A method of producing transparent conductive film glass

Abstract

The invention discloses a method for producing transparent conductive film glass, which comprises the following steps: (1). In an annealing kiln, a gaseous shielding layer precursor containing silane and an oxygen source is used as a carrier with an inert gas, and the temperature is On the glass surface at 460-480 ℃, use the parallel incident laser beam to make the gaseous shielding layer precursor photodissociate and undergo a chemical gas phase reaction, and deposit a shielding layer with a thickness of 50-90nm on the glass surface; (2). After annealing In the kiln, the glass temperature is within the range of 435-455 °C, and the gaseous conductive layer precursor containing the prefabricated vaporized zinc source, aluminum source, and oxygen source is passed into the glass layer on which the shielding layer has been deposited. On the glass surface, the laser beam is incident in parallel to cause the photodissociation of the precursor of the gaseous conductive layer to undergo a chemical gas phase reaction, forming a conductive layer with a thickness of 250-400nm on the glass surface. The invention effectively reduces the temperature of the coating reaction, is beneficial to improving the quality of the film, improving the utilization rate of the precursor gas, and is beneficial to the stability of the working condition of the float line.

Description

technical field [0001] The invention belongs to the field of glass production and manufacturing, in particular to a method for producing transparent conductive film glass on a float line. Background technique [0002] The existing method of producing transparent conductive film glass on the float line is to pass the precursor gas containing the elements constituting the thin film to the hot glass surface. A composite film layer comprising a silicon oxide shielding layer and an oxide conductive layer is deposited in one step. This method must rely on the high temperature of the glass ribbon to drive the chemical reaction. It belongs to the chemical vapor phase reaction of the thermal decomposition mechanism. The coating area must be selected in the high temperature area of ​​the float line. Usually, the shielding layer is plated in the tin bath, and the conductive layer is plated in the tin bath. In the tin bath or at the front end of the annealing kiln. [0003] The existi...

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Problems solved by technology

[0003] The existing method has the following problems: the disturbance to the tin bath is large, resulting in unstable working conditions of the tin bath, increased energy consumption, and serious loss of tin liquid; high temperature in the coating area will cause the precursor gas in a large volume to be heated and reacted, which not only consumes energy It is very large, and the waste of precursor gas is serious, and the utilization rate is generally lower than 15%. The temperature of the coating area is higher than the softening point of the glass, and the film is prone to defects; the temperature of the coating area is too high, which will affect the material, deformation, cooling, and corrosion of the coating equipment. etc. have extremely high requirements, which makes the manufacturing of coating equipment difficult, high in cost and complicated in operation