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Method for synthesizing silver oxide semiconductor thin-film material through room temperature in-situ control

A thin-film material and semiconductor technology, which is applied in the field of in-situ controlled synthesis of silver oxide semiconductor thin-film materials at room temperature, can solve the problems of complex reaction process, only powder generation, high energy consumption, etc., and achieves controllable reaction process, convenient operation and energy consumption. low effect

Active Publication Date: 2014-02-26
XUCHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide an in-situ controlled synthesis of silver oxide at room temperature in view of the shortcomings of electric field dependence, high vacuum, high energy consumption, complex reaction process and only powder generation in the current preparation process of silver oxide semiconductor materials. A method for semiconductor thin film materials, the reaction process of this method does not need to use any solvents, surfactants or other chemical additives, the operation is simple, low energy consumption, low production cost, and has broad industrial application prospects

Method used

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  • Method for synthesizing silver oxide semiconductor thin-film material through room temperature in-situ control
  • Method for synthesizing silver oxide semiconductor thin-film material through room temperature in-situ control
  • Method for synthesizing silver oxide semiconductor thin-film material through room temperature in-situ control

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Experimental program
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Effect test

Embodiment 1

[0042] 1. Preparation: Clean the ITO conductive glass with detergent and deionized water for 20 minutes, and then use concentrated ammonia water (25% by mass) / hydrogen peroxide (30% by mass) / deionized water (volume ratio: 1: The mixed solution of 2:5) was treated at 80°C for 30 minutes, and finally ultrasonically cleaned with deionized water for 20 minutes. The treated ITO conductive glass was dried at 80°C and stored in a clean desiccator for later use. Using the DC magnetron sputtering method to sputter a layer of simple silver thin film layer with a thickness of 60nm on the ITO conductive glass substrate, the thickness of the silver layer is controlled by the film thickness monitor (FTM), and the obtained ITO conductive glass with the simple silver thin film layer is stored in Store in a desiccator.

[0043] 2. Reaction steps: Control the reaction conditions, that is, keep the temperature at 10°C and keep the relative humidity at 30%. Put the ITO conductive glass with the s...

Embodiment 2

[0045] 1. Preparatory work: adopt the same method as in Example 1 to sputter a thin film of silver with a thickness of 100 nm on the ITO conductive glass substrate.

[0046] 2. Reaction steps: Control the reaction conditions, that is, keep the temperature at 22°C and keep the relative humidity at 40%. Put the above-mentioned ITO conductive glass covered with a simple silver film layer directly into the UV-O 3 The reactor is UV-O 3 Washing machine, by UV-O 3 The reactor is UV-O 3 The air inlet of the cleaning machine feeds 5L of oxygen into the reactor, and then the UV-O 3 The inlet and outlet of the reactor are sealed. After 80 minutes of reaction, the sample was taken out, and the obtained product was a brown-gray film. The obtained ITO conductive glass with silver oxide film is put into a desiccator for preservation. image 3 SEM photographs of the obtained samples. Figure 4 The XRD pattern of the obtained sample is obtained through XRD characterization: the AgO semic...

Embodiment 3

[0048] 1. Preparatory work: adopt the same method as in Example 1, sputter a thin film of simple silver with a thickness of 100 nm on the ITO conductive glass substrate.

[0049] 2. Reaction steps: Control the reaction conditions, that is, keep the temperature at 22°C and keep the relative humidity at 50%. Put the above-mentioned ITO conductive glass covered with a simple silver film layer directly into the UV-O 3 The reactor is UV-O 3 Washing machine, by UV-O 3 The reactor is UV-O 3 The air inlet of the washing machine is fed into the reactor with oxygen, and then the air inlet and the air outlet of the reactor are sealed, and the sample is taken out after 80 minutes of reaction, and the obtained product is a brown-gray film. The obtained ITO conductive glass with silver oxide film is put into a desiccator for preservation. Figure 5 SEM photographs of the obtained samples. Figure 6 It is the XRD figure of gained sample, obtains through XRD characterization: what the pre...

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Abstract

The invention relates to a method for synthesizing a silver oxide semiconductor thin-film material through room temperature in-situ control. The method is characterized by comprising the following steps: putting a substrate material, the surface of which is covered by an elementary substance silver thin film, in a UV-03 reactor, maintaining the relative humidity of a system to 30-90%, and reacting for 1-2 hours at the temperature of 10-40 DEG C under the condition of oxygen or air existence so as to obtain the AgxO(AgO or Ag2O) semiconductor thin-film material on the surface of a substrate in situ, wherein the UV-03 reactor is a UV-03 cleaning machine. According to the method, solvents, surface active agents or other chemical additives are not needed in a reaction process. The method is simple to operate and low in energy consumption and preparation cost and has wide industrial application prospect.

Description

technical field [0001] The invention belongs to the technical field of material chemistry, and in particular relates to a method for synthesizing silver oxide semiconductor film materials under in situ control at room temperature. Background technique [0002] There are many kinds of oxides of group IB metal silver, including Ag 2 O, Ag 2 o 3 , Ag 3 o 4 , AgO, etc., where Ag 2 The thermal properties of O are the most stable, and the critical temperature of its thermal decomposition is around 200-400 °C. It is a p-type direct bandgap semiconductor material with unique optical and electrical properties; the material has a wide spectral absorption range, which can extend from the ultraviolet region to the infrared region, and is a potential solar cell material. At present, the material has been reported to be applied in optical storage, magneto-optical storage, photography, detector, battery electrode and so on. AgO is a mixed valence compound Ag I Ag III o 2 , isomor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C8/12C23C14/22C23C14/14
Inventor 郑直魏杰雷岩贾会敏王捷葛素香
Owner XUCHANG UNIV
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