Selective Growth Method and Structure of Group III Nitride Epitaxial Thin Films on Silicon Substrate
A technology of epitaxial thin film and selective growth, which is applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve the problems of unfavorable industrial production, complicated preparation process, high cost, etc., and achieve improved crystal quality, simple process, and accurate shape controllable effect
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Embodiment 1
[0042] In this embodiment, the composite substrate includes a silicon substrate with a crystal orientation and an AlN nucleation layer grown on it, and three layers of carbon nanotube films are laid on the composite substrate as a carbon nanotube mask to prepare GaN epitaxial thin films.
[0043] The method for selective growth of a GaN epitaxial thin film on a silicon substrate in this embodiment includes the following steps:
[0044] 1) Substrate 1 uses MOCVD technology to grow AlN nucleation layer 12 on silicon substrate 11 with crystal orientation to form a composite substrate:
[0045] a) In the MOCVD reaction chamber, under a hydrogen atmosphere, the pressure is 150 Torr, and the temperature is raised to 1100 ° C for 10 minutes to perform in-situ cleaning treatment;
[0046] b) In a hydrogen atmosphere, the pressure rises to 75Torr, the temperature drops to 1000°C, and trimethylaluminum TMAl is introduced as the aluminum source for 15s, and multiple aluminum atomic la...
Embodiment 2
[0057] In this embodiment, the composite substrate includes a silicon substrate with a crystal orientation and an AlN nucleation layer grown thereon, and two layers of carbon nanotube films are laid on the composite substrate as a carbon nanotube mask, and This process was repeated twice during the growth of GaN epitaxial film, so that the three-layer carbon nanotube mask and GaN epitaxial film were arranged alternately in the growth direction, forming a periodic mask, and high-quality GaN epitaxial film was prepared.
[0058] The method for selectively growing a group III nitride epitaxial film on a silicon substrate in this embodiment comprises the following steps:
[0059] 1) The substrate 1 grows an AlN nucleation layer 12 on a silicon substrate 11 with a crystal orientation by using MOCVD technology to form a composite substrate, and the specific parameters are the same as step 1) of the first embodiment.
[0060] 2) laying a carbon nanotube mask 2 on the substrate 1: ...
Embodiment 3
[0073] In this embodiment, the substrate adopts a silicon substrate with a crystal orientation, and a single-layer carbon nanotube film is laid on the substrate as a carbon nanotube mask, and the process is repeated twice during the growth process of the GaN epitaxial film. During the process, the three-layer carbon nanotube mask and the GaN epitaxial film are arranged alternately in the growth direction to form a periodic mask and prepare a high-quality GaN epitaxial film.
[0074] The method for selectively growing a group III nitride epitaxial film on a silicon substrate in this embodiment comprises the following steps:
[0075] 1) The substrate 1 is a silicon substrate with a crystal orientation;
[0076] 2) Lay the first layer of carbon nanotube mask 2 on the oriented silicon substrate:
[0077] On the growth substrate of the carbon nanotube array, a layer of neatly arranged and uniformly sized nanoscale iron powder is deposited by electron beam evaporation as a catal...
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Abstract
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