Photochemical preparation method of a semiconductor/graphene oxide hollow sphere composite photocatalyst

A photocatalyst and semiconductor technology, applied in the direction of catalyst activation/preparation, physical/chemical process catalysts, chemical instruments and methods, etc., can solve problems affecting performance, etc., and achieve low cost, good application prospects, and excellent photocatalytic performance.

Active Publication Date: 2016-04-27
SOUTH CHINA NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, during the use of graphene / graphene oxide, graphene is usually dispersed in the solution system, and it is inevitable that there will be partial agglomeration, covering some of its functional groups, and affecting its performance.
Not only that, the current problem of nanoparticle agglomeration is also the bottleneck of the development of nanomaterials

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  • Photochemical preparation method of a semiconductor/graphene oxide hollow sphere composite photocatalyst
  • Photochemical preparation method of a semiconductor/graphene oxide hollow sphere composite photocatalyst

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preparation example Construction

[0027] A photochemical preparation method of semiconductor / graphene oxide hollow sphere composite photocatalyst, comprising the following steps:

[0028] 1) Mix the soluble salt of the semiconductor photocatalyst, sodium thiosulfate, and water evenly to make a precursor solution;

[0029] 2) Add graphite oxide into water and ultrasonically obtain a graphene oxide dispersion;

[0030] 3) adding polymer microspheres to the above graphene oxide dispersion, and fully mixing and dispersing to obtain a mixed dispersion system containing polymer microspheres;

[0031] 4) Add the mixed dispersion system containing polymer microspheres obtained in the previous step to the precursor solution obtained in step 1), and stir to obtain a mixed solution;

[0032] 5) Transfer the mixed solution and place it under the ultraviolet light source for sufficient irradiation to form a precipitate;

[0033] 6) Fully soak the obtained precipitate with an organic solvent to obtain an insoluble solid; ...

Embodiment 1

[0046] A photochemical preparation method of a semiconductor / graphene oxide hollow sphere composite photocatalyst, comprising the steps of:

[0047] 1) Dissolve 2g of cadmium sulfate and 2g of sodium thiosulfate in 50ml of deionized water and stir magnetically for 30 minutes to obtain the precursor solution;

[0048] 2) Add 10 mg of graphite oxide into deionized water, and ultrasonically peel off the graphite oxide for 30 minutes to obtain a graphene oxide dispersion; in the graphene oxide dispersion, the mass percentage of graphene oxide is 0.03%;

[0049] 3) Add polystyrene microspheres to the above-mentioned graphene oxide dispersion and sonicate for 5 minutes to obtain a graphene oxide-coated sphere solution. In the graphene oxide-coated sphere solution, the mass concentration of polystyrene microspheres is 0.5%;

[0050] 4) Add the solution obtained in the previous step to the precursor solution, add water to a total volume of 100ml, and stir magnetically for 30 minutes ...

Embodiment 2

[0055] A photochemical preparation method of a semiconductor / graphene oxide hollow sphere composite photocatalyst, comprising the steps of:

[0056] 1) Dissolve 2g of copper sulfate and 4g of sodium thiosulfate in 100ml of deionized water and stir magnetically for 30 minutes to obtain the precursor solution;

[0057] 2) Add 8 mg of graphite oxide into deionized water, and ultrasonically peel the graphite oxide for 30 minutes to obtain a graphene oxide dispersion; in the graphene oxide dispersion, the mass percentage of graphene oxide is 0.03%;

[0058] 3) Add the cross-linked styrene / acrylamide copolymer microspheres to the above-mentioned graphene oxide dispersion and sonicate for 10 minutes to obtain a graphene oxide-coated sphere solution. In the graphene oxide-coated sphere solution, cross-linked benzene The mass concentration of ethylene / acrylamide copolymerized microspheres is 0.05%;

[0059] 4) Add the solution obtained in the previous step to the precursor solution, add...

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Abstract

The invention discloses a photochemical preparation method of a semiconductor / graphene oxide hollow sphere composite photocatalyst, comprising the steps of: 1) uniformly mixing the soluble salt of the semiconductor photocatalyst, sodium thiosulfate, and water to form a precursor solution; 2) ) adding graphite oxide into water and ultrasonicating to obtain a graphene oxide dispersion; 3) adding polymer microspheres to the above graphene oxide dispersion, and fully mixing and dispersing to obtain a mixed dispersion system containing polymer microspheres; 4) Add the mixed dispersion system containing polymer microspheres to the precursor solution and stir to obtain a mixed solution; 5) transfer the mixed solution to an ultraviolet light source for sufficient irradiation to form a precipitate; 6) use the organic The solvent is fully soaked to obtain an insoluble solid; 7) The insoluble solid is taken out, washed, dried, and ground to obtain a product.

Description

technical field [0001] The invention relates to a photochemical preparation method of a semiconductor / graphene oxide hollow sphere composite photocatalyst. Background technique [0002] The development of photosynthetic technology has been very rapid in recent years, and it has been applied on a large scale in many fields, and has a growing momentum. In chemical synthesis, photochemistry is more selective and specific than thermochemistry, and the photochemical synthesis method is simple, cheap, environmentally friendly, and has better operability and practicability. [0003] Photocatalytic technology is a treatment technology that does not affect the environment. It has the characteristics of simple process, low energy consumption, easy control of operating conditions and thorough degradation of pollutants. It is suitable for the treatment of various wastewater and waste dyes, etc. It is considered to have Environmentally friendly new technologies with good development pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/06B01J23/72B01J35/08B01J37/34
Inventor 孙丰强左燕冰许适溥黄志坚陈禾
Owner SOUTH CHINA NORMAL UNIVERSITY
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