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Asymmetric double-layer graphene and preparing method and application thereof

A double-layer graphene, asymmetric technology, applied in the direction of graphene, nanotechnology for materials and surface science, electrical components, etc., can solve problems such as difficulty in regulating the energy band of double-layer graphene, complex field effect transistor process, etc. , to achieve the effect of easy operation, simple preparation method and simple process

Inactive Publication Date: 2015-03-25
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the above-mentioned problems such as the difficulty in regulating the energy band of bilayer graphene and the complex process of preparing field effect transistors with it, the present invention utilizes a chemical vapor deposition (CVD) method to prepare a kind of asymmetric bilayer graphene by doping

Method used

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  • Asymmetric double-layer graphene and preparing method and application thereof
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  • Asymmetric double-layer graphene and preparing method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] (1) Using copper foil with a purity of 99.8% purchased from Alfa Aesar (China) Chemical Co., Ltd. as a catalyst, the copper foil was first cleaned, and then the copper foil was polished using electrochemical polishing technology.

[0050] (2) Put the copper foil into the CVD equipment, feed 7sccm hydrogen gas, then raise the temperature to 1000°C within 30 minutes, and keep it at 1000°C for 10 minutes, and use a vacuum pump to keep a vacuum of 10Pa in the CVD chamber, such as figure 2 As shown, the metal catalyst 5 is placed on the sample holder 4 and placed in the quartz tube 3 in the CVD equipment.

[0051] (3) 190 sccm of hydrogen, 0.2 sccm of methane, and 0.2 sccm of ammonia are introduced. Keep at 1000° C. for 30 minutes to grow nitrogen-doped graphene. At the same time, since the purity of the copper catalyst is 99.8%, when the graphene nucleates, the double-layer graphene will be grown while the single-layer graphene is growing.

[0052] (4) On the basis of st...

Embodiment 2

[0055] (1) Using copper foil with a purity of 99.999% purchased from Alfa Aesar (China) Chemical Co., Ltd. as a catalyst, the copper foil was first cleaned, and then the copper foil was polished using electrochemical polishing technology.

[0056] (2) Put the copper foil into the CVD equipment, feed 7sccm hydrogen gas, then raise the temperature to 1000°C within 30 minutes, and keep it at 1000°C for 10 minutes, and use a vacuum pump to keep a vacuum of 10Pa in the CVD chamber.

[0057] (3) 190 sccm of hydrogen, 0.2 sccm of methane, and 0.2 sccm of ammonia are introduced. Maintaining at 1000° C. for 30 minutes to grow nitrogen-doped graphene, and at the same time, because the purity of the copper catalyst is 99.999%, the grown graphene is single-layer graphene.

[0058] (4) is similar to step (4) in Example 1, but the difference is that this step can be covered with a piece of copper foil on the basis of step (3), and at high temperature, the metal can still play a catalytic ef...

Embodiment 3

[0061] (1) is the same as step (1) in Example 1.

[0062] (2) Except that the flow rate of hydrogen is 10 sccm, the temperature is raised to 1100° C. and kept for 10 minutes, other processes are the same as step (2) in Example 1.

[0063] (3) Except hydrogen 300sccm, acetonitrile 50sccm, 1100 ℃ of conditions kept for 10 minutes, other processes were the same as step (3) in Example 1.

[0064] (4) Except that 300 sccm of hydrogen, 50 sccm of ethane, and 50 sccm of trialkylborane were kept at 1100° C. for 10 minutes, other processes were the same as step (4) in Example 1.

[0065] (5) is the same as step (5) in embodiment (1).

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Abstract

The invention relates to asymmetric double-layer graphene and a preparing method and application of the asymmetric double-layer graphene. Different chemical elements are doped in two single layers of the double-layer graphene. The preparing method comprises the steps that (1) a metal catalyst is pretreated, and high-temperature annealing is conducted; (2) the reaction temperature in the step (1) is maintained, hydrogen is injected until the gas flow becomes stable, carbon-source gas and ammonia gas or other gas including carbon and nitrogen are injected to serve as a carbon source and a nitrogen source, the state is maintained for 10-120 min, and nitrogen-doped graphene is obtained; (3) after the nitrogen-doped graphene is obtained, carbon source gas and diborane or gas including carbon and boron are injected to serve as a carbon source and a boron source, the state is maintained for 10-120 min, and the asymmetric double-layer graphene is obtained and then is transferred on a target substrate. According to the asymmetric double-layer graphene and the preparing method and application of the asymmetric double-layer graphene, the asymmetric double-layer graphene is prepared through doping through a chemical vapor deposition method, a grid electrode can be omitted in a field effect transistor prepared through the graphene, and thus the structure and the processing technology of the transistor are made to be simpler.

Description

technical field [0001] The invention belongs to the field of nanomaterial preparation, and in particular relates to an asymmetric double-layer graphene and its preparation method and application. Background technique [0002] Graphene is a carbon atom with sp 2 Hybrid orbitals make up planar thin-film materials of a two-dimensional hexagonal honeycomb lattice. Since it was invented by Andre Geim and Konstantin Novoselov of the University of Manchester in 2004, it has attracted widespread attention from scientists around the world. They were also nominated for the "Nobel Prize in Physics" in 2008 for their contributions, and finally won the "Nobel Prize in Physics" in 2010. The invention of graphene not only reflects a major breakthrough in theory, but also has such advantages as: the highest electron mobility and maximum carrying current density among all materials, bipolar field effect, and can realize continuous from N-type to P-type Modulation, fractional quantum Hall ...

Claims

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Application Information

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IPC IPC(8): H01L29/167C01B31/04B82Y30/00
CPCB82Y30/00C01B32/186H01L29/167
Inventor 郭北斗宫建茹
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA