Method for preparing Cu2ZnSn(S,Se)4 solar cell absorbing layer film by using mercaptan-based ink

A technology of solar cells and absorbing layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of large-scale industrialization restrictions, inability to apply large-scale, toxic safety, etc., and achieve stable physical and chemical properties of raw materials, low cost, and low composition Precisely Controllable Effects

Inactive Publication Date: 2014-02-05
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method has created the highest conversion efficiency records for CZTSSe-based solar cells, there is still a large gap between these records and the theoretical conversion efficiency of 32.2% for CZTSS

Method used

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  • Method for preparing Cu2ZnSn(S,Se)4 solar cell absorbing layer film by using mercaptan-based ink
  • Method for preparing Cu2ZnSn(S,Se)4 solar cell absorbing layer film by using mercaptan-based ink
  • Method for preparing Cu2ZnSn(S,Se)4 solar cell absorbing layer film by using mercaptan-based ink

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] First, 0.341g CuCl 2 2H 2 O, 0.176g ZnCl 2 , 0.256g SnCl 2 2H 2 O, 0.19236g of sulfur powder, dissolved in 20ml of hexanethiol solvent in turn, fully stirred at room temperature until black ink.

[0039] Secondly, drop the ink solution on the soda-lime glass of the Mo-plated substrate, spin-coat at 800rmp, put it in an oven at 130°C, and dry it for 5min under non-blast conditions; then spin-coat and repeat the drying process 20 times , to obtain a prefabricated membrane with a certain thickness.

[0040] Finally, put a prefabricated film sample of a certain thickness and sulfur powder in a graphite box. The sulfur powder is placed in the groove under the film sample. The sulfur vapor can fill the entire graphite box through the slot hole, and the graphite box is placed in a tubular annealing furnace. , at N 2 The annealing treatment is carried out under the protection of the atmosphere, and the whole selenization annealing process is controlled by temperature prog...

Embodiment 2

[0043] First, 0.341g CuCl 2 2H 2 O, 0.176g ZnCl 2 , 0.256g SnCl 2 2H 2 O, 0.19236g of sulfur powder, dissolved in 20ml of hexanethiol solvent in turn, fully stirred at room temperature until black ink.

[0044] Secondly, drop the ink solution on the soda-lime glass of the Mo-plated substrate, spin-coat at 800rmp, put it in an oven at 130°C, and dry it for 5min under non-blast conditions; then spin-coat and repeat the drying process 20 times , to obtain a prefabricated membrane with a certain thickness.

[0045] Finally, a prefabricated film sample of a certain thickness and sulfur powder / selenium powder are mixed and placed in a self-made graphite box. The sulfur and selenium powder are placed in the groove under the film sample, and the sulfur / selenium vapor can fill the entire graphite box through the slot. Place the graphite box in the tube annealing furnace, under N 2 The annealing treatment is carried out under the protection of the atmosphere, and the temperature p...

Embodiment 3

[0048] First, 0.341g CuCl 2 2H 2 O, 0.176g ZnCl 2 , 0.256g SnCl 2 2H 2 O, 0.19236g of sulfur powder, dissolved in 20ml of hexanethiol solvent in turn, fully stirred at room temperature until black ink.

[0049] Secondly, drop the ink solution on the soda-lime glass of the Mo-plated substrate, spin-coat at 800rmp, put it in an oven at 130°C, and dry it for 5min under non-blast conditions; then spin-coat and repeat the drying process 20 times , to obtain a prefabricated membrane with a certain thickness.

[0050] Finally, put a prefabricated film sample of a certain thickness and selenium powder in the graphite box, the selenium powder is placed in the groove under the film sample, the selenium vapor can fill the entire graphite box through the slot hole, and the graphite box is placed in the tubular annealing furnace , at N 2 The annealing treatment is carried out under the protection of the atmosphere, and the temperature program is used to control the entire selenizatio...

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Abstract

The invention provides a method for preparing Cu2ZnSn(S,Se)4 solar cell absorbing layer film by using mercaptan-based ink, belonging to the technical field of a solar cell absorbing layer film. The method comprises the steps of (a) stable precursor solution preparation under an air condition, (b) the preparation of a precursor film by using a spinning coating method, (c) drying, (d) multiple times of spinning coating and drying and (e) annealing processing. According to the film preparation method, the use of expensive original materials and devices is not needed, mercaptan which is a volatile, low carbon organic compound is taken as a solvent, and a problem of the introduction of carbon and oxygen elements in the previous copper zinc tin sulfide nanocrystal synthesis process can be overcome. The controllability of each process step is good, the preparation of the absorbing layer film with large grains, density and good photoelectric performance is facilitated, the process is simple, the repeatability is strong, and the large-scale production is easy to realize.

Description

technical field [0001] The invention relates to a kind of thiol-based ink to prepare Cu 2 ZnSn(S,Se) 4 Method for solar cell absorber film. In a lower temperature range, using thiol as a solvent to configure a stable ink system can overcome the introduction of carbon and oxygen elements in the previous synthesis process of copper-zinc-tin-sulfur nanocrystalline ink. The invention belongs to the technical field of solar cell absorbing layer thin films. Background technique [0002] At present, solar energy industrialization is dominated by monocrystalline silicon solar cells, amorphous silicon solar cells and copper indium gallium selenide (CuIndium gallium selenide) 1-x Ga x Se 2 , referred to as CIGS) thin-film solar cells. However, the cost of crystalline silicon solar cells is high, which is restricted in the promotion; the inherent metastable state and multi-defect characteristics of amorphous silicon thin-film solar cells lead to low cell stability and serious pho...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/0322H01L31/03923Y02E10/541Y02P70/50
Inventor 汪浩宗恺孙玉绣王先明邓思旭吴春卉刘晶冰严辉
Owner BEIJING UNIV OF TECH
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