Boron doped graphene and preparation method thereof

A graphene and boron doping technology, which is applied in the field of boron doped graphene and its preparation, can solve the problems of difficult industrial preparation, high equipment and operation requirements, and achieve large-scale industrial production, low equipment requirements, and excellent electrical conductivity performance effect

Inactive Publication Date: 2013-12-18
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for preparing boron-doped graphene in view of the defects that the chemical vapor deposition method and the arc discharge method for preparing boron-doped graphene

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Graphite with a purity of 99.5% is used as a raw material, and 1g of graphite is added to a mixed solution consisting of 92ml of concentrated sulfuric acid (98% by mass fraction) and 24ml of concentrated nitric acid (65% by mass fraction), and the mixed solution is placed in ice water. Stir in the mixed bath environment for 20 minutes, then add 3g potassium permanganate to the mixed solution, stir for 1 hour to oxidize the graphite initially, then heat the mixed solution to 85°C, and keep it warm for 30 minutes to further oxidize the graphite, then add 92ml Deionized water, continue to keep at a temperature of 85°C for 30 minutes, finally add 8ml hydrogen peroxide (30% mass fraction) to the mixed solution to remove potassium permanganate, filter with suction and wash with 100ml dilute hydrochloric acid and 150ml deionized water The resulting solid product was washed, washed three times in total, and then the solid product was placed in a vacuum oven at 60°C for 12 hours ...

Embodiment 2

[0026] Graphite with a purity of 99.5% is used as a raw material, and 1g of graphite is weighed and added to a mixed solution consisting of 92ml of concentrated sulfuric acid (98% by mass fraction) and 20ml of concentrated nitric acid (65% by mass fraction), and the mixed solution is placed in ice water. Stir in the mixed bath environment for 20 minutes, then add 4g potassium permanganate to the mixed solution, stir for 1 hour to oxidize the graphite initially, then heat the mixed solution to 95°C, and keep it warm for 30 minutes to further oxidize the graphite, then add 92ml Deionized water, continue to keep at a temperature of 95°C for 30 minutes, finally add 8ml hydrogen peroxide (30% mass fraction) to the mixed solution to remove potassium permanganate, filter with suction and wash with 100ml dilute hydrochloric acid and 150ml deionized water The resulting solid product was washed for three times, and then the solid product was placed in a vacuum oven at 60°C for 12 hours t...

Embodiment 3

[0028] Graphite with a purity of 99.5% is used as a raw material, and 2g of graphite is weighed and added to a mixed solution consisting of 160ml of concentrated sulfuric acid (98% by mass fraction) and 60ml of concentrated nitric acid (65% by mass fraction), and the mixed solution is placed in ice water Stir in a mixed bath environment for 20 minutes, then add 2g of potassium permanganate to the mixed solution, stir for 1 hour to oxidize the graphite initially, then heat the mixed solution to 80°C, and keep it warm for 30 minutes to further oxidize the graphite, then add 92ml Deionized water, continue to keep at a temperature of 80°C for 30 minutes, finally add 10ml hydrogen peroxide (30% by mass fraction) to the mixed solution to remove potassium permanganate, filter with suction and wash with 100ml dilute hydrochloric acid and 150ml deionized water The obtained solid product was washed, washed three times in total, and then the solid product was placed in a vacuum oven at 60...

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PUM

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Abstract

The invention belongs to the technology field of graphene materials, and discloses a boron doped graphene and a preparation method thereof. The invention adopts a high temperature hot doping method to prepare boron doped graphene. The method comprises following steps: taking graphite as the raw material, and oxidizing the graphite so as to obtain graphite oxide; placing the graphite oxide in a mixed gas atmosphere composed of inert gas and boron source gas, heating to the temperature of 800 to 1100 DEG C, then maintaining the temperature for 0.5 to 2 hours, and cooling the product to the room temperature so as to obtain boron doped graphene. The technology by utilizing the high temperature hot doping method to prepare boron doped graphene has the advantages of few steps, simple operation, and low requirements on equipment, and is benefit for mass industrial production. Graphite oxide is a carbon material with a preferably bad ordering, the material with a lower ordering is more suitable for carrying out boron doping, and the doping process is more homogenous by adopting gas state boron source. The prepared boron doped graphene presents a P-type doping, because the original conjugated structure of graphene is not affected, the boron doped graphene has a more excellent conductive performance than that of graphene.

Description

technical field [0001] The invention relates to the technical field of graphene materials, and more specifically, to a boron-doped graphene and a preparation method thereof. Background technique [0002] Graphene is a planar film composed of carbon atoms with sp2 hybrid orbitals forming a hexagonal honeycomb lattice. It is a two-dimensional material with a thickness of only one carbon atom. Since its discovery in 2004, graphene has attracted great attention from various industries due to its two-dimensional single-molecule structure and excellent physical properties. It has a high theoretical specific surface area, excellent mechanical strength, good flexibility and high conductivity, etc., and can be applied in technical fields such as composite materials, battery electrode materials, hydrogen storage materials, field emission materials and ultra-sensitive sensors. Revolutionizing materials in electronics, energy, and more. [0003] Boron-doped graphene and nitrogen-doped...

Claims

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Application Information

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IPC IPC(8): C01B31/04B82Y30/00B82Y40/00C01B32/184
Inventor 周明杰钟辉王要兵
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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