Preparation method of boron-doped ultra/fine diamond monocrystal micropowder

A diamond single crystal, boron-doped technology, applied in the field of diamond manufacturing, can solve the problems of difficulty in single crystal purification, unsuitable for high-efficiency synthesis of boron-doped single crystal diamond powder, etc., to achieve improved crystal shape and surface quality, high impact resistance , The effect of simple process

Inactive Publication Date: 2014-11-26
SHANGHAI JIAO TONG UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the process of preparing diamond single crystal by this method, a large amount of catalyst impurities will inevitably be accompanied, which makes the single crystal purification very difficult

Method used

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  • Preparation method of boron-doped ultra/fine diamond monocrystal micropowder
  • Preparation method of boron-doped ultra/fine diamond monocrystal micropowder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The CVD high-grade super / fine diamond single-crystal micropowder with an average particle size of 1.8 μm is prepared on a mirror-polished single-crystal silicon wafer.

[0036] First, the surface of the silicon-based substrate was uniformly mechanically ground for 0.5 min with 0.5 μm diamond micropowder, and then the mechanically ground silicon-based substrate was ultrasonically cleaned in deionized water and acetone solution for 3 min.

[0037] Next, put the pretreated silicon-based substrate into the reaction chamber of the hot-wire CVD device for deposition. The hot-wire adopts a twisted-pair tantalum wire with a diameter of Φ0.4mm, and arranges the hot-wire in parallel on the silicon-based substrate. Above, and use high temperature resistant springs to keep the hot wire in a straight and horizontal state during the deposition process. After the reaction chamber is evacuated, the reaction gas (hydrogen and acetone) is introduced, wherein the acetone is brought into t...

Embodiment 2

[0041] The CVD high-grade super / fine diamond single-crystal micropowder with an average grain size of 2.4 μm is prepared on a mirror-polished single-crystal silicon wafer.

[0042] First, the silicon-based substrate surface was uniformly mechanically ground for 1 min with 2 μm diamond micropowder, and then the mechanically ground silicon-based substrate was ultrasonically cleaned in deionized water and acetone solution for 5 min.

[0043] Next, put the pretreated silicon-based substrate into the reaction chamber of the hot-wire CVD device for deposition. The hot-wire adopts a twisted-pair tantalum wire with a diameter of Φ0.4mm, and arranges the hot-wire in parallel on the silicon-based substrate. Above, and use high temperature resistant springs to keep the hot wire in a straight and horizontal state during the deposition process. After the reaction chamber is evacuated, the reaction gas (hydrogen and acetone) is introduced, wherein the acetone is brought into the reaction ch...

Embodiment 3

[0047] The CVD high-grade super / fine diamond single-crystal micropowder with an average grain size of 5.0 μm is prepared on a mirror-polished single-crystal silicon wafer.

[0048] First, the diamond micropowder with a particle size of 2.2 μm obtained by the mechanical crushing method was mixed into the photoresist solution. A good seed crystal photoresist solution is ultrasonically vibrated for more than 30 minutes to avoid the agglomeration of these ultrafine powders. Then, the mixed seed crystal photoresist solution is evenly spread on the surface of the silicon-based substrate (the substrate is a mirror-polished single crystal silicon wafer) under the action of high-speed centrifugation by using the plastic table, and the rotating speed of the plastic table is Set at 4000rpm, the duration is 30s. Then dry the silicon-based substrate after gluing.

[0049] Next, put the pretreated silicon-based substrate into the reaction chamber of the hot-wire CVD device for deposition....

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Abstract

The invention discloses a preparation method of boron-doped ultra/fine diamond monocrystal micropowder, which comprises the following steps: pretreating a silicon-base substrate to be used as a substrate material for growth of monocrystal micropowder; depositing the silicon-base substrate by hot filament chemical vapor deposition to obtain uniformly dispersed boron-doped diamond monocrystal particles, wherein a boron-containing compound is added into a reaction system of hydrogen and acetone used as reactant gases, the reaction pressure is 2-4.5 kPa, and the temperature of the silicon-base substrate is 700-950 DEG C; and carrying out a substrate removal technique, a mixed acid solution removal technique and a particle distillation technique to treat the boron-doped diamond monocrystal particles, thereby obtaining the boron-doped ultra/fine diamond monocrystal micropowder. A higher proportion of hexa-octahedron or icosahedron complex crystals in the ultra/fine diamond micropowder can obviously enhance the growth rate of the ultra/fine diamond monocrystal particles and improve the crystal form and quality of the particles.

Description

technical field [0001] The invention relates to the technical field of diamond manufacturing, in particular to a method for preparing boron-doped super / fine diamond single crystal micropowder. Background technique [0002] Diamond powder usually refers to diamond particles with a particle size between 0.1 μm and 54 μm, and those smaller than 5 μm are also called fine powder. Diamond micropowder is mainly used in the ultra-precision finishing of the surface of the workpiece - grinding and polishing processes. With the development of electronic technology, there is an increasing demand for polishing precision devices such as various optoelectronic crystals, computer hard disk substrates, optical components and semiconductor integrated circuit silicon wafers. In order to meet the processing requirements of these precision devices, the fine diamond powder The demand is increasing, and at the same time, higher requirements are put forward for the crystal shape, uniformity and me...

Claims

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Application Information

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IPC IPC(8): C30B25/00C30B29/04
Inventor 张韬孙方宏张文骅沈彬郭睿张志明郭松寿
Owner SHANGHAI JIAO TONG UNIV
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