nano-powder and its high-density and high-conductivity sputtering coating target, comprising the following steps:

[0077] Step 1 metal dissolution: dissolving high-purity metals: using nitric acid to dissolve high-purity metal aluminum, high-purity metal zinc, and high-purity metal gallium to form transparent aluminum nitrate, zinc nitrate and gallium nitrate solutions.

[0078] Step 2: batching: batching: the above three transparent solutions are divided into containers according to a predetermined ratio, that is, according to the atomic ratio of 97% Zn, 3% (Al+Ga) (the preferred atomic ratio is Zn:Al:Ga=97 :2.7:0.3) Pack into respective containers for later use.

[0079] Step 3 Chemical Precipitation: Use the homogeneous co-precipitation method to mix the above three transparent solutions in a 5000mL three-necked beaker according to the molar ratio of zinc, aluminum, and gallium in th...

Embodiment 3

[0086] The invention discloses a method for preparing aluminum-gallium co-doped zinc oxide nanopowder and its high-density and high-conductivity sputtering coating target, comprising the following steps:

[0087] Step 1 metal dissolution: dissolving high-purity metals: using nitric acid to dissolve high-purity metal aluminum, high-purity metal zinc, and high-purity metal gallium to form transparent aluminum nitrate, zinc nitrate and gallium nitrate solutions.

[0088] Step 2: batching: batching: the above three transparent solutions are divided into containers according to the predetermined ratio, that is, according to the atomic ratio of 97% Zn, 3% (Al+Ga) (the optimal atomic ratio is Zn:Al:Ga=97 :2.7:0.3) Pack into respective containers for later use.

[0089] Step 3 chemical precipitation: use the homogeneous co-precipitation method to mix the above three transparent solutions in a 5000mL three-necked beaker according to the molar ratio of zinc, aluminum and gallium in the ...

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Abstract

The invention discloses aluminum-gallium co-doping zinc oxide nano-powder and a preparation method for a high intensity high conductivity sputtering coating target material thereof. The preparation method comprises the following steps: 1, dissolving high pure metal so as to form transparent aluminum nitrate, zinc nitrate and gallium nitrate solutions; 2, dosing: putting the three kinds of solutions in containers respectively according to the proportion; 3, performing chemical precipitation: mixing the transparent solutions as per proportion and specified procedures through adopting the homogeneous precipitation method so as to prepare aluminum-gallium co-doping zinc oxide nano-powder; 4, cleaning: washing the mixed precipitate via deionized water, and fully stirring till no other irons exist in the mixture; 5, calcining: putting the nano-powder into a high temperature furnace for calcination to obtain the aluminum-gallium co-doping zinc oxide nano-powder; 6, prilling: adding adhesive into the aluminum-gallium co-doping zinc oxide nano-powder and drying to obtain aluminum-gallium co-doping zinc oxide nano-powder to be formed; 7, forming: pressing the aluminum-gallium co-doping zinc oxide nano-powder to be formed into the initial blank; 8, sintering: putting the initial blank into the high temperature furnace for free pressure sintering or gas pressure sintering.

Description

(1) Technical field: [0001] The present invention relates to a method for preparing a powder and a target, in particular to a method for preparing an aluminum-gallium co-doped nano-zinc oxide (note: hereinafter referred to as AGZO for aluminum-gallium co-doped zinc oxide) powder and a high-density and high-conductivity sputtering coating target , belongs to the field of powder metallurgy and ceramic technology. (2) Background technology: [0002] Optoelectronic devices such as solar cells and various displays such as liquid crystal displays (LCD) and mobile phone screens require transparent conductive films (TCO) as transparent conductive electrode materials. As the main material of TCO, indium tin oxide (ITO) is widely used in the above-mentioned in optoelectronic devices. However, indium is a rare mineral, which is expensive and has few reserves. Therefore, aluminum-doped zinc oxide (AZO) materials, which are cheap, conductive and transparent, are becoming a research and...

Claims

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Application Information

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IPC IPC(8): C01G9/02C04B35/453C04B35/622
Inventor 张维佳刘嘉宋登元吴然嵩张雷马强马晓波
Owner BEIHANG UNIV
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