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A kind of synthesis method of superfine grain diamond single crystal

A diamond single crystal and ultra-fine particle technology, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of inability to obtain equal-volume particles, difficulty in meeting precision polishing, and disordered particle shapes, and achieve Improve the color and purity, promote a large number of nucleation, and improve the effect of uniform nucleation

Active Publication Date: 2016-08-24
HENAN POWER NEW MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a method requires a lot of manpower, material resources and time, and the crushed diamond, despite proper shaping, still cannot obtain a satisfactory number of equal-volume particles, the shape of the particles is messy, and the cost is high, which is difficult to meet the precision polishing requirements

Method used

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  • A kind of synthesis method of superfine grain diamond single crystal
  • A kind of synthesis method of superfine grain diamond single crystal
  • A kind of synthesis method of superfine grain diamond single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The synthetic method of superfine particle diamond single crystal of the present invention, detailed steps are as follows:

[0032] a. Mixing of graphite powder and catalyst powder: take graphite powder (spherical graphite with an impurity content less than 20ppm, the particle size of graphite powder is 600-1000 mesh) and catalyst powder according to the weight ratio of 4:6 and mix them;

[0033] Graphite powder is baked in the oven for 5 hours before use, and the baking temperature is 200°C;

[0034] The catalyst powder is a Ni-based alloy catalyst powder with a fineness of 600-1000 mesh; expressed in weight percentage, the Ni-based alloy catalyst powder is made of the following raw materials according to conventional methods: Fe 25%, Co 5%, Ce 2%, Mn 5%, SiC 1%, Mo 1%, the balance is Ni;

[0035] b. Place the mixed raw material obtained in step a in a three-dimensional mixer for 6 hours, perform isostatic pressing at 230 MPa, and then granulate after the treatment to...

Embodiment 2

[0044] The synthetic method of superfine particle diamond single crystal of the present invention, detailed steps are as follows:

[0045] a. Mixing of graphite powder and catalyst powder: take graphite powder (spherical graphite with an impurity content less than 20ppm, the particle size of graphite powder is 600-1000 mesh) and catalyst powder in a weight ratio of 5:5 and mix them;

[0046] Graphite powder is baked in an oven for 6 hours before use, and the baking temperature is 200°C;

[0047] The catalyst powder is a Ni-based alloy catalyst powder with a fineness of 600-1000 mesh; expressed in weight percentage, the Ni-based alloy catalyst powder is made of the following raw materials according to conventional methods: Fe 20%, Co 3%, Ce0.5%, Mn3%, SiC 0.5%, Mo0.5%, the balance is Ni;

[0048] b. Place the mixed raw material obtained in step a in a three-dimensional mixer for 5 hours, perform isostatic pressing at 240 MPa, and then granulate after the treatment to form a sp...

Embodiment 3

[0057] The synthetic method of superfine particle diamond single crystal of the present invention, detailed steps are as follows:

[0058] a. Mixing of graphite powder and catalyst powder: take graphite powder (spherical graphite with an impurity content less than 20ppm, the particle size of graphite powder is 600-1000 mesh) and catalyst powder according to the weight ratio of 4:6 and mix them;

[0059] Graphite powder is baked in the oven for 4 hours before use, and the baking temperature is 200°C;

[0060] The catalyst powder is a Ni-based alloy catalyst powder with a fineness of 600-1000 mesh; expressed in weight percentage, the Ni-based alloy catalyst powder is made of the following raw materials according to conventional methods: Fe 22%, Co 4%, Ce 1.2%, Mn4%, SiC 0.75%, Mo0.75%, the balance is Ni;

[0061] b. Place the mixed raw material obtained in step a in a three-dimensional mixer for mixing for 6 hours, perform isostatic pressing at 260 MPa, and then granulate after...

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Abstract

The invention discloses a method for synthesizing ultrafine diamond single crystals, which includes mixing raw graphite powder and catalyst powder, mixing the mixed raw materials in a three-dimensional mixer, isostatic pressing, granulating after treatment, and mixing the particles The material is loaded into the mold, pressed into a columnar core column by a four-column press, the formed core column is placed in a vacuum furnace for processing, the processed core column is placed in a diamond synthesis block, and the synthesis block is placed in a six-sided top press machine under high temperature and high pressure Synthesize ultrafine diamond single crystal products. The catalyst powder used in the present invention is Ni-based alloy catalyst powder. The present invention can be used to prepare superfine diamond single crystals, the synthesized 400-mesh diamond content is more than 90%, and the crystal form integrity rate is more than 85%. It effectively solves the difficulty in synthesizing ultrafine diamonds in the prior art Insufficient; the diamond crystal form is complete, the purity is high, and the thermal shock value reaches 80-87%.

Description

technical field [0001] The invention relates to the technical field of diamond synthesis, in particular to a method for synthesizing ultrafine diamond single crystals. Background technique [0002] As today's superhard fine abrasive, diamond single crystal is widely used in technical fields and departments such as machinery, electronics, aerospace, optical instruments, petroleum, and military industry. At present, with the development of cutting-edge technology and high-end manufacturing industry, the surface finish of many precision devices is very high, such as computer disks, magnetic heads, optical communication devices, optical crystals, semiconductor substrates and other devices, all require precise polishing. , if there are any bumps, scratches or foreign matter attached to the surface beyond the allowable range, the accuracy and performance of the design will not be guaranteed. Ultra-fine diamond single crystal, especially 400-mesh fine diamond as the abrasive for u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B1/12C30B29/04C22C19/03
Inventor 张存升邵增明
Owner HENAN POWER NEW MATERIAL
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