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Silicon-cerium polishing liquid and preparation method thereof

A polishing liquid, silicon-cerium technology, applied to polishing compositions containing abrasives, etc., can solve the problems of polishing efficiency and polishing effect to be improved, and the particle size distribution of cerium oxide is wide, and achieves easy operation, high cutting rate and polishing efficiency. high effect

Active Publication Date: 2015-01-28
包头中科雨航抛光材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

US5543216A discloses a preparation method for synthesizing cerium oxide particles. The particle size of the cerium oxide is between 0.03 and 5um. However, the particle size distribution of the cerium oxide is relatively wide, and the polishing efficiency and polishing effect still need to be improved.

Method used

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  • Silicon-cerium polishing liquid and preparation method thereof
  • Silicon-cerium polishing liquid and preparation method thereof
  • Silicon-cerium polishing liquid and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0035] This embodiment relates to the surface treatment of nano-scale ceria powder, which comprises the following steps

[0036](1) Add a modifier whose mass is 10wt% of nano-sized ceria powder into deionized water, and stir for 15 minutes at a stirring speed of 800~1000 rpm to form the first system with a concentration of 2.0wt%;

[0037] (2) Disperse the nano-sized ceria powder and acryloyloxyethyltrimethylammonium chloride with a mass of 8wt% of the nano-sized ceria powder in a The second system is obtained in the glycidyl methacrylate; the quality of the glycidyl methacrylate is 3.0 times the quality of the nano-sized cerium dioxide powder;

[0038] (3) Add the second system obtained in step (2) to the first system obtained in step (1), stir at a stirring speed of 1800~2000 rpm for 25 min to obtain a mixed solution, and transfer it to the reactor, N 2 Under the protection of the atmosphere, add dilauroyl peroxide with 0.5wt% glycidyl methacrylate mass under continuous st...

Embodiment 2

[0042] The silicon cerium polishing solution described in the present embodiment contains 3.0wt% micron-sized ceria powder, 1.20wt% nano-sized ceria powder, 15wt% colloidal silicon dioxide, and 0.5wt% alkyl Phenyl ether sulfosuccinate, 0.8 wt% AM / AMPS binary copolymer, and the balance water. Its preparation method is as follows: firstly add colloidal silicon dioxide into the container, then add alkylphenol ether sulfosuccinate and stir evenly to obtain the first system; then add micron-sized ceria powder to the first system respectively Body and nano-scale ceria powder and stirred evenly to obtain the second system; finally, AM / AMPS binary copolymer was added to the second system, and the rest of water was added to disperse evenly by ultrasonic waves to obtain a silicon cerium polishing solution.

Embodiment 3

[0044] The silicon cerium polishing solution described in this embodiment contains 6.0wt% micron-sized ceria powder, 1.75wt% nano-sized ceria powder, 20wt% colloidal silicon dioxide, and 0.8wt% alkyl Phenyl ether sulfosuccinate, 1.5 wt% AM / AMPS binary copolymer, and the balance water. Its preparation method is as follows: firstly add colloidal silicon dioxide into the container, then add alkylphenol ether sulfosuccinate and stir evenly to obtain the first system; then add micron-sized ceria powder to the first system respectively Body and nano-scale ceria powder and stirred evenly to obtain the second system; finally, AM / AMPS binary copolymer was added to the second system, and the rest of water was added to disperse evenly by ultrasonic waves to obtain a silicon cerium polishing solution.

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Abstract

The invention relates to a silicon-cerium polishing liquid which comprises micron order cerium dioxide powder, nanoscale cerium dioxide powder, colloidal silicon dioxide, succinic acid ester or succinate, a negative ion dispersant and the balance of water, wherein the grain size of the micron order cerium dioxide powder is 0.5-2.0 microns, the micron order cerium dioxide powder with the gain size of less than 1.5 microns accounts for over 60% and the micron order cerium dioxide powder with the grain size of less than 1.8 microns accounts for below 5%; the grain size of the nanoscale cerium dioxide powder is 20-100nm, the nanoscale cerium dioxide powder with the gain size of less than 50nm accounts for 30-35% and the nanoscale cerium dioxide powder with the gain size of greater than 80nm accounts for 10-15%. The silicon-cerium polishing liquid provided by the invention can be used for a high-precision grinding and polishing process of glass, sapphires, resin lenses and semiconductor substrates and has the advantages of being high in polishing efficiency, high in polishing precision and high in cutting rate.

Description

technical field [0001] The invention relates to the technical field of surface polishing treatment, more specifically, the invention relates to a silicon cerium polishing solution and a preparation method thereof. Background technique [0002] Chemical Mechanical Polishing (CMP) is a technique for planarization by the chemical and mechanical action of a polishing fluid, which can be used to planarize surfaces including glass, glasses or semiconductor wafers. The polishing liquid used to planarize or polish the surface of the substrate is a well-known technology in the art. Generally speaking, the polishing liquid includes abrasives in an aqueous solution. Abrasives known in the prior art include cerium oxide, silicon oxide, aluminum oxide, zirconium oxide, and tin oxide. The polishing liquid including rare earth polishing powder has the advantages of high polishing speed and high precision. Since the invention of rare earth polishing powder in the 1940s, the production vol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 张海龙张磊王红艳
Owner 包头中科雨航抛光材料有限公司
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