Niobium alloy target material and preparation method thereof

A niobium alloy and target material technology, which is applied in the target material field, can solve the problems of difficult control of thin film deposition thickness uniformity and low target material utilization rate, and achieve the effects of good surface quality, small internal grains and good lubrication effect

Active Publication Date: 2014-06-18
NINGXIA ORIENT TANTALUM IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Cuboid, cube and cylinder shaped targets are solid. During the sputtering process, circular permanent magnets establish a circular magnetic field on the surface of the target and form an etching area on the circu

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0028] The embodiment of the invention discloses a preparation method of a niobium alloy target material, which comprises the following steps:

[0029] a) Preheat the niobium alloy tube blank, and smear glass powder on the surface of the preheated niobium alloy tube blank;

[0030] b) subjecting the niobium alloy tube blank obtained in step a) to hot extrusion, pickling the niobium alloy tube blank after the hot extrusion, and subjecting the pickled niobium alloy tube blank to heat treatment;

[0031] c) Use the first tool to boring and mill the inner hole of the niobium alloy tube blank obtained in step b) to obtain a niobium alloy target; the tool head of the first tool is a double tool head or a single tool head, and the first tool The length of the cutter bar is greater than 5000 mm, the double cutter heads are arranged in the axial direction at the working end of the cutter bar, and the blade inclination angle of the cutter head is a negative value.

[0032] The niobium alloy tar...

Example Embodiment

[0056] Example 1

[0057] Step 1. A niobium-10 zirconium ingot with a diameter of Φ290 and a length of 550mm obtained through horizontal furnace smelting and electron beam furnace smelting twice, and an ingot with a chemical composition of ≥99.95%;

[0058] Step 2. Preheat the niobium 10 zirconium ingot described in step 1 to 200 ℃, apply glass powder, heat the ingot to 560 ℃, keep the temperature for 3 hours, axially upset the niobium 10 zirconium ingot to 300 mm, and stretch it to 280×280×465mm;

[0059] Step 3: Pickling the niobium 10 zirconium ingots obtained in step 2, the acid solution is HCl:HF:H 2 SO 4 =5:3:2 (volume ratio), the pickling time is 10 minutes, the surface impurities and glass powder are removed, and the metallic luster and no spots can be seen by naked eyes;

[0060] Step 4. Heat the niobium 10 zirconium ingot obtained in step 3: the heat treatment temperature is 1350 degrees, and the holding time is 60 minutes;

[0061] Step 5. Heat the niobium 10 zirconium ingot...

Example Embodiment

[0075] Example 2

[0076] Step 1. A niobium 53 titanium 47 ingot with a diameter of 290 mm and a length of 550 mm obtained by smelting twice in an electric arc furnace, and an ingot with a chemical composition of ≥99.95%;

[0077] Step 2: Preheat the niobium 53 titanium 47 ingot obtained in step 1 to 200°C, apply glass powder, and heat the ingot to 450°C for 3 hours. The axial upsetting of the niobium 53 titanium 47 ingot is 280mm, and the length is 285×285×Lmm;

[0078] Step three, pickling the niobium 53 titanium 47 ingots obtained in step two: HCl: HF: H 2 SO 4 =5:3:2 (volume ratio), the pickling time is 10 minutes, the surface impurities and glass powder are removed, and the metallic luster and no spots can be seen by naked eyes;

[0079] Step 4. Heat the niobium 53 titanium 47 ingots obtained in step 3: the heat treatment temperature is 1000°C, and the holding time is 60 minutes;

[0080] Step 5. Heat the niobium 53 titanium 47 ingots obtained in step 4 to 500°C, hold for 2.5 hour...

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Abstract

The invention provides a preparation method of a niobium alloy target material. The preparation method comprises the steps: firstly, carrying out hot extrusion of a niobium alloy tube blank, then carrying out inner hole processing of the niobium alloy tube blank after hot extrusion, and thus obtaining the niobium alloy target material. In the preparation process of the niobium alloy target material, firstly, the surface of the niobium alloy tube blank is coated with a glass powder; because the surface of the niobium alloy tube blank is spray-coated with the glass powder, the niobium alloy tube blank is allowed to have relatively good lubrication effect in the hot extrusion process, and thus the surface quality of the niobium alloy tube blank is relatively good; the subsequent hot extrusion processing and heat treatment are conducive to refinement and homogenization of crystal grains of the niobium alloy tube blank; and finally, the niobium alloy tube blank after hot extrusion is subjected to mechanical processing, and an inner hole of the niobium alloy tube blank is bored and milled by selected special tools, so that chip breaking can be allowed to be continuously discharged from the inner hole, the problem that chip breaking is accumulated in the inner hole to affect processing of the inner hole surface is avoided, and thus the niobium alloy target material with uniform and fine internal crystal grains and relatively low surface roughness value is obtained. The invention also provides the niobium alloy target material.

Description

technical field [0001] The invention relates to the technical field of target materials, in particular to a niobium alloy target material and a preparation method thereof. Background technique [0002] The target is the material used as the cathode in the sputtering deposition technique, which can be separated from the cathode in the form of molecules, atoms or ions under the impact of positively charged cations and redeposited on the surface of the anode. As a special electronic material with high added value, the target is widely used as a thin film material for sputtering cutting-edge technology. According to the application, the targets mainly include targets for the semiconductor field, targets for recording media, targets for display films, advanced touch screens and displays, optical targets and superconducting targets, etc. [0003] Magnetron sputtering is one of the main technologies for preparing thin film materials. It uses ion sources to generate ions, and the g...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14
CPCC23C14/34C23C14/14C23C14/3414
Inventor 李桂鹏汪凯张国军吴红张春恒李兆博任萍任晓郭从喜
Owner NINGXIA ORIENT TANTALUM IND
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