Oxydol etching solution for copper-molybdenum alloy films

A technology of copper-molybdenum alloy film and etching solution, which is applied in the field of etching solution, can solve the problems of high risk for operators and client equipment, difficulty in controlling the etching angle and etching time, unfriendly environment of fluoride, etc., and achieve the etching cone angle Suitable, easy to control the reaction, and small CD loss

Active Publication Date: 2015-04-08
SHENZHEN CAPCHEM TECH
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Problems solved by technology

The disadvantages of the etchant adding fluoride are: first, fluoride is extremely unfriendly to the environment; second, it has strong corrosion ability, and it is often diff

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  • Oxydol etching solution for copper-molybdenum alloy films
  • Oxydol etching solution for copper-molybdenum alloy films
  • Oxydol etching solution for copper-molybdenum alloy films

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[0021] Example

[0022] The etching solution of this example is composed of hydrogen peroxide, inorganic acid, hydrogen peroxide stabilizer, metal chelating agent, etching additive, surfactant, defoamer and deionized water. In this example, the inorganic acid is sulfuric acid; the hydrogen peroxide stabilizer is polyacrylamide; the metal chelating agent is glycolic acid; the etching additive is composed of nitrogen-containing heterocyclic compounds and salts, specifically, the nitrogen-containing heterocyclic compound is imidazole , The salt uses sodium alginate; the surfactant uses the commercially available OT surfactant; the defoamer uses the commercially available NP-5, namely nonylphenol polyoxyethylene 5 ether. In this example, the dosage of the above components was tested and four comparative tests were set up. See Table 1 for details. The percentages in Table 1 are weight percentages, that is, the percentage of the component in the total weight of the etching solution, an...

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Abstract

The invention discloses an oxydol etching solution for copper-molybdenum alloy films. The etching solution is free of fluorides, and comprises the following main components in percentage by weight: 1-35% of hydrogen peroxide, 0.05-5% of inorganic acid, 0.1-5% of hydrogen peroxide stabilizer, 0.1-5% of metal chelator, 0.1-5% of etching additive, 0.1-5% of surfactant, 0.1-5% of defoaming agent and the balance of deionized water. The etching solution has the advantages of no environment pollution, mild and controllable reaction, proper cone angle after etching, small CD loss, favorable defoaming property and higher overall performance, and lays foundation for high-precision processing.

Description

technical field [0001] The present application relates to the field of etching solution, in particular to an etching solution for a hydrogen peroxide-based copper-molybdenum alloy film. Background technique [0002] Etching is a technology that removes materials using chemical reaction or physical impact; etching technology is divided into wet etching and dry etching. Among them, wet etching uses chemical reagents to achieve the purpose of etching through chemical reactions. [0003] In recent years, while people's demand for liquid crystal displays has been increasing, higher requirements have been put forward for product quality and screen accuracy, and the effect of etching can directly lead to the quality of the circuit board manufacturing process, affecting the quality of high-density thin wires. Image precision and quality. Aluminum or aluminum alloys have been used for the metal wiring of conventional liquid crystal display devices. However, with the increase in siz...

Claims

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Application Information

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IPC IPC(8): C23F1/18
Inventor 康威陈昊鄢艳华
Owner SHENZHEN CAPCHEM TECH
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