Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pb<2+> ion-doped high temperature phase barium metaborate crystal and growing method and use thereof

A technology based on barium metaborate and ions, applied in the field of artificial crystal growth, can solve the problems of low light-to-light conversion efficiency, achieve good comprehensive performance, large birefringence, and lower threshold

Inactive Publication Date: 2015-04-22
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, compared to crystals with large Raman scattering cross-sections, under the same conditions, α-BaB 2 o 4 The light-to-light conversion efficiency of the crystal is also low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pb&lt;2+&gt; ion-doped high temperature phase barium metaborate crystal and growing method and use thereof
  • Pb&lt;2+&gt; ion-doped high temperature phase barium metaborate crystal and growing method and use thereof
  • Pb&lt;2+&gt; ion-doped high temperature phase barium metaborate crystal and growing method and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Embodiment 1: Growth of Pb by Kyropoulos method 0.02 Ba 0.98 B 2 o 4 the crystal

[0021] Weigh analytically pure BaCO according to the stoichiometric ratio 3 , Pb 3 o 4 and H 3 BO 3 , and an excess of 2.5 mol% H 3 BO 3 . Put them into a corundum crucible after fully grinding and mixing them, put them into a muffle furnace, raise the temperature to 400°C and keep it warm for 12 hours, so that the H 3 BO 3 break down. The intermediate product obtained by the primary sintering is ground again, mixed evenly, placed in a corundum crucible, placed in a muffle furnace, heated to 1000°C and kept for 24 hours, naturally cooled to room temperature and taken out to obtain Pb 0.02 Ba 0.98 B 2 o 4 Crystal growth raw material. Its reaction equation is:

[0022] 2H 3 BO 3 =B 2 o 3 +3H 2 O↑

[0023] 0.02Pb 3 o 4 +2.94BaCO 3 +6H 3 BO 3 = 3Pb 0.02 Ba 0.98 B 2 o 4 +2.94CO 2 ↑+0.01O 2 ↑+9H 2 O↑

[0024] Put the obtained polycrystalline growth raw mater...

Embodiment 2

[0025] Example 2: Pb 0.02 Ba 0.98 B 2 o 4 Transmission Spectrum, Optical Damage Threshold, Birefringence and Raman Spectrum of Crystal

[0026] With the Pb obtained in Example 1 0.02 Ba 0.98 B 2 o 4 The single crystal was processed into a 5×5×1mm thin slice, and its UV-visible-infrared transmission spectrum was measured with a VARIAN CARY-5E spectrophotometer. The results showed that: Pb 0.02 Ba 0.98 B 2 o 4 The UV cut-off edge of the crystal is up to 200nm, and the infrared cut-off edge is at 2900nm.

[0027] With the Pb obtained in Example 1 0.02 Ba 0.98 B 2 o 4 Crystal, with a power density of 1GW / cm 2 , Nd:YAG laser irradiation with a pulse width of 10 ns and a repetition rate of 1 Hz, no damage occurred on the inside and surface of the crystal, indicating that Pb 0.02 Ba 0.98 B 2 o 4 The laser damage threshold of the crystal is not lower than 1GW / cm 2 .

[0028] The crystal obtained in embodiment 1 is processed into a prism and carried out a refractiv...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Laser damage thresholdaaaaaaaaaa
Login to View More

Abstract

The invention discloses a Pb<2+> ion-doped high temperature phase barium metaborate crystal and a growing method and use thereof. The chemical formula of the crystal is PbxBa(1-x)B2O4, wherein x is the proportion that Pb<2+> ions replace Ba<2+> ions, and the value range is that x is greater than or equal to 0.005 but less than or equal to 0.05. The crystal can be grown by melt processes such as a pulling method, a kyropoulos method and a Bridgman method. The growing raw material of the crystal is PbxBa(1-x)B2O4 or PbxBa(1-x)B2O4 with excessive B2O3 not exceeding 10mol%. The crystal is stable in physical and chemical properties, good in machinability, wide in transparency range, great in photo damage threshold value and great in birefringence and the frequency in a stimulated Raman scattering (SRS) active vibration mode is about 635cm<->. The crystal can be used for preparing beam splitting polarizing components such as a Glan prism, a Wollaston prism, a Semarmont prism, a Rochon prism and the like as well as phase delay and optical compensating apparatuses; and the crystal can be used as an SRS crystal for converting frequency of laser in ultraviolet-visible-near-infrared bands.

Description

technical field [0001] The present invention relates to doped Pb 2+ Ionic high-temperature phase barium metaborate (α-BaB 2 o 4 ) crystal and its growth method and application, which belong to the field of artificial crystal growth technology and the field of laser technology. Background technique [0002] High temperature phase barium metaborate (α-BaB 2 o 4 ) crystal is a multifunctional optical material. It belongs to the trigonal crystal system, the unit cell parameters a=b=0.7235nm, c=3.9192nm, the space group is R-3c, and it is a negative uniaxial crystal. α-BaB 2 o 4 The crystal has good chemical stability, suitable hardness (Mohs hardness 4.5), wide light transmission band (from 189nm to 3500nm), large birefringence (Δn=0.14 at 532nm wavelength), high optical damage threshold (not less than 1.0 GW / cm 2 ), is currently the only birefringent crystal that has been applied in the ultraviolet band (Zhou Guoqing, Xu Jun, Chen Xingda, Chen Wei, Li Hongjun, Xu Ke, G...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/22C30B15/00C30B17/00C30B11/00G02B1/00
Inventor 万松明冯德玄唐小路张波
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products