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Aluminum/iron-doped amorphous carbon film/aluminum nano-thin-film memory resistor storage device and manufacturing method thereof

A technology of memristor and amorphous carbon film, which is applied in the field of memory storage, can solve the problems of cumbersome preparation process and achieve the effects of strong repeatability, simple structure and fast reading and writing speed

Active Publication Date: 2014-08-13
HUAIYIN TEACHERS COLLEGE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the patented technology needs to be annealed and oxidized at high temperature for 5 hours to obtain copper oxide. The preparation process is cumbersome, and the excessive resistance of up to 100,000 ohms is formed, which is still far from practical application.

Method used

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  • Aluminum/iron-doped amorphous carbon film/aluminum nano-thin-film memory resistor storage device and manufacturing method thereof
  • Aluminum/iron-doped amorphous carbon film/aluminum nano-thin-film memory resistor storage device and manufacturing method thereof
  • Aluminum/iron-doped amorphous carbon film/aluminum nano-thin-film memory resistor storage device and manufacturing method thereof

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Embodiment Construction

[0022] Prototypes are made according to the above technical solutions. Take quartz glass (SiO 2 ) The substrate is used as the substrate, and the iron-doped amorphous carbon (a-C:Fe) film is prepared by the pulsed laser deposition method. The graphite with a purity of 99.99% and the metal Fe of 99.9% are used as the target source for the coating, and the metal Fe sheet is attached On the graphite target, during operation, uniform doping is achieved through the rotation of the target and the sample substrate, the Fe doping amount is about 10-15 %, the laser energy is 320 mJ / pulse, and the cavity vacuum degree is 1×10 -6 mBar, the substrate temperature is 400-600 °C, the distance between the target and the substrate is 4-6 cm, annealed for 30-60 minutes after coating, and cooled to room temperature naturally. The iron-doped amorphous carbon (a-C:Fe) film was fabricated.

[0023] Then, a vacuum thermal evaporation method is used, that is, controlled by a mask, an aluminum (Al...

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Abstract

The invention discloses an aluminum / iron-doped amorphous carbon film / aluminum nano-thin-film memory resistor storage device and a manufacturing method thereof. According to the method, a quartz glass substrate serves as a substrate, an iron-doped amorphous carbon film is prepared through a pulsed laser deposition method, then two aluminum layers are evaporated on the amorphous carbon film through a vacuum hot evaporating method to serve as electrodes, a voltage trigger is connected, and the memory resistor storage device is prepared. Under room temperature, the memory resistor storage device is in a high resistance state or a low resistance state, the resistance switching phenomenon is extremely obvious, writing can be conducted through simple pulse voltage, and reading is achieved by detecting the resistance states. The aluminum / iron-doped amorphous carbon film / aluminum nano-thin-film memory resistor storage device has the advantages of being high in writing speed and repeatability, simple in structure, stable, resistant to vibration, concise in process, free of pollution to the environment, low in raw material price, easy to recycle and the like.

Description

technical field [0001] The invention relates to memory storage technology, in particular to an aluminum / iron doped amorphous carbon film / aluminum nano-film memory resistance storage device and a preparation method thereof. technical background [0002] Memory storage devices are physical media for information storage and reading. After integration, they can be made into unit devices such as memory, hard disk, and optical disk. According to different working principles, it can be divided into magnetic memory, electrical memory and so on. Among them, the magnetic memory uses ferromagnetic materials to spontaneously polarize atoms under an external magnetic field. When the external magnetic field is removed, the spontaneous polarization can continue to be maintained, so that the instantaneous external field changes are recorded as data signals. Electric memory uses ferroelectric materials to spontaneously polarize atoms under an external electric field, and records the insta...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 翟章印姜昱丞付浩
Owner HUAIYIN TEACHERS COLLEGE
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