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Two-dimensional semiconductor template material and its preparation method

A two-dimensional semiconductor and template technology, which is applied in the field of semiconductor template materials and its preparation, can solve the problems of strict operating conditions, complex equipment and cumbersome steps, etc., and achieve the effect of low cost, excellent performance and simple process

Inactive Publication Date: 2016-04-06
YANSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the corresponding equipment of this method is relatively complicated, the operating conditions are strict, and the steps are cumbersome, which increases the cost of preparation.

Method used

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  • Two-dimensional semiconductor template material and its preparation method

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Effect test

Embodiment 1

[0014] The present invention provides a two-dimensional semiconductor template material and a preparation method thereof. The steps are as follows:

[0015] (1) Raw material Ti 3 SiC 2 Preparation: Take 144g of titanium powder, 28g of silicon powder, and 24g of carbon powder, use 196g of absolute ethanol as the grinding medium, and 588g of agate beads as the grinding body, put them in a polyurethane tank, rotate at 500r / min, mix evenly for 24h, and place Dry in a vacuum drying oven for 60 hours. Load the uniformly mixed raw materials into a high-strength graphite mold with an inner diameter of 20 mm and an outer diameter of 50 mm, and preload with a jack (the pressure is 20 MPa). When sintering, use 99.9% argon protection, the sintering pressure is 30MPa, the sintering temperature is 1500℃, and the heat preservation is 3h. After the heat preservation, the power is turned off and the furnace is cooled to obtain a sintered body with a diameter of 20mm and a thickness of about 10mm....

Embodiment 2

[0019] (1) Raw material Ti 2 Preparation of AlN: Take 48g of titanium powder, 62g of titanium nitride powder, and 27g of aluminum powder, use 137g of absolute ethanol as the grinding medium, and 411g of agate beads as the grinding body, put them in a polyurethane tank, rotate at 500r / min, and mix evenly for 24h , Placed in a vacuum drying oven, dried for 60h. Load the uniformly mixed raw materials into a high-strength graphite mold with an inner diameter of 20 mm and an outer diameter of 50 mm, and preload with a jack (the pressure is 20 MPa). When sintering, use 99.9% argon protection, the sintering pressure is 30MPa, the sintering temperature is 1600℃, and the heat preservation is 2h. After the heat preservation, the power is turned off and the furnace is cooled to obtain a sintered body with a diameter of 20mm and a thickness of about 10mm. Grind in an agate mortar, and sieve through a 3000-mesh sieve to select raw material powder with a particle size of 5 μm or less.

[0020...

Embodiment 3

[0023] (1) Raw material Sc 3 LiC 2 Preparation: Take 135g of scandium powder, 7g of lithium powder, and 24g of carbon powder, use 166g of absolute ethanol as the grinding medium, and 498g of agate beads as the grinding body, put them in a polyurethane tank, rotate at 500r / min, mix evenly for 24h, and place Dry in a vacuum drying oven for 60 hours. Load the uniformly mixed raw materials into a high-strength graphite mold with an inner diameter of 20 mm and an outer diameter of 50 mm, and preload with a jack (the pressure is 20 MPa). Use 99.9% argon protection during sintering, the sintering pressure is 30MPa, the sintering temperature is 1400℃, and the heat preservation is 3h. After the heat preservation is completed, the power is turned off and the furnace is cooled to obtain a sintered body with a diameter of 20mm and a thickness of about 10mm. Grind in an agate mortar, and sieve through a 3000-mesh sieve to select raw material powder with a particle size of 5 μm or less.

[00...

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Abstract

The invention discloses a two-dimensional semiconductor template material with chemical formula of Mn+1Xn(OH)n, wherein M is Sc, Ti or Zr; X is B, C or N; n is 1 or 2; the raw material is Mn+1AXn; A is Li, Na, Al, Si or K. A preparation method of the two-dimensional semiconductor template material comprises the following steps: carrying out ball-milling treatment after sintering raw materials, thereby obtaining raw material powder of which the particle size is equal to or smaller than 5microns; soaking the raw material powder in a 40-60wt% HF solution at a constant temperature for 8-10 hours; electromagnetically agitating, and simultaneously carrying out ultrasonic treatment on the soaking solution for 60-80 minutes by using an ultrasonic wave; finally, cleaning by respectively using 5wt% NaOH and deionized water until the PH value of the raw material is equal to 7; centrifugally drying to obtain the two-dimensional semiconductor template material in the Mn+1Xn(OH)n. The preparation method is simple in process and equipment, and good in repeatability, the obtained two-dimensional semiconductor template material is good in delaminating and peeling effects, and has high specific surface area and an adjustable energy-band structure.

Description

Technical field [0001] The invention relates to a semiconductor template material and a preparation method thereof. Background technique [0002] Two-dimensional atomic crystals represented by graphene are a new class of materials. Graphene materials have excellent performance characteristics such as high intrinsic carrier ion mobility, high strong field drift rate, high current carrying capacity, and high in-plane thermal conductivity. The field of materials science and condensed matter physics is the most rapidly developing and active research front. However, the zero-bandwidth and semi-metallic properties of graphene hinder its application in the field of semiconductor devices. Therefore, other graphene-like two-dimensional materials, such as molybdenum disulfide, molybdenum oxide, boron nitride, two-dimensional boron monolayer, Two-dimensional Ga family layered materials have attracted great attention in the current materials, physics and chemistry fields. [0003] The prepar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G1/00
Inventor 彭秋明张庆瑞付辉
Owner YANSHAN UNIV