Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Series pin structure α irradiation battery and preparation method thereof

A tandem battery technology, applied in the field of microelectronics, can solve the problems of low energy, low energy of β-rays, and limiting the output size of β-irradiated batteries, so as to prolong the service life, have good anti-radiation characteristics, and improve the energy collection rate Effect

Active Publication Date: 2017-01-11
XIDIAN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In addition, the energy of the β-ray itself is low, and the energy available to excite the irradiated carriers is also small, which also limits the output of the β-irradiated battery.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Series pin structure α irradiation battery and preparation method thereof
  • Series pin structure α irradiation battery and preparation method thereof
  • Series pin structure α irradiation battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Embodiment 1, preparation α radiation source is Am 241 , a tandem PIN structure α-irradiated cell with two trenches.

[0059] Step 1: Make the upper PIN knot.

[0060] refer to Figure 4 , the implementation of this step is as follows:

[0061] (1a) Clean the P-type highly doped SiC substrate to remove surface pollutants, such as Figure 4 As shown in (a):

[0062] (1a.1) Set the doping concentration to 1x10 18 cm -3 The P-type highly doped SiC substrate in NH 4 OH+H 2 o 2 Soak in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0063] (1a.2) After removing the surface organic residues, the P-type highly doped SiC substrate was treated with HCl+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0064] (1b) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) as shown:

[0065] An aluminum-doped P-type low-doped epi...

Embodiment 2

[0099] Embodiment 2, preparation α radiation source is Am 241 , a tandem PIN structure α-irradiated cell with 8 trenches.

[0100] Step 1: Make the upper PIN knot.

[0101] refer to Figure 4 , the implementation of this step is as follows:

[0102] 1) Clean the P-type highly doped SiC substrate to remove surface pollutants. The doping concentration of the P-type highly doped SiC substrate is 1×10 18 cm -3 ,Such as Figure 4 As shown in (a):

[0103] This step is the same as step (1a) of Embodiment 1.

[0104] 2) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) shown.

[0105] An aluminum-doped P-type doped epitaxial layer is epitaxially grown on the cleaned P-type highly doped SiC substrate by chemical vapor deposition CVD method. The process conditions are as follows: the epitaxy temperature is 1550°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, the impurity source is trimethylaluminum...

Embodiment 3

[0139] Embodiment 3, preparation α radiation source is Pu 238 , a tandem PIN structure α-irradiated cell with 12 grooves.

[0140] Step A: Make the upper PIN knot.

[0141] refer to Figure 4 , the implementation of this step is as follows:

[0142] A1) Clean the P-type highly doped SiC substrate to remove surface pollutants. The P-type highly doped SiC substrate has a doping concentration of 1×10 18 cm -3 ,Such as Figure 4 As shown in (a):

[0143] The implementation of this step is the same as the step (1a) of Embodiment 1.

[0144] A2) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) shown.

[0145] An aluminum-doped P-type low-doped epitaxial layer is epitaxially grown on the cleaned P-type highly-doped SiC substrate by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1550°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, the impurity sou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a series-connection PIN-structure alpha irradiation battery and a preparation method which mainly solve the problems that in the prior art, a manufactured SiC irradiation battery is low in energy conversation rate, and the output voltage of the manufactured SiC irradiation battery is limited. The series-connection PIN-structure alpha irradiation battery comprises an upper PIN junction and a lower PIN junction which are connected in series; the upper PIN junction comprises an N-type epitaxial layer ohmic contact electrode, an N-type heavily-doped epitaxial layer, a P-type lightly-doped epitaxial layer, a P-type heavily-doped SiC substrate and a P-type ohmic contact electrode; the lower PIN junction comprises an N-type ohmic contact electrode, an N-type heavily-doped SiC substrate, an N-type lightly-doped epitaxial layer, a P-type heavily-doped epitaxial layer and a P-type epitaxial layer ohmic contact electrode; each PIN junction comprises a plurality of grooves, the two PIN junctions make contact through the epitaxial layer ohmic contact electrodes, the upper grooves and the lower grooves are in mirror symmetry and communicated with each other, and an alpha irradiation source is placed in each groove. The series-connection PIN-structure alpha irradiation battery has the advantages that the utilization rate of nuclear raw materials and the energy collection rate are high, the output voltage of the battery is high, and the battery can supply power to a small circuit for a long time.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a structure of a semiconductor device and a preparation method thereof, in particular to a silicon carbide-based serial PIN type α irradiation battery and a preparation method thereof, which can be used to directly convert nuclear energy emitted by isotopes into electric energy , In micro-nano electromechanical systems and other tiny circuits and aerospace, desert, polar regions and other occasions that require long-term power supply and are unattended. [0002] technical background [0003] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more concerned. Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G21H1/06
Inventor 郭辉赵亚秋宋庆文王悦湖张玉明
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com