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Encapsulation structure and encapsulation method of organic light emitting diode device

An electroluminescent device and packaging structure technology, applied in the direction of electro-solid devices, electrical components, semiconductor devices, etc., can solve the problems of loss of desiccant absorption capacity, decreased device life, easy to generate cracks, etc., to achieve good step coverage and The effect of large area thickness uniformity, small influence and strong adhesion

Inactive Publication Date: 2015-04-15
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the desiccant in the device absorbs a large amount of oxygen and water vapor, the desiccant loses its absorption capacity in a short period of time, resulting in the gradual accumulation of oxygen and water vapor in the device, which significantly reduces the life of the device; the glass cover usually used Or the metal cover plate is a brittle material, which is prone to cracks, and the device will appear very thick after packaging, which is not suitable for flexible devices

Method used

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  • Encapsulation structure and encapsulation method of organic light emitting diode device
  • Encapsulation structure and encapsulation method of organic light emitting diode device
  • Encapsulation structure and encapsulation method of organic light emitting diode device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] figure 1 It is a schematic diagram of the packaging structure of the organic electroluminescent device in Example 1; as figure 1 As shown, the packaging structure of the organic electroluminescent device includes an ITO glass substrate 11, an organic light-emitting functional layer 12, a cathode 13, and a thin film encapsulation layer 20; the thin film encapsulation layer 20 includes five germanium carbide film layers 21 and an inorganic barrier layer 22 package units.

[0059] A method for encapsulating an organic electroluminescent device, comprising the steps of:

[0060] (1) Pre-treatment of ITO glass substrate (11): First, clean the ITO glass with acetone, ethanol, deionized water, and ethanol in sequence, all of which are cleaned with an ultrasonic cleaner. dry, oven dry stand-by; then carry out surface activation treatment to the cleaned ITO glass, to increase the oxygen content of the conductive surface layer, improve the work function of the conductive layer ...

Embodiment 2

[0076] A method for encapsulating an organic electroluminescent device, comprising the steps of:

[0077] (1), (2), (3) are the same as embodiment 1;

[0078] (4) Preparation of thin film encapsulation layer:

[0079] a) Preparation of germanium oxycarbide film layer: Plasma-enhanced chemical vapor deposition (PECVD) was used to prepare a germanium oxycarbide film layer on the cathode surface, the working pressure was 80Pa, the deposition temperature was 60°C, and the radio frequency power was 1W / cm 2 ; The gas source adopted in the process of depositing germanium oxycarbide layer is tetramethylgermane (TMG) and dinitrogen monoxide (N 2 O), the loading gas is argon (Ar); the flow of tetramethylgermane (TMG) is 25sccm, nitrous oxide (N 2 O), the flow of argon (Ar) mixed gas is 50sccm, nitrous oxide (N 2 O) and nitrous oxide (N 2 O), the ratio R of argon (Ar) mixed gas flow is 60%; The thickness of germanium oxycarbide film layer is 280nm;

[0080] b) Preparation of inorgan...

Embodiment 3

[0085] A method for encapsulating an organic electroluminescent device, comprising the steps of:

[0086] (1), (2), (3) are the same as embodiment 1;

[0087] (4) Preparation of thin film encapsulation layer:

[0088] a) Preparation of germanium oxycarbide film layer: the germanium oxycarbide film layer was prepared on the cathode surface by plasma enhanced chemical vapor deposition (PECVD), the working pressure was 10Pa, the deposition temperature was 30°C, and the radio frequency power was 0.1W / cm 2 ; The gas source adopted in the process of depositing germanium oxycarbide layer is tetraethoxygermane (TEOG) and nitrous oxide (N 2 O), the loading gas is argon (Ar); the flow of tetraethoxygermane (TEOG) is 20sccm, nitrous oxide (N 2 O), the flow of argon (Ar) mixed gas is 20sccm, nitrous oxide (N 2 O) and nitrous oxide (N 2 O), the ratio R of argon (Ar) mixed gas flow rate is 40%; The thickness of germanium oxycarbide film layer is 250nm;

[0089] b) Preparation of inorga...

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Abstract

The invention discloses an encapsulation structure of an organic light emitting diode device. The encapsulation structure includes an anode electric conduction substrate as well as an organic light-emitting functional layer, a cathode and a thin film encapsulation layer which are sequentially stacked on the anode electric conduction substrate, wherein the thin film encapsulation layer includes germanium oxycarbide film layers and inorganic barrier layers which are sequentially stacked on the cathode, wherein the germanium oxycarbide film layers are made of a germanium oxycarbide compound, and the inorganic barrier layers are made of B2O3:Cl, Al2O3:Cl, Ga2O3:Cl, In2O3:Cl or Tl2O3:Cl. The thin film encapsulation layer in the encapsulation structure of the invention has very high density, and therefore, with the thin film encapsulation layer adopted, erosion of organic compounds and electrodes in the organic light emitting diode device which is caused by matters such as oxygen and water vapor can be effectively reduced, and therefore, the service life of the device, especially a flexible device can be prolonged, the service life of the device can reach more than 13900 hours (T70@1000cd / m<2>). The invention also provides an encapsulation method of an organic light emitting diode device.

Description

technical field [0001] The invention relates to the technical field of organic electroluminescent devices, in particular to a packaging structure and a packaging method for organic electroluminescent devices. Background technique [0002] Currently, organic electroluminescent devices (OLEDs) suffer from a short lifetime, which is mainly caused by the intrusion of oxygen and water vapor. On the one hand, oxygen is a quencher, which will significantly reduce the quantum efficiency of luminescence. At the same time, oxygen will oxidize the luminescent layer, and the carbonyl compound produced is also an effective quencher; on the other hand, the influence of water vapor is more obvious, it The main way of destruction is to make the organic compound in the device hydrolyze, and also react with the metal cathode, which greatly reduces its stability, resulting in device failure and reduced service life. Therefore, in order to effectively suppress the degradation and failure of or...

Claims

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Application Information

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IPC IPC(8): H01L51/52H01L51/54H01L51/56
CPCH10K50/846H10K50/8445H10K50/844H10K71/00
Inventor 周明杰钟铁涛王平张振华
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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