The invention belongs to the technical field of cyanide-free copper plating technology, and particularly relates to a preparation method of an HEDP copper-plated non-porous thin layer. The preparation method comprises the steps that abrasive paper is used for polishing to remove floating rust at first, then, chemical degreasing and activation are carried out, and finally deionized water is used for cleaning; a plating solution is prepared; plating is carried out, particularly, an electrolysis copper plate is used as an anode, an oxidation film on the surface of the copper plate is removed, activation treatment is carried out for 5-10 s through a 10%-20% dilute hydrochloric acid solution, a base plate which is treated is used as a cathode to be placed in the plating solution, the temperature is 50-65 DEG C, the pH value is 9-11, direct current plating is carried out, the current density is 0.5-3.5 A/dm<2>, plating is carried out under the cathode moving condition, the moving speed is 3 cm/s-5 cm/s, and the HEDP copper-plated non-porous thin layer is obtained. The HEDP alkaline plating solution is low in toxicity, environmentally friendly and quite low in corrosion to production equipment, the leveling ability, dispersing ability and deep plating ability of the HEDP alkaline plating solution can reach or even exceed those of a cyanide copper plating solution, the cathode current efficiency reaches up to 95% or above, and the plating solution is stable in performance.