Non-selective wet etching solution for III-V semiconductor materials as well as preparation method and application of non-selective wet etching solution
A non-selective, wet etching technology, applied in the direction of chemical instruments and methods, surface etching compositions, etc., can solve the problems of affecting electrical parameters, uneven corrosion profiles, unsuitable for industrial production, etc., and achieve material cost The effect of low cost and simple process
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[0029] Example 1
[0030] The Ⅲ-Ⅴ non-selective wet etching solution for semiconductor materials of the present invention has a weight percentage of 4%-8% potassium dichromate, 18%-51% concentrated hydrochloric acid, and 36%-66% phosphoric acid. , 8%-9% deionized water, through the etching solution can be realized by the GaAs system, InP system, III-V group composed of elementary, binary, ternary, quaternary and other non-representative multi-component materials Selective wet etching can also realize non-selective wet etching of Ge substrates, Au / Ag / AuGeNi and other metal materials. The etching formula is not affected by the concentration of epitaxial doping. A typical triple junction GaAs solar cell structure such as figure 1 Shown.
[0031] In the following, we take single-junction and triple-junction GaAs solar cells as corrosion objects to illustrate the present invention in detail. The specific conditions are as follows:
[0032] 1. Preliminary preparation for corrosion
[0033...
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[0050] Example 2
[0051] Similarly, single-junction and triple-junction GaAs solar cells are used as corrosion targets. The specific conditions are as follows:
[0052] 1. Preliminary preparation for corrosion
[0053] 1.1) Use acetone and HCl solution to remove organic and inorganic contamination on the surface of single junction and triple junction GaAs solar cell epitaxial wafers;
[0054] 1.2) The above-mentioned epitaxial wafers are flushed in the quick-discharge flushing tank to remove the cleaning residues until the water resistance reaches 10MΩ or more;
[0055] 1.3) Spin the washed epitaxial wafer in a spin dryer to remove residual water stains;
[0056] 1.4) The cleaned epitaxial wafers are sequentially subjected to yellow light homogenization, photolithography, development, baking and other processes, and photoresist is used to form a mesa pattern on the surface of the epitaxial layer to be etched;
[0057] 1.5) Coating a layer of photoresist on the back of the epitaxial wafer...
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