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A kind of method for preparing cerium oxide buffer layer by electrochemical deposition

A cerium oxide and buffer layer technology is applied in the field of electrochemical deposition to prepare cerium oxide buffer layers, which can solve problems such as unfavorable preparation of cerium oxide buffer layers, expensive and harsh reducing atmosphere for high-temperature preparation processes, and avoid the increase of crystal grains and cost. Inexpensive, effect of increasing adhesion

Active Publication Date: 2016-04-13
NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, when the deposition method is used to prepare the cerium oxide buffer layer, high temperature preparation process and expensive and harsh reducing atmosphere are required, which are not conducive to the large-scale preparation of the cerium oxide buffer layer on the metal substrate

Method used

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  • A kind of method for preparing cerium oxide buffer layer by electrochemical deposition
  • A kind of method for preparing cerium oxide buffer layer by electrochemical deposition
  • A kind of method for preparing cerium oxide buffer layer by electrochemical deposition

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Embodiment 1

[0026] The preparation method of the present embodiment comprises the following steps:

[0027] Step 1, dissolving 0.868g cerium nitrate hexahydrate in 200mL deionized water to prepare an electroplating solution with a cerium ion concentration of 0.01mol / L, then adding ammonium nitrate solution to adjust the pH value of the electroplating solution to 6;

[0028] Step 2. Place the nickel-tungsten alloy substrate in the electroplating solution after adjusting the pH value in step 1 as the cathode, use the graphite sheet as the anode, and adjust the current density of the DC power supply to 5mA / cm 2 , performing electroplating treatment on the nickel-tungsten alloy substrate at 25°C to form a cerium oxide electroplating layer on the surface of the nickel-tungsten alloy substrate; the electroplating treatment time is 10 minutes;

[0029] Step 3. Place the nickel-tungsten alloy substrate after electroplating in step 2 for annealing treatment in a tube furnace, and cool with the fur...

Embodiment 2

[0032] The preparation method of the present embodiment comprises the following steps:

[0033] Step 1, dissolving 0.434g cerium nitrate hexahydrate in 200mL deionized water to prepare an electroplating solution with a cerium ion concentration of 0.005mol / L, then adding ammonium nitrate solution to adjust the pH value of the electroplating solution to 7;

[0034] Step 2. Place the nickel-tungsten alloy substrate in the electroplating solution after adjusting the pH value in step 1 as the cathode, use the graphite sheet as the anode, and adjust the current density of the DC power supply to 3mA / cm 2 , performing electroplating treatment on the nickel-tungsten alloy substrate at 20°C to form a cerium oxide electroplating layer on the surface of the nickel-tungsten alloy substrate; the electroplating treatment time is 10 minutes;

[0035] Step 3. Place the nickel-tungsten alloy substrate after electroplating in step 2 for annealing treatment in a tube furnace, and cool with the fu...

Embodiment 3

[0038] The preparation method of the present embodiment comprises the following steps:

[0039] Step 1, dissolving 4.34g cerium nitrate hexahydrate in 200mL deionized water to prepare an electroplating solution with a cerium ion concentration of 0.05mol / L, then adding ammonium nitrate solution to adjust the pH of the electroplating solution to be 8;

[0040] Step 2. Place the nickel-tungsten alloy substrate in the electroplating solution after adjusting the pH value in step 1 as the cathode, use the graphite sheet as the anode, and adjust the current density of the DC power supply to 10mA / cm 2 , performing electroplating treatment on the nickel-tungsten alloy substrate at 25° C. to form a cerium oxide electroplating layer on the surface of the nickel-tungsten alloy substrate; the electroplating treatment time is 1 min;

[0041] Step 3. Place the nickel-tungsten alloy substrate after electroplating in step 2 for annealing treatment in a tube furnace, and cool with the furnace t...

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Abstract

The invention discloses a method for preparing a cerium oxide buffer layer by an electrochemical deposition. The method comprises the following steps of firstly, preparing an electroplating solution, adjusting pH value of the electroplating solution to be 6-8; secondly, placing the nickel-tungsten alloy substrate in the electroplating solution as a cathode, a graphite sheet as an anode, carrying out an electroplating treatment on the nickel-tungsten alloy substrate and forming a cerium oxide electroplating layer on the surface of the nickel-tungsten alloy substrate; and thirdly, placing the electroplated nickel-tungsten alloy substrate in a tube furnace for carrying out an annealing treatment to obtain a layer of cerium oxide buffer layer having a C-axis orientation on the surface of the electroplated nickel-tungsten alloy substrate. According to the method, the nucleation and growth of the cerium oxide on the nickel-tungsten alloy substrate are induced and controlled by an electrochemical deposition process and the high-quality crack-free cerium oxide buffer layer having a C-axis orientation can be obtained by annealing at a lower temperature. The method can completely avoid the metal substrate from oxidizing in the case that reducing atmosphere is not required and has the advantage of low cost and is suitable for large-scale production and application.

Description

technical field [0001] The invention belongs to the technical field of high-temperature superconducting materials, and in particular relates to a method for preparing a cerium oxide buffer layer by electrochemical deposition. Background technique [0002] Cerium oxide materials have attracted widespread attention due to their applications in superconducting materials, catalysts, fuel cells, optical devices, and oxygen sensors. On the one hand, cerium oxide has the characteristics of good thermal stability and chemical compatibility, so cerium oxide is easy to grow on metal substrates; on the other hand, due to the 2 The lattice mismatch with YBCO is small. In the coated conductor (metal substrate / buffer layer / superconducting layer), the cerium oxide buffer layer can be used as a connecting functional layer, and has a very important role in transmitting texture. [0003] There are many methods for preparing the cerium oxide buffer layer, among which physical vapor deposition...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D9/08
Inventor 金利华于泽铭冯建情王耀李成山张平祥
Owner NORTHWEST INSTITUTE FOR NON-FERROUS METAL RESEARCH