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Synthesis method of zirconium diboride crystal

A zirconium diboride and synthesis method technology, applied in the direction of boron/boride, metal boride, etc., can solve the problems of difficult synthesis of zirconium diboride crystals, difficulty in obtaining large-sized crystals, etc., and achieve low impurity content and high purity , The effect of simple process

Inactive Publication Date: 2015-06-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the technical problem that the present zirconium diboride crystals are difficult to synthesize and obtain large-sized crystals, thereby providing a method for synthesizing zirconium diboride crystals

Method used

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  • Synthesis method of zirconium diboride crystal
  • Synthesis method of zirconium diboride crystal
  • Synthesis method of zirconium diboride crystal

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specific Embodiment approach 1

[0018] Specific embodiment one: the synthesis method of a kind of zirconium diboride crystal of the present embodiment is carried out according to the following steps:

[0019] 1. Using boron powder and zirconium powder as raw materials and aluminum as the medium, mix boron powder, zirconium powder and aluminum powder evenly according to the ratio of B:Zr:Al=2:1:2~50 to obtain a uniformly mixed powder ;

[0020] 2. Put the uniformly mixed powder in step 1 in an alumina ceramic crucible, then raise the temperature to 700°C-2200°C in a vacuum or inert gas protection atmosphere, and then keep it warm for 1h-1000h;

[0021] 3. Take out the reacted crucible, and dissolve the molten aluminum in the crucible with alkali solution or acid solution to obtain zirconium diboride crystals.

[0022] The present invention comprises following beneficial effect:

[0023] 1. The present invention adopts B powder and Zr powder as raw materials, and obtains ZrB through the reaction of B and Zr ...

specific Embodiment approach 2

[0028] Specific embodiment two: the difference between this embodiment and specific embodiment one is that in step one, boron powder and zirconium powder are used as reaction raw materials, and aluminum is used as a medium, and boron powder, zirconium powder and aluminum powder are mixed according to B:Zr:Al = 2:1:2~50 mixed evenly to obtain a uniformly mixed powder. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0029] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the inert gas in step two is Ar gas or N 2 . Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a synthesis method of a zirconium diboride crystal, relates to a synthesis method of a metal boride crystal, and aims to solve the technical problems of difficulty in synthesis of the zirconium diboride crystal and difficulty in obtaining of large-sized crystals at present. The method comprises the following steps: I, uniformly mixing boron powder, zirconium powder and aluminum powder to obtain uniformly mixed powder; II, placing the uniformly mixed powder in the step I in an aluminum oxide ceramic crucible, and then heating to react under vacuum or in an inertia gas protective atmosphere; III, taking the reacted crucible out, dissolving the molten aluminum in the crucible by using alkaline solution or acid solution to obtain the zirconium diboride crystal. The method has the advantages of easily available raw materials, simple process and capability of obtaining the ZrB2 crystals of different sizes by adjusting the thermal insulation time. The method is applied to the field of preparation of the metal boride crystal.

Description

technical field [0001] The invention relates to a method for synthesizing metal boride crystals. Background technique [0002] Zirconium diboride (ZrB 2 ) materials have excellent properties such as high melting point (3220°C), high hardness, high stability, good electrical conductivity, thermal conductivity and good corrosion resistance to molten metal and slag, making zirconium boride materials in the field of machinery and electronics industries It has broad application prospects. Recent studies have shown that single crystal ZrB 2 Due to the small lattice mismatch, it is suitable as a substrate material for heteroepitaxial growth of III-nitride (such as AlN, GaN, etc.) thin films. ZrB 2 and Al 0.26 Ga 0.74 N enables complete in-plane lattice matching. ZrB 2 The coefficient of thermal expansion is 5.9 x 10 -6 K -1 , which is very close to the thermal expansion coefficient of GaN, so in ZrB 2 The thermal stress generated by growing GaN on the substrate will be v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B35/04
CPCC01B35/04C01P2004/03
Inventor 张幸红韩文波王鹏赵广东程业红刘大钊李勇霞
Owner HARBIN INST OF TECH
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