Quartz crucible for ingotting polycrystalline silicon solar cell, and spraying method thereof
A technology of solar cells and quartz crucibles, applied in the growth of polycrystalline materials, chemical instruments and methods, coatings, etc., can solve the problems of inability to form uniform nucleation centers, low yield of ingots, inability to dissolve silicon powder, etc. Achieve the effects of easy mass and rapid promotion, stable product performance, and less crystal defects
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Embodiment 1
[0018] Mix silicon powder and silicon nitride powder with a purity greater than 99.9% and a particle size of less than 100um at a weight ratio of 1:8, dissolve them in 300mL of prepared solvent, and prepare a mixture; the inner wall of the crucible is sprayed with silicon nitride according to a conventional process Coating, after the coating is dry, spray the mixture on the bottom half of the crucible. Keep the temperature of the crucible at 25°C until the mixture is completely dry, and the thickness of the deposited layer is about 0.1mm; charge and cast the ingot according to the conventional ingot casting process. Take some small square ingots with and without spraying mixture, compare the grain morphology, corrosion defects, test the minority carrier life, and collect all silicon wafers for battery efficiency comparison. The comparison results are as follows: figure 1 shown.
[0019] The comparison results are as follows:
[0020] nucleating agent Non-n...
Embodiment 2
[0022] Mix silicon powder and silicon nitride powder with a purity greater than 99.9% and a particle size of less than 100um at a weight ratio of 1:10, dissolve them in 300mL of prepared solvent, and prepare a mixture; the inner wall of the crucible is sprayed with silicon nitride according to a conventional process Coating, after the coating is dry, spray the mixture on the bottom half of the crucible. Keep the temperature of the crucible at 35°C until the mixture is completely dry, and the thickness of the deposited layer is about 0.3mm; charge and ingot according to the conventional ingot casting process. Take some small square ingots with and without spraying mixture, compare the grain morphology, corrosion defects, test the minority carrier life, and collect all silicon wafers for battery efficiency comparison.
[0023] The comparison results are as follows:
[0024] nucleating agent Non-nucleating agent Grain diameter / mm 2～6 7～18 Average l...
Embodiment 3
[0026] Mix silicon powder and silicon nitride powder with a purity greater than 99.9% and a particle size of less than 100um at a weight ratio of 1:6, dissolve them in 300mL of prepared solvent, and prepare a mixture; the inner wall of the crucible is sprayed with silicon nitride according to a conventional process Coating, after the coating is dry, spray the mixture on the bottom half of the crucible. Keep the temperature of the crucible at 50°C until the mixture is completely dry, and the thickness of the deposited layer is about 0.2mm; charge and ingot according to the conventional ingot casting process. Take some small square ingots with and without spraying mixture, compare the grain morphology, corrosion defects, test the minority carrier life, and collect all silicon wafers for battery efficiency comparison.
[0027] The comparison results are as follows:
[0028] nucleating agent Non-nucleating agent Grain diameter / mm 2～6 10～20 Average l...
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