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A metal-doped SIC-based rotating target and its manufacturing method

A rotating target and metal technology, applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of flexible control, increase target cost, increase production steps, etc., and achieve compact structure, The effect of good conductivity and uniform composition

Active Publication Date: 2017-12-29
江苏海泰光电材料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on the current technical conditions, the preparation methods of rotating targets mainly include: hot isostatic pressing, hot pressing sintering and casting. The above processes have their own advantages and disadvantages, but it is difficult to meet the flexible control of different sizes, especially hot pressing The method can only produce a single target with a length of less than 300mm, so it can only achieve a certain length requirement by multi-section and segmental Bonding on the liner, which increases the production steps and increases the cost of target production

Method used

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  • A metal-doped SIC-based rotating target and its manufacturing method
  • A metal-doped SIC-based rotating target and its manufacturing method
  • A metal-doped SIC-based rotating target and its manufacturing method

Examples

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preparation example Construction

[0026] see figure 1 , a method for preparing a metal-doped SiC-based rotating target provided by an embodiment of the present invention includes the following process steps:

[0027] Preparation of metal-doped SiC spray powder: SiC powder with a mass percentage of 80-99.5 wt%, a purity of not less than 99.95 wt%, and a particle size of 1-5um and a mass percentage of 0.5-20 wt%, a purity of not less than 99.5% doped metal powder with a particle size below -400 mesh, after mechanical mixing, sintering in a hydrogen atmosphere at 1700-1950°C for 6-10 hours, and then ball milling to obtain a spray powder of 100-400 mesh, in which the doped metal can be One or more of Ti, Al, Cr, Ni, Cu, Ag, Sn and Zn.

[0028] Spraying substrate treatment: Use cleaning and mechanical grinding to remove oil stains and oxide layers on the surface of the sprayed substrate, and then use sandblasting to make the surface of the sprayed substrate reach a certain roughness to increase the bonding strengt...

Embodiment 1

[0038] An aluminum-nickel-doped SiC-based rotating target with a thickness of 7 mm was sprayed on a stainless steel tube with an outer diameter of 150 mm and a length of 1850 mm.

[0039] SiC powder with a mass percentage of 80 wt%, a purity of not less than 99.95 wt%, and a particle size of about 5um and a mass percentage of 20 wt%, a purity of not less than 99.5 wt%, aluminum powder and nickel powder with a particle size of -450 mesh, after After mechanical mixing, sintering with hydrogen at 1700° C. for 6 hours, and then ball milling the sintered powder to obtain 120-225 mesh aluminum-nickel-doped SiC-based spray powder.

[0040] Use absolute ethanol to remove oil stains on the surface, and sandblast to make the surface of the substrate reach a certain roughness.

[0041]The 0.1mm nickel-chromium coating was sprayed by plasma spraying method, and the spraying parameters are shown in Table 3.

[0042] Table 3 Plasma Spraying Nickel-Chromium Primer Parameters

[0043] ...

Embodiment 2

[0049] A titanium-doped SiC-based rotating target with a thickness of 4 mm was sprayed on a stainless steel tube with an outer diameter of 133 mm and a length of 1550 mm.

[0050] Mix SiC powder with a mass percentage of 90 wt%, a purity of not less than 99.95 wt%, and a particle size of about 2um with a mass percentage of 10 wt%, a purity of not less than 99.5 wt%, and a particle size of -550 mesh titanium powder, after mechanical mixing Sintering at 1750° C. with hydrogen for 8 hours, and then crushing the sintered powder by ball milling to obtain 140-325 mesh titanium-doped SiC-based spray powder.

[0051] Use absolute ethanol to remove oil stains on the surface, and sandblast to make the surface of the substrate reach a certain roughness.

[0052] A 0.2mm nickel-chromium-aluminum-yttrium coating was sprayed by plasma spraying method, and the specific spraying parameters are shown in Table 5.

[0053] Table 5 Plasma spraying nickel chromium aluminum yttrium primer paramete...

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Abstract

The invention provides a SiC-based rotating target material of doped metals. The target material comprises the components in percent by mass: 80-99.5 percent of SiC and 0.5-20 percent of doped metals, wherein the doped metals comprise one or more of Ti, Al, Cr, Ni, Cu, Ag, Sn and Zn. The invention also provides a preparation method of the SiC-based rotating target material of the doped metals, which comprises the following steps: preparing SiC spraying powder of the doped metals; performing treatment on a spraying substrate; spraying a priming layer; spraying an SiC-based coating of the doped metals on the spraying substrate by using a plasma spraying process. According to the SiC-based rotating target material of the doped metals and the preparation method of the target material, the SiC-based rotating target material of the doped metals has a compact structure, and is uniform in components, high in conductivity and free of cracks; the spraying length and diameters are not limited, and the relative density of the target material can reach 90-95 percent.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a metal-doped SiC-based rotating target and a preparation method thereof. Background technique [0002] In the glass coating process, the metal or metal alloy target is sputtered with ionized process gas argon ions by magnetron sputtering process. During this process, the sputtered particles are combined with the reactive gas oxygen or Nitrogen reacts to form dielectric compounds (oxides or nitrides) with low absorption, stability, and a certain refractive index. As a result, the composition of the produced dielectric film is affected by the atmosphere, and the physical properties are not very stable, which is finally characterized by various properties of the product, and the refractive index of the film layer will also change to a certain extent; at the same time, the oxidation reaction produces a large amount of Heat, which seriously affects the sputtering effici...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C4/10C23C4/134C23C14/34C23C4/06
CPCC23C4/10
Inventor 不公告发明人
Owner 江苏海泰光电材料科技股份有限公司