Preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film

A technology of sodium bismuth titanate and barium titanate, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, circuits, etc., can solve the incompatibility of semiconductor preparation processes , complex aerosol deposition process, affecting film quality and other issues, to achieve the effect of increasing thickness, increasing density, and increasing deposition rate

Inactive Publication Date: 2014-04-09
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, the main techniques for preparing thick films include screen printing process, casting process, electrophoretic deposition process, aerosol deposition process, etc. However, the screen printing process requires a high sintering temperature and usually uses a glass phase. The semiconductor preparation process is incompatible, the change of sol concentration and electrode reaction in the electrophoretic deposition process affect the film quality, and the aerosol deposition process is complicated

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  • Preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film
  • Preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film
  • Preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film

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Embodiment 1

[0047] A preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film includes the following steps:

[0048] 1) According to (1-x)Bi 0.5 Na 0.5 TiO 3 -xBaTiO 3 (Where x=0,0.05,0.06,0.07) the stoichiometric ratio, using barium carbonate, sodium carbonate, titanium dioxide and bismuth oxide as raw materials, mixed wet milling for 7 hours, and dried at 80°C for 6 hours to obtain a uniformly mixed raw material , And then compressed with a diameter of 45mm, and sintered at 800 ℃ for 4 hours to obtain bismuth sodium titanate-barium titanate with perovskite structure (abbreviated as BNT, BNT-0.05BT, BNT-0.06BT, BNT-0.07 BT) The blanks, which are respectively subjected to ordinary planetary ball milling for 7 hours, to obtain micro-nano-level BNT, BNT-0.05BT, BNT-0.06BT, and BNT-0.07BT powders;

[0049] 2) According to Bi 0.5 Na 0.5 TiO 3 Add tetra-n-butyl titanate solution and sodium acetate solution dropwise to the bismuth nitrate solution an...

Embodiment 2

[0056] A preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film includes the following steps:

[0057] 1) According to (1-x)Bi 0.5 Na 0.5 TiO 3 -xBaTiO 3 (Where x=0,0.05,0.06,0.07) the stoichiometric ratio, using barium carbonate, sodium carbonate, titanium dioxide and bismuth oxide as raw materials, mixed wet milling for 7 hours, and dried at 80°C for 6 hours to obtain a uniformly mixed raw material , And then compressed with a diameter of 45mm, and sintered at 800 ℃ for 4 hours to obtain bismuth sodium titanate-barium titanate with perovskite structure (abbreviated as BNT, BNT-0.05BT, BNT-0.06BT, BNT-0.07 BT) The blanks, which are respectively subjected to ordinary planetary ball milling for 7 hours, to obtain micro-nano-level BNT, BNT-0.05BT, BNT-0.06BT, and BNT-0.07BT powders;

[0058] 2) According to Bi 0.5 Na 0.5 TiO 3 The stoichiometric ratio of tetra-n-butyl titanate and sodium acetate solution were added dropwise to the b...

Embodiment 3

[0065] A preparation method of bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film includes the following steps:

[0066] 1) According to (1-x)Bi 0.5 Na 0.5 TiO 3 -xBaTiO 3 (Where x=0,0.05,0.06,0.07) the stoichiometric ratio, using barium carbonate, sodium carbonate, titanium dioxide and bismuth oxide as raw materials, mixed wet milling for 7 hours, and dried at 80°C for 6 hours to obtain a uniformly mixed raw material , And then compressed with a diameter of 45mm, and sintered at 800 ℃ for 4 hours to obtain bismuth sodium titanate-barium titanate with perovskite structure (abbreviated as BNT, BNT-0.05BT, BNT-0.06BT, BNT-0.07 BT) The blanks, which are respectively subjected to ordinary planetary ball milling for 7 hours, to obtain micro-nano-level BNT, BNT-0.05BT, BNT-0.06BT, and BNT-0.07BT powders;

[0067] 2) According to Bi 0.5 Na 0.5 TiO 3 The stoichiometric ratio of tetra-n-butyl titanate and sodium acetate solution were added dropwise to the b...

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Abstract

The invention discloses a preparation method of a bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film and belongs to the technical field of the preparation of piezoelectric materials. The preparation method includes the following steps: 1) preparing a micro-nano bismuth sodium titanate-barium titanate powder according to a stoichiometric ratio of (1-x) Bi0.5Na0.5TiO3-xBaTiO3; 2) preparing a sodium bismuth titanate precursor sol according to a stoichiometric ratio of Bi0.5Na0.5TiO3; 3) dispersing the bismuth sodium titanate-barium titanate powder in the sodium bismuth titanate precursor sol to prepare a mixed slurry; 4) conducting spin coating deposition of the bismuth sodium titanate precursor sol, heat treatment, spin coating deposition of the mixed slurry and heat treatment, so as to prepare a single-layer composite film; and 5) repeating the step 4) to prepare the sodium bismuth titanate-barium titanate lead-free composite piezoelectric thick film with thickness of 1-20 mum. The invention makes improvement to the existing sol gel technology, has the advanategs of low process cost, flexible film thickness and good repeatability, and breaks the critical thickness restriction of the ordinary sol-gel technology.

Description

Technical field [0001] The invention belongs to the technical field of piezoelectric material preparation, and relates to a method for preparing a piezoelectric thick film, in particular to a method for preparing a bismuth sodium titanate-barium titanate lead-free composite piezoelectric thick film. Background technique [0002] The piezoelectric thick film (1-100 microns) material is a material between thin film (less than 1 micron) and bulk (millimeter level). The devices made by it not only take into account the low working voltage of thin film materials, but also high frequency of use. It has the advantages of being compatible with semiconductor integrated circuits and membrane integrated circuits, and has excellent electrical properties similar to bulk material devices. It is widely used in transducers, sensors, micro-mechanical electronic systems (MEMS), micro-motors and micro-drives, etc. . [0003] At present, the application of piezoelectric thick film materials and thick...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/475C04B35/622H01L41/39H01L41/187
Inventor 任巍赵金燕纪红芬史鹏吴小清王玲艳
Owner XI AN JIAOTONG UNIV
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