Sodium doping method for CIGS-based thin film photovoltaic material

A thin-film photovoltaic and sodium-doped technology, which is applied in photovoltaic power generation, sustainable manufacturing/processing, electrical components, etc., can solve problems such as spots, affecting appearance, and weak bonding between Mo electrode layer and CIGS light-absorbing layer. achieve the effect of avoiding poisoning

Active Publication Date: 2014-07-09
厦门神科太阳能有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The main purpose of the present invention is to solve the problems in the prior art: during the alkali doping process of the CIGS light-absorbing layer, 1) the Mo electrode layer and the CIGS light-absorbing layer are not bonded firmly;

Method used

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  • Sodium doping method for CIGS-based thin film photovoltaic material
  • Sodium doping method for CIGS-based thin film photovoltaic material
  • Sodium doping method for CIGS-based thin film photovoltaic material

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Embodiment 1

[0028] On a substrate made of soda-lime glass, magnetron sputtering is used to deposit a 50nm silicon oxide film layer; then a metal molybdenum electrode layer of 800 nm is deposited on the silicon oxide film layer by magnetron sputtering; The sodium gallium alloy film layer and the copper indium gallium metal prefabricated layer are sequentially deposited by controlled sputtering, so that the total thickness of the gallium sodium alloy film layer and the copper indium gallium metal prefabricated layer is 1.2um, and gallium containing 70at%Ga and 30at%Na is used The sodium alloy target is sputtered to deposit the sodium gallium alloy film layer; then it is put into a heating furnace for selenization heat treatment, thereby forming a copper indium gallium diselenide sodium-containing optical absorption layer with a chalcopyrite structure; A 40nm CdS film was deposited on the absorber layer as a buffer layer by the chemical bath (CBD) method; a 40nm intrinsic ZnO film was deposit...

Embodiment 2

[0039] A 20nm titanium oxide film layer was deposited by magnetron sputtering on a substrate of soda lime glass; then a metal molybdenum electrode layer of 800nm ​​was deposited on the titanium oxide film layer by magnetron sputtering; The copper indium gallium metal prefabricated layer, the gallium sodium alloy film layer, and the copper indium gallium metal prefabricated layer are sequentially deposited by controlled sputtering, so that the total thickness of the gallium sodium alloy film layer and the copper indium gallium metal prefabricated layer is 1.2um, and the gallium-containing 80at% Ga and 20at% Na gallium sodium alloy target is sputtered to deposit gallium sodium alloy film layer; then it is put into a heating furnace for selenization heat treatment to form copper indium gallium diselenide containing sodium light with chalcopyrite structure Absorbing layer; a 40nm CdS film was deposited on the sodium-containing light absorbing layer by the chemical bath (CBD) method...

Embodiment 3

[0042] A 20nm zirconia film layer was deposited by magnetron sputtering on a substrate of soda lime glass; then a 50nm metal molybdenum electrode layer with tensile stress was deposited on the zirconia film layer by magnetron sputtering, and then deposited A layer of 500nm metal molybdenum electrode layer with compressive stress, the metal back electrode layer is composed of double-layer molybdenum electrode layers; then magnetron sputtering is used to sequentially deposit copper indium gallium metal prefabricated layer and gallium sodium alloy film on the metal back electrode layer layer, so that the total thickness of the sodium gallium alloy film layer and the copper indium gallium metal prefabricated layer is 1.2um, and the sodium gallium alloy film layer is deposited by sputtering with a sodium gallium alloy target material containing gallium 62at%Ga and 38at%Na; Put it into a heating furnace for selenization heat treatment to form a copper indium gallium diselenide sodium...

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Abstract

The invention discloses a sodium doping method for a CIGS-based thin film photovoltaic material. According to the method, a substrate, a barrier layer covering the surface of the substrate, a metal back electrode layer covering the barrier layer, a light absorption layer covering the metal back electrode layer, a buffering layer covering the light absorption layer and a transparent conductive window layer covering the buffering layer are included. Sodium doping is carried out on light absorption through the method of depositing Ga-Na alloy materials, heat treatment is carried out on the light absorption layer, and therefore the light absorption layer material containing sodium with the atomic ratio between copper and the sum of indium and gallium is 0.84-0.99 can be formed.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, and more specifically, the invention provides a method and structure for sodium doping of CIGS-based thin-film photovoltaic materials. Background technique [0002] With the global warming, the deterioration of the ecological environment and the shortage of conventional energy, more and more countries have begun to vigorously develop solar energy utilization technology. Solar photovoltaic power generation is a zero-emission clean energy, which has the advantages of safety, reliability, no noise, no pollution, inexhaustible resources, short construction period, and long service life, so it has attracted much attention. Copper indium gallium selenide (CIGS) is a P-type semiconductor material with a direct band gap, and its absorption coefficient is as high as 105 / cm. A 2um thick copper indium gallium selenide film can absorb more than 90% of sunlight. The band gap of the CIGS thin fi...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/18
CPCH01L31/0322Y02E10/541Y02P70/50
Inventor 李艺明田宏波
Owner 厦门神科太阳能有限公司
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