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Manufacturing method of uncooled infrared focal plane array pixel using silicon germanium thin film

An uncooled infrared and focal plane array technology is applied in the field of infrared imaging device manufacturing to achieve the effects of low intrinsic noise, high TCR value and good performance

Active Publication Date: 2016-03-02
NANJING UNIV OF SCI & TECH
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for manufacturing an uncooled infrared focal plane array pixel using a quantum well type silicon germanium thin film material, so as to solve the engineering application problem of quantum well materials with excellent performance in the field of uncooled infrared focal plane manufacturing

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  • Manufacturing method of uncooled infrared focal plane array pixel using silicon germanium thin film
  • Manufacturing method of uncooled infrared focal plane array pixel using silicon germanium thin film
  • Manufacturing method of uncooled infrared focal plane array pixel using silicon germanium thin film

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Embodiment Construction

[0037] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0038] Combine Figure 4 The present invention is an uncooled infrared focal plane manufacturing method using silicon germanium film. Now, taking 40×40μm pixel as an example, briefly describe the array manufacturing process:

[0039] Step 1: Use SOI (Silicon-On-Insulator, silicon on insulating substrate) wafer as the carrier of quantum well silicon germanium film 043, and apply bonding glue on the surface of the wafer to form a bond with a thickness of 1μm-3μm The adhesive layer 048 is then bonded to the SOI wafer and the CMOS readout circuit 047 by hot-press adhesive bonding, and then the SOI wafer silicon substrate 041 is etched off using an ICP etching machine, and then BOE solution (Buffered Oxide Etch , Prepared by hydrofluoric acid and ammonium fluoride solution in a certain volume ratio, the common ratio is 6:1) or BHF solution (dilute hydrofluoric acid so...

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Abstract

The invention discloses a method for manufacturing an uncooled infrared focal plane array pixel with a silicon-germanium film. The method includes the steps of transferring the silicon-germanium film to a CMOS wafer from an SOI wafer, etching the silicon-germanium film to form a channel, forming a metal top electrode with a lift-off method, etching the silicon-germanium film to form a sensitive block, depositing a silicon nitride supporting film with a PECVD method, carrying out electroplating to grow metal electrode columns, sputtering TiW to form a circuit, sputtering an infrared absorption layer, etching a silicon nitride layer, a TiW layer and the like, forming an L-shaped cantilever beam and the like. According to the method, silicon-germanium / silicon quantum well materials are successfully applied to the field of micrometering bolometers, and the range of sensitive materials capable of being used for making an uncooled infrared focal plane is expanded; it is considered that the silicon-germanium / silicon quantum well materials are three-dimensional electric conducting materials, a U-shaped loop is formed in the mode of etching the channel, and the resistance of the sensitive area is improved; the silicon nitrogen film is introduced, a lambda / 4 resonance infrared absorption cavity is formed in the sensitive area, the size of the infrared absorption cavity is accurately controlled, and the infrared absorption rate is effectively improved.

Description

Technical field [0001] The invention belongs to the application of microelectronic processing technology in the field of infrared imaging device manufacturing, and is a method for manufacturing uncooled infrared focal plane array pixels using TCR (temperature coefficient of resistance) silicon germanium quantum well materials as sensitive materials. Background technique [0002] Infrared imaging technology has a wide range of applications and needs in the military and civilian fields. Infrared imaging reflects the information of heat radiation on the surface of an object and its internal heat dissipation. It is an extension of people's vision beyond the range of visible light, and it is a new way to observe and perceive the objective world. With the breakthrough of infrared sensitive material technology and the rapid development and maturity of MEMS manufacturing technology, miniature bolometers have been widely used in military and civilian fields, such as thermal imaging camera...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L27/146
CPCH01L31/035254H01L31/035281H01L31/1804Y02P70/50
Inventor 何勇苏岩方中董涛王开鹰杨朝初
Owner NANJING UNIV OF SCI & TECH
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