Method for preparing hydrogen-containing zinc aluminum oxide transparent conducting film by using metal alloy target

Abstract

The invention relates to a method for preparing a hydrogen-containing zinc aluminum oxide transparent conducting film by using a metal alloy target. The method adopts a magnetron sputtering process: the target is a zinc-aluminum alloy in which the weight percent of aluminum is 2%, the substrate is common soda glass, argon and water vapor are used as a sputtering atmosphere, the water vapor is also used as a reactant gas, a sealed water tank is used as a water vapor source, and a needle valve and a thermostatic apparatus are utilized to control the flow rate of the water vapor. The method comprises the following steps: vacuumizing the background of a sputtering vacuum cavity to 8.0*10<-4>Pa, regulating a sample stage to room temperature to 250 DEG C, opening the needle valve on a water storage tank pipeline, and introducing water vapor into the vacuum cavity; regulating the water vapor pressure to 5*10<-3>-5.0*10<-2>Pa by using the needle valve, introducing argon into the vacuum cavity, and regulating the vacuum degree of the vacuum cavity to 0.2-1Pa by using a mass flowmeter; starting sputtering, and regulating the sputtering power to 50-100W; and after the glow becomes stable, removing the baffle, and depositing a zinc aluminum oxide film for 20-40 minutes; and after the temperature of the sample stage is lower than 100 DEG C, opening the vacuum cavity, and taking out the zinc aluminum oxide sample.

Description

technical field [0001] The invention relates to a method for preparing a zinc oxide-based transparent conductive film. Background technique [0002] Zinc oxide can be prepared into a transparent conductive film by element doping, such as Al, Sc, Ga, etc. Due to its low raw material price and performance close to that of ITO film, it can replace ITO film and is widely used in solar cells, such as silicon-based solar cells, cadmium telluride thin film batteries and copper indium gallium selenide thin film batteries and other fields. Due to the poor process stability of the zinc oxide-based transparent conductive film, the uniformity of the film performance and the poor consistency of batch quality when prepared in a large area, it cannot be applied to solar cells on a large scale at present. The preparation of large-area, batch-quality stable ZnO-based transparent conductive films is the focus of this material research. [0003] The industrial preparation methods of zinc oxi...

AI Technical Summary

Problems solved by technology

[0004] At present, the zinc-aluminum oxide transparent conductive film is prepared by doping oxygen in the sputtering gas, but the zinc-aluminum oxide transparent conductive film is very sensitive to the amount of oxygen doped, and excessive oxygen will cause serious degradation of the electrical properties of the film

Especially for the alloy target to prepare the film, it is usually necessary to feed a large amount of oxygen to provide the oxygen atoms needed for film growth, but this is easy to oxidize the surface of the target, thereby affecting the sputtering efficiency, and the process control is difficult

Studies have found that hydrogen entering the zinc-aluminum oxide film can improve its electrical properties. Hydrogen doping can be achieved by injecting hydrogen gas during the sputtering process, but only hydrogen entering the film in an atomic state can improve its electrical properties. The injected hydrogen is in the form of molecules Compared with atomic hydrogen, the activity is low, so the amount of inflow is relatively large, and part of the hydrogen enters the film in the form of molecules, which reduces the transmittance of the film.

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