Substrate with transparent electrode and method for producing same
A technology of transparent electrode and manufacturing method, which is applied in cable/conductor manufacturing, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problem of difficulty in obtaining a low-resistance transparent electrode layer, simplify the crystallization process, and improve the response speed. , Design easy effects
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Embodiment 1
[0089] (Production of transparent film base material)
[0090] As a transparent film, a biaxially stretched PET film with a thickness of 188 μm (heat shrinkage rate 0.6 when heated at a heat shrinkage initiation temperature of 85° C. and 150° C. for 30 minutes) was used on both sides of which a hard coat layer made of a polyurethane resin was formed. %). Silicon oxide (SiO 2 ) to form a transparent dielectric layer with a film thickness of 40 nm.
[0091] (Film formation of amorphous transparent electrode layer)
[0092] Using indium oxide tin (tin oxide content 5% by weight) as a target, while introducing a mixed gas of oxygen and argon into the device, at an oxygen partial pressure of 5×10 -3 Pa, film chamber pressure 0.5Pa, substrate temperature 0°C, power density 4W / cm 2 sputtering under conditions. The film thickness of the obtained ITO layer was 25 nm.
[0093] In this substrate with a transparent electrode, the resistivity of the transparent electrode layer immedi...
Embodiment 2～5 and comparative example 1、2
[0097] In the above-mentioned Example 1, the target type (tin oxide content), oxygen partial pressure (introduced gas amount ratio) and crystallization conditions (temperature and time) were changed as shown in Table 1 when forming an amorphous transparent electrode layer. ), for film formation and crystallization.
[0098] Table 1 shows the conditions and measurement results of the above-mentioned examples and comparative examples together. In addition, the change over time of the resistivity at normal temperature and normal pressure immediately after the film formation of Example 1 and Comparative Example 1 is shown in figure 2 .
[0099]
[0100] When the transparent electrode layer is formed into a film, the oxygen partial pressure is increased to 1.2×10 -2 In Comparative Example 1 of Pa, the presence of local crystal grains (crystallinity figure 2 , it is considered that in Comparative Example 1, crystallization proceeds slowly at room temperature, and the resistiv...
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