Organic electroluminescence device with multi-layer metal composite electrode
A technology of electroluminescent devices and composite electrodes, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of high-cost organic electroluminescent devices, and achieve easy promotion, simple manufacturing process, and high application value Effect
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[0031] (2) Preparation of anode.
[0032] If the anode is a conventional single-layer anode structure, its material can be an inorganic material or an organic conductive polymer, and the inorganic material is one of indium tin oxide, zinc oxide and tin oxide, or one of gold, copper, silver and zinc The organic conductive polymer is polythiophene, sodium polyethylene benzene sulfonate or polyaniline, which can be prepared by vacuum evaporation or magnetron sputtering.
[0033] If the anode is a multilayer metal composite electrode structure, such as figure 1 As shown in the structure, the first optical adjustment layer 2, the first metal reflection layer 3, the second optical adjustment layer 4 and the anode metal electrode layer 5 are sequentially formed on the substrate 1 during preparation, and the material of the optical adjustment layer can be Organic electroluminescent devices commonly used organic semiconductor materials such as 8-hydroxyquinoline aluminum (Alq 3 ) or ...
Embodiment 1
[0043] refer to figure 2 , the organic electroluminescent device in this embodiment is a bottom-emitting organic electroluminescent device, and its specific structure from bottom to top is: glass substrate 13, ITO (100nm) 14, Ag (20 nm) / MoO 3 (1 nm) 15 (indicates that 20nm Ag is prepared first, and then 1nm MoO is prepared 3 ), NPB (60 nm) 16, Alq 3 (60 nm) 17, LiF (1 nm) / Al (3 nm) / Ag (18 nm) 18, Alq 3 (110 nm) 19, Al (150 nm) 20. The cathode in this embodiment is composed of LiF (1 nm) / Al (3 nm) / Ag (18 nm) 18, Alq 3 (110 nm) 19 and Al (150 nm) 20 multilayer metal composite electrode structure.
[0044] The specific preparation method of the device in this embodiment is as follows:
[0045] (1) Preparation of the anode: The transparent conductive glass substrate 13 was ultrasonically cleaned with deionized water, acetone and ethanol solutions, and then the glass substrate 13 was dried under an infrared lamp. Fabricate indium tin oxide (Indium Tin Oxide, ITO) thin fi...
Embodiment 2
[0052] refer to Figure 5 , the organic electroluminescent device in this embodiment is a top-emitting organic electroluminescent device, and its specific structure from bottom to top is: silicon wafer 21, Al (150 nm) 22, Alq 3 (90 nm) 23, Ag (20 nm) / MoO 3 (1 nm) 24, m-MTDATA (40 nm) 25, NPB (40 nm) 26, Alq 3 (60 nm) 27, LiF (1 nm) / Al (3 nm) / Ag (18 nm) 28 and Alq 3 (40 nm) 29. The anode in this embodiment is composed of Al (150 nm) 22, Alq 3 (90 nm) 23 and Ag (20 nm) / MoO 3 (1 nm) 24 multilayer metal composite electrode structure.
[0053] The specific preparation method of the device in this embodiment is as follows:
[0054] (1) Preparation of the multi-layer metal composite anode: the silicon wafer 21 was ultrasonically cleaned with deionized water, acetone and ethanol solutions successively, and then the silicon wafer 21 was dried under an infrared lamp. Utilize the method for vacuum thermal evaporation on the silicon chip 21 surface, at 1 * 10 -3 A 150 nm Al ...
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