An organic electroluminescent device
An electroluminescence device and luminescence technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of high energy consumption in preparation, affect device efficiency, poor thermal stability, etc., and achieve high luminous efficiency and high luminescence The effect of purity and good thermal stability
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Embodiment 1
[0059] Synthesis of compound 1
[0060] Synthesis of intermediate bromophenazine
[0061]
[0062] Bromophenazine
[0063] N9, N10-diphenylphenanthrene-9,10-diamine (15g), p-bromoiodobenzene (11.77g), Cu(OTf)2 (2.52g) and K2CO3 (7.68g, 55.6mol ), followed by adding trichlorobenzene (50g), heated to about 210°C under mechanical stirring and refluxed overnight, after the reaction was complete, the heating was stopped, and the solvent was distilled off under reduced pressure. Silica gel column chromatography was used to obtain 4.02 g of a light yellow solid with a yield of 18.74%.
[0064] Synthesis of compound 1
[0065]
[0066] In the flask, add 4-bromophenazine (0.5g), (9-phenyl-9H-carbazol-3-yl) boric acid (0.4g,), THF (30ml), tetrakis (triphenylphosphine) Palladium (100 mg), potassium carbonate aqueous solution (2 mol / l, 20 mL), heated to reflux under nitrogen protection overnight. Stop the reaction, remove THF, extract three times with dichloromethane, combine t...
Embodiment 2
[0070] Preparation of OLED using compound 1 prepared in Example 1
[0071] First, the transparent conductive ITO glass substrate 110 (with anode 120 on it) (China CSG Group Co., Ltd.) was washed in sequence with deionized water, ethanol, acetone and deionized water, and then treated with oxygen plasma for 30 seconds.
[0072] Then, compound 1 was evaporated to form a hole transport layer 130 with a thickness of 60 nm.
[0073] Then, a 30nm thick compound Alq was evaporated on the hole transport layer 3 as the light emitting layer 140 .
[0074] Then, 20nm thick Alq was evaporated on the light-emitting layer 3 as the electron transport layer 150.
[0075] Finally, 1nm LiF was vapor-deposited as the electron injection layer 160 and 100nm Al as the cathode 170 of the device.
[0076] The prepared device was measured at 10mA / cm by PhotoResearchPR650 spectrometer 2 The efficiency at the current density is 1.09cd / A, 50mA / cm 2 The efficiency at the current density is 0.98cd / A, ...
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