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A kind of preparation method of tellurium-based composite thin film and its application in MIM capacitor

A technology of composite thin film and thin film capacitors, applied in the direction of thin film/thick film capacitors, multilayer capacitors, ion implantation plating, etc., can solve the problems of not having too high processing temperature, metal electrode oxidation, etc., to reduce production costs, avoid The effect of oxidation and simplified process

Active Publication Date: 2017-01-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when preparing devices on semiconductors such as GaAs or PCBs, it is often required not to have too high a processing temperature. In addition, the oxidation temperature of most metal electrodes is relatively low, such as Al (500 ° C), Cu (200 ° C), Au (400 ° C ), Mo (300°C), Ni (400°C), high heat treatment temperature will lead to oxidation of metal electrodes, so it is urgent to find a low-temperature treatment film material with good microwave dielectric properties

Method used

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  • A kind of preparation method of tellurium-based composite thin film and its application in MIM capacitor
  • A kind of preparation method of tellurium-based composite thin film and its application in MIM capacitor
  • A kind of preparation method of tellurium-based composite thin film and its application in MIM capacitor

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preparation example Construction

[0035] A preparation method for a tellurium-based composite thin film, comprising the following steps:

[0036] Step 1: Preparation of Zn by solid phase sintering method 2 Te 3 o 8 -TiTe 3 o 8 Composite ceramic target: ZnO 2 with TeO 2 Weighing and mixing according to the molar ratio of 2:3, ball milling for 24 hours and drying, TiO 2 with TeO 2 According to the molar ratio of 1:3, the materials were weighed and mixed, ball milled for 24 hours and dried, and the dried ZnO 2 -TeO 2 The powder is pre-calcined at 500°C to obtain Zn 2 Te 3 o 8 Powder, dried TiO 2 -TeO 2 The powder is calcined at 570°C to obtain TiTe 3 o 8 Powder; the Zn 2 Te 3 o 8 Powder and TiTe 3 o 8 The powder is weighed and mixed according to the mass ratio of 1:0.1~0.5, and ball milled for the second time. After drying, paraffin wax is added to granulate, and then placed in an oven for 30 minutes at 160°C~165°C, and cooled; the above dried powder Press into a disk with a diameter of 147mm...

Embodiment 1

[0046] A tellurium-based composite film, the tellurium-based composite film is Zn 2 Te 3 o 8 and TiTe 3 o 8 A film formed by compounding at a mass percentage of 100:30.

[0047] A kind of MIM thin-film capacitor, from bottom to top successively is lower electrode metal layer, capacitor insulating layer, upper electrode metal layer, it is characterized in that, described capacitor insulating layer is a tellurium-based composite film, and described tellurium-based composite film is Zn 2 Te 3 o 8 and TiTe 3 o 8 A film formed by compounding at a mass percentage of 100:30.

[0048] A preparation method for a tellurium-based composite thin film, comprising the following steps:

[0049] Step 1: Preparation of Zn by solid phase sintering method 2 Te 3 o 8 -TiTe 3 o 8 Composite ceramic target: ZnO 2 with TeO 2 Weighing and mixing according to the molar ratio of 2:3, ball milling for 24 hours and drying, TiO 2 with TeO 2 According to the molar ratio of 1:3, the materia...

Embodiment 2

[0058] A tellurium-based composite film, the tellurium-based composite film is Zn 2 Te 3 o 8 and TiTe 3 o 8 A film formed by compounding at a mass percentage of 100:30.

[0059] A kind of MIM thin-film capacitor, from bottom to top successively is lower electrode metal layer, capacitor insulating layer, upper electrode metal layer, it is characterized in that, described capacitor insulating layer is a tellurium-based composite film, and described tellurium-based composite film is Zn 2 Te 3 o 8 and TiTe 3 o 8 A film formed by compounding at a mass percentage of 100:30.

[0060] A preparation method for a tellurium-based composite thin film, comprising the following steps:

[0061] Step 1: Preparation of Zn by solid phase sintering method 2 Te 3 o 8 -TiTe 3 o 8 Composite ceramic target: ZnO 2 with TeO 2 Weighing and mixing according to the molar ratio of 2:3, ball milling for 24 hours and drying, TiO 2 with TeO 2 According to the molar ratio of 1:3, the materia...

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Abstract

The invention provides a tellurium-based composite film and its application in MIM capacitors. The tellurium-based composite film is a film formed by compounding Zn2Te3O8 and TiTe3O8 in a mass percentage ratio of 100:(10-50). The tellurium-based The composite film can also be applied to the capacitive insulating layer in MIM film capacitors. The tellurium-based composite thin film in the present invention can be annealed at a lower annealing temperature or without heat treatment to obtain a thin film capacitor with excellent performance, which can avoid the effects of high temperature annealing on the oxidation of metal electrodes, simplify the process, and reduce production costs. At the same time, it is compatible with MMIC (monolithic microwave integrated circuit) low-temperature process; the tellurium-based composite thin film obtained by the present invention can meet the performance requirements of the MIM capacitor material specified in the International Technology Roadmap for Semiconductors (ITRS).

Description

technical field [0001] The invention relates to a ceramic thin film and a preparation method thereof, in particular to a tellurium-based composite thin film and its application in MIM (metal-insulator-metal) capacitors. Background technique [0002] The rapid development and wide application of modern microwave communication technology (mobile communication, satellite communication, military radar, global satellite positioning system (GPS), Bluetooth technology, wireless local area network, etc.) has promoted the integration, miniaturization and high stability of communication equipment and low cost. Microwave dielectric ceramics is a new type of functional electronic ceramics developed rapidly over the past 30 years. It has the advantages of low loss, small frequency temperature coefficient, and high dielectric constant. However, microwave dielectric ceramics are limited by size and cannot meet the performance requirements of integrated and miniaturized electronic products...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/35C04B35/01C04B35/622H01G4/33
Inventor 张继华王磊魏猛陈宏伟杨传仁
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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