Unlock instant, AI-driven research and patent intelligence for your innovation.

A method of irradiation synthesis of zinc sulfide (zns) coated silicon carbide nanowhisker composites

A technology for coating silicon carbide and nano-whiskers is applied in the field of irradiation synthesis to achieve the effects of good safety, short reaction time and environmental protection

Inactive Publication Date: 2016-05-18
临沭县东升磨料有限公司
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, for the selection of the carrier, the present invention uses silicon carbide nano whiskers with better conductivity and stability than carbon nanotubes, which has not been reported at present

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1), first in deionized water, add the block surfactant P123, place it in an ultrasonic stirrer for 30 minutes, and the solution is uniform and uniform, supporting a colorless transparent liquid, wherein the concentration of P123 is 5% ( v / v); then add reduced vitamin C (Vc), the concentration is 5% (wt%), and Vc needs to be prepared and used now;

[0022] (2), adding the silicon carbide nano-whiskers through surface cleaning into the solution obtained in step 1, ultrasonically dispersed for 20 minutes; the content of silicon carbide whiskers in the resulting mixture is 50%; the cleaning process is to Silicon nano whiskers were soaked in hydrochloric acid for 4 hours, and then washed with deionized water until the pH was 7;

[0023] (3), the arginine of concentration 10% is added in the mixture that step 2 obtains; The amount of the added arginine makes the pH value of solution 10, then adds a certain amount of zinc chloride and sulfur in mixed solution successively So...

Embodiment 2

[0026] (1), first in deionized water, add the block surfactant P123, place it in an ultrasonic stirrer for 10 minutes of ultrasound, the solution is even and uniform, supporting a colorless transparent liquid, wherein the concentration of P123 is 5% ( v / v); then add reduced vitamin C (Vc), the concentration is 2% (wt%), and Vc needs to be prepared and used now;

[0027] (2), adding the silicon carbide nano-whiskers through surface cleaning into the solution obtained in step 1, ultrasonically dispersed for 20 minutes; the content of silicon carbide whiskers in the resulting mixture is 30%; the cleaning process is to Silicon nano whiskers were soaked in hydrochloric acid for 2 hours, and then washed with deionized water until the pH was 7;

[0028] (3), the arginine of concentration 10% is added in the mixture that step 2 obtains; The amount of the added arginine makes the pH value of solution be 8, subsequently adds a certain amount of zinc chloride and sulfur in mixed solution...

Embodiment 3

[0031] (1), first in deionized water, add the block surfactant P123, place it in an ultrasonic stirrer and ultrasonically for 15 minutes, the solution is even and uniform, supporting a colorless transparent liquid, wherein the concentration of P123 is 8% ( v / v); then add reduced vitamin C (Vc), the concentration is 4% (wt%), and Vc needs to be prepared and used now;

[0032] (2), adding the silicon carbide nano-whiskers through surface cleaning into the solution obtained in step 1, ultrasonically dispersed for 15 minutes; the content of silicon carbide whiskers in the resulting mixture is 25%; the cleaning process is to Silicon nano whiskers were soaked in hydrochloric acid for 3 hours, and then washed with deionized water until the pH was 7;

[0033] (3), the arginine of concentration 10% is added in the mixture that step 2 obtains; The amount of the added arginine makes the pH value of solution be 9, subsequently adds a certain amount of zinc chloride and sulfur in mixed sol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an irradiation synthetic method for a silicon carbide nano-crystal whisker composite material coated with zinc sulfide (ZnS). The method comprises the following process and steps: (1) adding a block surfactant P123 into deionized water, placing the obtained mixture in an ultrasonic-wave stirrer, and carrying out ultrasonic treatment for 10 to 30 minutes; (2) adding surface-cleaned silicon carbide nano-crystal whisker into the solution obtained in the step (1), and carrying out ultrasonic dispersion for 10 to 20 minutes; (3) adding arginine with a concentration of 10% into the mixture obtained in the step (2), and successively adding a certain amount of zinc chloride and sodium thiosulfate into the obtained mixed solution; and (5) sealing the reaction container filled with the mixed solution obtained in the step (3), carrying out irradiation treatment, washing irradiated products with ethanol, carrying out cleaning with distilled water, subjecting the cleaned products to centrifuging in a high-speed centrifuge a plurality of times so as to remove unreacted ions and surfactant, and finally carrying out vacuum drying so as to obtain silicon carbide nano-crystal whisker composite nanomaterial coated with ZnS.

Description

technical field [0001] The invention relates to an irradiation synthesis method of a zinc sulfide (ZnS)-coated silicon carbide nano-whisker composite material. Background technique [0002] Silicon carbide nanowhiskers have become one of the research hotspots worldwide due to their unique structure and peculiar physical and chemical properties. It has high electrical conductivity, mechanical strength and extremely stable structure at high temperature, and has good application prospects in industry; in the past, the bottleneck of the application of silicon carbide whiskers was mainly the complicated preparation method and very high production cost, but , with the progress of this year's research, the production of silicon carbide whiskers has increased significantly, and the cost has also decreased significantly. On the basis of the gradual improvement of the chemical modification and characterization methods of silicon carbide nano whiskers, people try to connect metal or s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/08C01B31/36B82Y30/00
CPCC01B32/956C01G9/08C01P2004/16C01P2004/64
Inventor 华文蔚
Owner 临沭县东升磨料有限公司