Copper alloy for electronic devices, method of manufacturing copper alloy for electronic devices, copper alloy plastic working material for electronic devices, and component for electronic devices

A technology of electronic equipment and plastic processing, applied in the direction of conductive materials, conductive materials, cable/conductor manufacturing, etc., can solve the problems of electronic equipment components that cannot be shaped, high tensile elastic modulus, and easy to crack, etc., to achieve excellent Effects of bending workability, low tensile modulus, and high conductivity

Inactive Publication Date: 2014-06-04
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] However, in the Corson copper-nickel-silicon alloy disclosed in Patent Document 1, the tensile elastic modulus is relatively high at 126 to 135 GPa
Among them, in a connector with a structure in which the tab pushes up the spring contact part of the female terminal and is inserted, if the tensile modulus of the material constituting the connector is high, there may be a sharp change in the contact pressure during insertion. , and it is easy to deform plastically beyond the elastic limit, so it is not preferred
[0012] In addition, in the Cu-Mg alloys described in Non-Patent Document 2 and Patent Document 2, an intermetallic compound composed of Cu and Mg is precipitated, so there is a tendency for the tensile elastic modulus to be high. not preferred
[0013] In addition, there are many coarse intermetallic compounds composed of Cu and Mg dispersed in the matrix, so cracks are likely to occur starting from these intermetallic compounds during bending, so there is a problem that components for electronic devices with complex shapes cannot be molded

Method used

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  • Copper alloy for electronic devices, method of manufacturing copper alloy for electronic devices, copper alloy plastic working material for electronic devices, and component for electronic devices
  • Copper alloy for electronic devices, method of manufacturing copper alloy for electronic devices, copper alloy plastic working material for electronic devices, and component for electronic devices
  • Copper alloy for electronic devices, method of manufacturing copper alloy for electronic devices, copper alloy plastic working material for electronic devices, and component for electronic devices

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Embodiment

[0126] Hereinafter, the results of confirmation experiments conducted to confirm the effects of the present invention will be described.

[0127] A copper raw material composed of oxygen-free copper (ASTM B152C10100) with a purity of 99.99% by mass or higher was prepared, and the copper raw material was placed in a high-purity graphite crucible and subjected to high-frequency melting in an atmosphere furnace set to an Ar gas atmosphere. Various additive elements were added to the obtained molten copper to prepare the component compositions shown in Tables 1 and 2, and cast into carbon molds to produce ingots. In addition, the size of the ingot was about 20 mm in thickness×about 20 mm in width×about 100 to 120 mm in length.

[0128] The obtained ingot was subjected to a heating step of heating under the temperature conditions described in Tables 1 and 2 in an Ar gas atmosphere for 4 hours, and then water quenched.

[0129] The heat-treated ingot is cut, and subjected to surfac...

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Abstract

Provided is a copper alloy for electronic devices which has a low Young's modulus, high proof stress, high conductivity and excellent bending workability, and which is suitable for electronic device components such as terminals, connectors, relays, and lead frames; also provided are a method of manufacturing the copper alloy for electronic devices, a copper alloy plastic working material for electronic devices, and a component for electronic devices. This copper alloy contains 3.3-6.9 atom% Mg, the rest being substantially Cu and unavoidable impurities. Setting X to the Mg concentration in atom%, the conductivity sigma (%IACS) is in the range sigma @ {1.7241 / (-0.0347X2 + 0.6569X + 1.7)} 100, and the average crystal particle diameter is in the range 1-100mum. Further, after intermediate heat treatment, the average crystal particle diameter in the copper material before finish processing is in the range 1-100mum.

Description

technical field [0001] The present invention relates to a copper alloy for electronic equipment, a method for producing a copper alloy for electronic equipment, a copper alloy plastic processing material for electronic equipment, and a copper alloy for electronic equipment suitable for components such as terminals such as connectors and components for electronic equipment such as relays and lead frames. components. [0002] This application claims priority based on Japanese Patent Application No. 2011-243869 for which it applied in Japan on November 7, 2011, and uses the content for this specification. Background technique [0003] Conventionally, along with miniaturization of electronic equipment and electric equipment, etc., terminals for such electronic equipment, such as connectors, relays, and components for electronic equipment such as lead frames have been sought to be miniaturized and thinned. Therefore, copper alloys excellent in elasticity, strength, and electrica...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00B21B3/00C22F1/08H01B1/02H01B5/02H01B13/00C22F1/00
CPCH01B13/00C22F1/08H01B1/026C22F1/00B21B3/00H01B5/02C22C9/00
Inventor 伊藤优树牧一诚
Owner MITSUBISHI MATERIALS CORP
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