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Bismuth oxyhalide light-emitting material with doped rare earth ions and preparation method thereof

A technology of rare earth ions and bismuth oxyhalide, which is applied in the direction of luminescent materials, chemical instruments and methods, can solve the problems of high preparation cost and low luminous efficiency, and achieve the effect of simple preparation method, low raw material cost and easy control

Inactive Publication Date: 2013-12-04
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the disadvantages of low luminous efficiency or high preparation cost of existing rare earth ion doped indirect semiconductor materials, and to provide a method to change the bandgap structure of indirect semiconductors by doping specific rare earth ions, and make the indirect semiconductor bismuth oxyhalide Converted into a rare earth-doped semiconductor luminescent material with both high-efficiency absorption and luminescence

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) According to the molar ratio of Bi ion: Eu ion: Br ion = 0.999: 0.001:1, weigh Bi(NO 3 ) 3 .5H 2 O, Eu(NO 3 ) 3 , KBr, then dissolved in water to prepare a solution with a concentration of 0.1 mol / L; then stir evenly, then adjust the pH value to 0.5 with dilute hydrochloric acid, and then transfer it to a hydrothermal kettle with a polytetrafluoroethylene lining. The filling degree is 0.8, the temperature is increased to 120°C, and the temperature is kept for 12 hours to obtain the product material;

[0021] (2) The product material obtained in step (1) is washed three times with deionized water and ethanol, and then dried to obtain the chemical formula Bi 0.999 Eu 0.001 OBr rare earth ion doped bismuth bromide luminescent material. This material can be obtained under the ultraviolet light of 254nm and 360nm. 3+ Bright red luminescence. The excitation range of the near-ultraviolet band is 300~400nm. The excitation peak is very wide and strong, overlapping with the band ...

Embodiment 2

[0023] (1) According to the molar ratio of Bi ion: Eu ion: Ho ion: Br ion=0.975:0.02:0.005:1, weigh Bi(NO 3 ) 3 .5H 2 O, Eu(NO 3 ) 3 , Ho(NO 3 ) 3 , KBr, and then dissolve it in ethanol to prepare a solution with a concentration of 1mol / L; then add polyvinylpyrrolidone to the solution in an amount of 10% of the total mass of bismuth nitrate, rare earth nitrate and potassium halide, and stir it evenly. Adjust the pH value to 6 with dilute ammonia water, then transfer it to a hydrothermal kettle with a polytetrafluoroethylene lining, with a filling degree of 0.8, and heat to 160°C for 12 hours to obtain the product material;

[0024] (2) The product material obtained in step (1) is washed with deionized water and ethyl acetate, and then heat-treated at 200°C for 4 hours to obtain the chemical formula Bi 0.975 Eu 0.02 Ho 0.005 OBr rare earth ion doped bismuth oxyhalide luminescent material. This material can be obtained under the ultraviolet light of 254nm and 360nm. 3+ Bright red gl...

Embodiment 3

[0026] (1) According to the molar ratio of Bi ion: Eu ion: Sm ion: Cl ion=0.85:0.1:0.05:1, it is called Bi(NO 3 ) 3 .5H 2 O, Eu(NO 3 ) 3 , Sm(NO 3 ) 3 , KCl, and then dissolved in methanol to prepare a solution with a concentration of 1.2mol / L; then stir evenly, then adjust the pH to 2 with dilute hydrochloric acid, and continue to stir for 12 hours to obtain the product material;

[0027] (2) Wash the product material obtained in step (1) with deionized water, and then heat it at 500°C for 2 hours to obtain the chemical formula Bi 0.85 Eu 0.1 Sm 0.05 OCl rare earth ion doped bismuth oxyhalide luminescent material. This material can be obtained under the ultraviolet light of 254nm and 360nm. 3+ Bright red glow and Sm 3+ The red luminescence of ions, in which the excitation range of the near-ultraviolet band is 300~400nm, the excitation peak is very wide and strong, overlapping with the band gap of the material, and the material luminescence utilizes the semiconductor band gap of b...

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Abstract

The invention provides a bismuth oxyhalide light-emitting material with doped rare earth ions and a preparation method of the bismuth oxyhalide light-emitting material with the doped rare earth ions. The chemical formula of the bismuth oxyhalide light-emitting material with the doped rare earth ions is Bil-x-yEuxReyOM, wherein the x is 0.001-0.5, the y is 0-0.5, the M is one or more of Cl, Br and I, and the Re is any one or more of Tb, Ce, Nd, Dy, Sm, Pr, Lu, Er, Tm, Yb, Gd, Ho and La. The preparation method of the bismuth oxyhalide light-emitting material with the doped rare earth ions comprises the steps that (1) bismuth nitrate, rare earth nitrate and halogenated potassium are weighed, and a solution is prepared; (2) thermal treatment is carried out on the obtained solution to obtain produced materials, washing is carried out, thermal treatment is carried out again, and the bismuth oxyhalide light-emitting material with the doped rare earth ions can be obtained, wherein the chemical formula of the bismuth oxyhalide light-emitting material with the doped rare earth ions is Bil-x-yEuxReyOM. The bismuth oxyhalide light-emitting material with the doped rare earth ions can effectively achieve doping, has the good light-emitting characteristic, and is high in absorption efficiency and excitation efficiency to ultraviolet light and light of the visible light waveband, simple in preparation method, easy to control, low in cost of raw materials and low in resultant temperature of the high-temperature solid state method.

Description

technical field [0001] The invention belongs to the technical field of luminescent materials, and relates to a bismuth oxyhalide luminescent material doped with rare earth ions and a preparation method thereof. Background technique [0002] Semiconductors can be used as luminescent materials and photocatalytic materials. When the photon energy of the irradiating light is higher than the bandgap energy of the semiconductor, the irradiating light can be completely absorbed by the semiconductor. Therefore, semiconductor materials have broadband absorption characteristics for irradiation or excitation light. For semiconductor materials of the direct bandgap type, when used as light-emitting materials, they have higher stimulated emission efficiency. However, at present, such direct bandgap semiconductor materials that can be excited by ultraviolet or visible light and used for illuminating luminescent materials, such as gallium nitride, have problems such as expensive, complic...

Claims

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Application Information

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IPC IPC(8): C09K11/86
Inventor 宋志国李永进李臣尹兆益邱建备杨正文周大成杨勇余雪徐旭辉韩缙
Owner KUNMING UNIV OF SCI & TECH
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