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A kind of composite seed crystal template and method for HVPE growth Gan single crystal

A technology of seed crystal and template, which is applied in the direction of gaseous chemical plating, coating, electrical components, etc., can solve the problems that it is not easy to obtain a clean seed crystal window, affect the epitaxial growth of the window area, and easily deposit GaN on the mask, to achieve Improve the isolation effect, not easy to stick, improve the effect of GaN crystal quality

Active Publication Date: 2017-04-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are some problems when using the above mask materials alone to grow GaN crystals by HVPE, such as: using SiO 2 The surface of the mask is easy to deposit GaN, using SiN x It is not easy to obtain a clean seed window as a mask. It is difficult to form a regular pattern with TiN. Using metals such as Mo and W will affect the epitaxial growth of the window area.

Method used

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  • A kind of composite seed crystal template and method for HVPE growth Gan single crystal
  • A kind of composite seed crystal template and method for HVPE growth Gan single crystal

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Experimental program
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Effect test

Embodiment 1

[0040] (1) On a sapphire substrate with a thickness of 430um and a diameter of 2 inches, a 3um GaN seed crystal is grown on MOCVD as a seed crystal template;

[0041] (2) Deposit SiO with a thickness of 50 nm on the GaN / sapphire seed template using PECVD 2 Thin film, redeposited SiN with a thickness of 200nm x Thin films, deposited at 300°C;

[0042] (3) The composite mask made in step (2) is used to form the required pattern through processes such as gluing, alignment exposure, and development. The minimum line width of the pattern in the window area is 2 μm, and then use RIE to etch the composite mask. The etchant is SF 6 , the etching depth is 230nm;

[0043] (4) Use a buffered oxide etching solution to wet etch the composite mask to remove uncut SiO 2 Clean the patterned seed template after masking;

[0044] (5) Use 30% NaOH solution at a temperature of 80-90°C to remove the contaminated or damaged area on the surface of the GaN seed crystal, rinse with 0.5% HF soluti...

Embodiment 2

[0049] (1) On a sapphire substrate with a thickness of 430um and a diameter of 2 inches, a 3um GaN seed crystal is grown on MOCVD as a seed crystal template;

[0050] (2) Deposit SiO with a thickness of 100 nm on the GaN / sapphire seed template using PECVD 2 Thin film, redeposited SiN with a thickness of 400nm x Thin films, deposited at 300°C;

[0051] (3) On the composite mask, the required pattern is formed through processes such as glue coating, alignment exposure, and development, and RIE is used to etch the composite mask, and the etchant is CF 4 , the etching depth is 490nm;

[0052] (4) Use BOE solution to wet etch the composite mask to remove residual SiO in the window area 2 Mask and clean;

[0053] (5) Under normal temperature conditions, use 0.02M Na 2 S 2 o 8 Wash with a 0.02M NaOH mixed solution for 15 minutes under the irradiation of a 200W mercury lamp to remove the contaminated or damaged area on the surface of the GaN seed crystal, then rinse with 0.5% H...

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Abstract

The invention provides a composite seed crystal template and method for growing GaN single crystals through HVPE. The composite seed crystal template involves a composite mask structure and a composite mask window area etching technology. The composite seed crystal template and method for growing the GaN single crystals through HVPE are characterized in that the composite mask is formed by depositing two layers of materials, the external layer of the mask has an effect of guaranteeing the shape of a window and isolating a GaN epitaxial layer, and the internal layer of the mask has an effect of protecting GaN seed crystals; a dry-method technology and a wet-method technology are combined in the composite mask window area etching technology, the surface treatment on the GaN seed crystal layer is assisted in, etching accuracy can be guaranteed, and a clean seed crystal face for epitaxy can be obtained.

Description

technical field [0001] The invention relates to a composite mask seed crystal template and a manufacturing method for growing GaN single crystal by hydride vapor phase epitaxy (HVPE), in particular to the structure of the composite mask and the etching process of the window region of the composite mask, belonging to semiconductor technology field. Background technique [0002] The third-generation semiconductor material represented by GaN is one of the most important wide bandgap semiconductor materials. Their unique bandgap range, excellent optical and electrical properties and excellent material mechanical properties make them suitable for light-emitting devices from blue-green to ultraviolet bands, ultraviolet detectors, outer space and submarine communications, electronic devices and special conditions. Semiconductor devices and other fields have broad application prospects. [0003] The fabrication of GaN devices is restricted by epitaxial substrates. Usually, GaN-ba...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/04
CPCH01L21/0254H01L21/02598H01L21/02645
Inventor 王斌于广辉赵智德徐伟隋妍萍张燕辉
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI