High-power sub-hundred picosecond pulse laser system

Abstract

The invention provides a high-power sub-hundred picosecon pulse laser system, comprising a first semiconductor sensor, a laser collimating and focusing lens system, a dichroscope, a composite crystal, an optical fiber coupling lens, an optical fiber, a second semiconductor laser, a beam combiner, a ytterbium-doped active optical fiber and an output isolator; the composite crystal is composed of a non-transparent window, a YVO4-dopted crystal, a Nd3+ and YVO4 crystal, a semiconductor saturable-absorber, a copper heat sink layer and various coating film layers. The micron-sized thin Nd3+ and YVO4 crystal is used as a laser crystal and the output of sub-hundred picosecon pulse seed light is realized by using the passively Q-switched laser of the semiconductor saturable-absorber; in addition, the pulse seed light is amplified by utilizing an optical fiber amplification technology and the output of the sub-hundred picosecon pulse light with high average power and high peak-value power is obtained. The laser system has narrow pulse width, compact structure and high output power and can be widely applied to the fields such as precision processing, biological fluorescence detection and laser ranging.

Description

technical field [0001] The invention relates to the field of fiber laser technology, in particular, the invention relates to a high-power sub-hundred picosecond pulse laser system. Background technique [0002] With the development and progress of fiber optic technology, all-fiber lasers relying on fiber fusion splicing technology have the advantages of small size, good heat dissipation, high electro-optical conversion efficiency, and good output beam quality, making fiber lasers have a tendency to surpass solid-state and gas lasers. , Has been widely used in precision machining, cutting and welding and other fields. In particular, narrow pulse width pulse fiber laser has its unique advantages in the fields of metal and non-metal marking, film etching, anodized aluminum surface blackening, silicon wafer precision processing, and ITO film removal. [0003] With the improvement of industrial processing precision, the traditional Q-switched pulse laser with nanosecond pulse wi...

AI Technical Summary

Problems solved by technology

Due to the limitation of the semiconductor laser seed source, only hundreds of picoseconds to nanoseconds of pulsed light can usually be obtained.

The second is to use mode-locking technology to periodically change the gain and loss of the laser in the laser resonator. Common dye mode-locking, automatic mode-locking, Cr 4+ : YAG crystal passive mode-locking, Kerr lens mode-locking, etc. In order to obtain narrow pulse laser output, a folded resonator is usually used to shorten the total length of the system, and the system is relatively complicated

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