Method for growing single-layer molybdenum disulfide by chemical vapor deposition

A single-layer molybdenum disulfide, chemical vapor deposition technology, applied in chemical instruments and methods, from chemically reactive gases, crystal growth, etc., can solve the problems of large area, low sample quality, poor repeatability, etc., to achieve high quality, good repeatability

Inactive Publication Date: 2014-07-30
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

Mechanical exfoliation can obtain a single layer of molybdenum disulfide that maintains its intrinsic properties to the greatest extent. The samples are mainly used for basic physics, chemistry, and application research, but they cannot be prepared in large quantities and have poor repeatability; lithium ion intercalation is generated by the reaction of lithium and water. The hydrogen gas overcomes the principle of van der Waals force between layers to obtain oligolayer molybdenum disulfide. The main disadvantage is that the prepared samples cannot maintain the intrinsic pr

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  • Method for growing single-layer molybdenum disulfide by chemical vapor deposition
  • Method for growing single-layer molybdenum disulfide by chemical vapor deposition
  • Method for growing single-layer molybdenum disulfide by chemical vapor deposition

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[0024] Example 1

[0025] The method for preparing a single-layer molybdenum disulfide by chemical vapor deposition includes the following steps:

[0026] ①Pretreatment of implanted seeds on the growth substrate: take a drop of 0.1mg / ml 3,4,9,10-perylenetetracarboxylic dianhydride or 3,4,9,10-perylenetetracarboxylic acid tetrapotassium salt Seed solution, drop on the surface of pure growth substrate (silicon wafer or quartz wafer with 300nm thick oxide layer); place the growth substrate on the spin coater, set the spin coater speed to 3000r / min, and spin coating time 3min. After the spin coating is finished, place the growth substrate in a vacuum drying box for use;

[0027] ② Pretreatment of precursors (sulfur powder and molybdenum oxide powder): weigh 20 mg of sulfur powder and 10 mg of molybdenum oxide powder, and place them in a vacuum drying oven at 60°C for 12 hours;

[0028] ③Put the precursor into the vacuum tube furnace and prepare for growth: disperse the molybdenum oxide u...

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Abstract

The invention relates to a method for growing single-layer molybdenum disulfide by chemical vapor deposition. The method comprises the steps of growing a substrate, pre-treating implanted seeds, pre-treating a precursor, carrying out ready growth, growing to obtain single-layer molybdenum disulfide monocrystal and a continuous molybdenum disulfide single-layer film, and the like. The single-layer molybdenum disulfide prepared by the method has the characteristics of high sample quality, large area, good reproducibility and the like.

Description

technical field [0001] The invention belongs to the field of preparation of novel two-dimensional nanometer materials, in particular to a method for growing single-layer molybdenum disulfide by chemical vapor deposition. technical background [0002] As a large class of graphene layered materials, transition metal chalcogenide compounds TMDC two-dimensional nanostructures represented by monolayer molybdenum disulfide have attracted widespread attention with the discovery of a number of excellent photoelectric properties and special physical phenomena. In the past two years, the research on the preparation, photoelectric properties and applications of this kind of materials is developing rapidly. The unique properties of monolayer molybdenum disulfide can be summarized as follows: [0003] 1) Monolayer molybdenum disulfide is a structure similar to sandwich S-Mo-S, which belongs to the hexagonal crystal system; [0004] 2) Bulk molybdenum disulfide is an indirect band gap s...

Claims

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Application Information

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IPC IPC(8): C23C16/30C23C16/44C30B25/02C30B29/46
Inventor 王俊李源鑫
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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