Non-selective wet etching solution for III-V semiconductor materials as well as preparation method and application of non-selective wet etching solution

Abstract

The invention discloses a non-selective wet etching solution for III-V semiconductor materials as well as a preparation method and application of the non-selective wet etching solution. The etching solution comprises the following components in percentage by weight: 4%-8% of potassium dichromate, 18%-51% of concentrated hydrochloric acid, 36%-66% of phosphoric acid and 8-9% of deionized water. By the etching solution, the non-selective wet etching of polybasic compounds such as elemental, binary, ternary and quaternary compounds combined by GaAs system, InP system and III-V family can be achieved and meanwhile, the non-selective wet etching for metal materials such as a Ge substrate and Au / Ag / AuGeNi can also be achieved. The formula of the etching solution is not affected by virtue of the epitaxial doping concentration. By the etching solution, only one photoetching protection procedure is needed to complete the etching process, the etching deviation can be controlled within + / - 4%, the wet-etching process is superior to other dry-etching process and is simple, stable, feasible and low in material cost and is suitable for industrial production and laboratory use.

Description

technical field [0001] The invention relates to a chemical etching solution used in the technical field of semiconductors, in particular to a non-selective wet etching solution for III-V semiconductor materials, a preparation method and application thereof. Background technique [0002] With the development of modern industry, the global energy crisis and air pollution problems have become increasingly prominent. As an ideal renewable energy source, more and more countries have paid attention to solar energy. Carrying out solar cell research and developing the photovoltaic power generation industry will contribute to the sustainable development of national energy. is of great significance. The main problems faced by solar cells are low photoelectric conversion efficiency and low cost performance, which cannot meet the needs of large-scale civilian use. At present, the conversion efficiency of commercial monocrystalline silicon cells is about 16%-20%, and the conversion effi...

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Problems solved by technology

[0008] 1) The first method often has a good corrosion effect when corroding GaAs-based materials on the surface layer, but if the GaAs layer is located in the middle transition layer of the epitaxial material, the side erosion of each layer of material becomes uncontrollable, and the corrosion profile becomes uneven. Qi, so that the side wall protection can not be realized, thereby increasing the parallel resistance of the solar cell chip, affecting the final electrical parameters;

[0009] 2) The second method has an excellent corrosion effect for the single-layer InP system, but for the corrosion of the InP material in the trench, a large number of uncorroded colors will be produced, the main reason is that HCl-H 2 o 2 The system itself is an unstable system, as the solution standing time increases, the H 2 o 2 will volatilize O 2 , so that the solute concentration is reduced, and the reaction is extremely uncontrollable;

[0010] 3) Since the third method involves multi-step photolithography protection, as the number of epitaxial layers increases, it poses a huge challenge to the material cost of photoresist. Therefore, it is not suitable for industrial production and is mostly used in laboratory research.

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